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BAS16LT1

Rectifier Diode,

器件类别:分立半导体    二极管   

厂商名称:Shandong Yiguang Electronic Joint Stock Co Ltd

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器件参数
参数名称
属性值
厂商名称
Shandong Yiguang Electronic Joint Stock Co Ltd
Reach Compliance Code
unknown
ECCN代码
EAR99
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SEMICONDUCTOR
Shandong Yiguang Electronic Joint stock Co., Ltd
BAS16LT1
SURFACE MOUNT SWITCHING DIODE
TECHNICAL DATA
*
*
Ultra Fast Switching Speed
Surface Mount Package Ideally Suited For
Automatic Insertion
Package:
SOT-23
*
High Conductance
ABSOLUTE MAXIMUM RATINGS at Ta=25℃
Characteristic
Non-Repetitive Peak Reverse Voltage
Peak Repetitive Reverse Voltage
working Peak Reverse Voltage DC
Blocking Voltage
RMS Reverse Voltage
Peak Forward Surge Current
Peak Forward Current
Symbol
V
RM
V
RRM
V
RWM
V
R
V
R(RMS)
I
FM
I
F
(Note)
P
D
Rating
100
Unit
V
75
V
53
500
200
350
2.8
V
mA
mA
mW
mW/℃
Power
Dissipation
Derate Above 25℃
Junction Temperature
Storage Temperature
Tj
Tstg
150
-50-150
Note:Diode Ceramic Substrate 10mmⅹ8.0mmⅹ0.7mm
ELECTRICAL CHARACTERISTICS at Ta=25℃
Characteristic
Symbol
Min
Max
715
Maximum Forward Voltage
V
FM
855
1.0
1.25
1.0
Maximum Peak Reverse Current
I
RM
50
30
Capacitance
Reverse Recovery Time
Cj
Trr
2.0
6.0
Unit
mV
mV
V
V
uA
uA
uA
PF
nS
Test Conditions
I
F
=1.0mA
I
F
=10mA
I
F
=50mA
I
F
=150mA
V
R
=75V
V
R
=75V Tj=150℃
V
R
=25V Tj=150℃
V
R
=0 f=1.0MHz
I
F
=10mA to I
RR
=1.0mA
V
R
=6.0V R
L
=100Ω
Note:Diode On Ceramic Substrate 10mmⅹ8.0mmⅹ0.7mm
DEVICE MARKING:
BAS16=A6
SEMICONDUCTOR
Shandong Yiguang Electronic Joint stock Co., Ltd
BAS16LT1
SURFACE MOUNT SWITCHING DIODE
TECHNICAL DATA
BAS16LT1
+10 V
820
2.0 k
0.1µF
t
r
t
p
10%
t
I
F
t
rr
t
100
µH
I
F
0.1
µF
50
OUTPUT
PULSE
GENERATOR
D.U.T.
50
INPUT
SAMPLING
OSCILLOSCOPE
90%
V
R
INPUT SIGNAL
I
R
i
R(REC)
= 1.0 mA
OUTPUT PULSE
(I
F
= I
R
= 10 mA; MEASURED
at i
R(REC)
= 1.0 mA)
Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (I
F
) of 10 mA.
Notes:
2. Input pulse is adjusted so I
R(peak)
is equal to 10 mA.
Notes:
3. t
p
» t
rr
Figure 1. Recovery Time Equivalent Test Circuit
100
10
I
F
, FORWARD CURRENT (mA)
T
A
= 150°C
T
A
= 85°C
10
I
R
, REVERSE CURRENT (µA)
1.0
T
A
= 125°C
T
A
= – 40°C
0.1
T
A
= 85°C
T
A
= 55°C
1.0
T
A
= 25°C
0.01
0.1
0.2
0.4
0.6
0.8
1.0
1.2
T
A
= 25°C
0.001
0
10
20
30
40
50
V
F
, FORWARD VOLTAGE (VOLTS)
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 2. Forward Voltage
Figure 3. Leakage Current
0.68
C
D
, DIODE CAPACITANCE (pF)
0.64
0.60
0.56
0.52
0
2
4
6
8
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 4. Capacitance
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