首页 > 器件类别 > 二极管 > 整流二极管

BAS21C

Rectifier Diode, 2 Element, 0.225A, 250V V(RRM), Silicon, PLASTIC PACKAGE-3

器件类别:二极管    整流二极管   

厂商名称:FORMOSA

厂商官网:http://www.formosams.com/

下载文档
BAS21C 在线购买

供应商:

器件:BAS21C

价格:-

最低购买:-

库存:点击查看

点击购买

器件参数
参数名称
属性值
厂商名称
FORMOSA
包装说明
PLASTIC PACKAGE-3
Reach Compliance Code
unknown
ECCN代码
EAR99
Is Samacsys
N
配置
COMMON CATHODE, 2 ELEMENTS
二极管元件材料
SILICON
二极管类型
RECTIFIER DIODE
JESD-30 代码
R-PDSO-G3
元件数量
2
端子数量
3
最高工作温度
150 °C
最低工作温度
-55 °C
最大输出电流
0.225 A
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
最大功率耗散
0.225 W
最大重复峰值反向电压
250 V
最大反向恢复时间
0.05 µs
表面贴装
YES
端子形式
GULL WING
端子位置
DUAL
Base Number Matches
1
文档预览
SMD Switching Diode
BAS21/BAS21C/BAS21S
List
Formosa MS
List................................................................................................. 1
Package outline............................................................................... 2
Features.......................................................................................... 2
Mechanical data............................................................................... 2
Maximum ratings ............................................................................. 2~3
Rating and characteristic curves........................................................ 4
Pinning information........................................................................... 5
Marking........................................................................................... 5
Suggested solder pad layout............................................................. 5
Packing information.......................................................................... 6
Reel packing.................................................................................... 7
Suggested thermal profiles for soldering processes............................. 7
High reliability test capabilities........................................................... 8
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Document ID
Issued Date
2009/08/10
Revised Date
2012/04/12
Revision
C
Page.
8
Page 1
DS-221930
SMD Switching Diode
BAS21/BAS21C/BAS21S
225mW Surface Mount
Switching Diode- 250V
Package outline
Formosa MS
SOT-23
0.045 (1.15)
0.034 (0.85)
0.020 (0.50)
(C)
0.012 (0.30)
0.007 (0.18)
0.003 (0.09)
Features
Fast Switching Speed
Surface Mount Package Ideally Suited for Automatic Insertion
High Conductance
Lead-free parts meet RoHS requirments
Suffix "-H" indicates Halogen-free part, ex.BAS21C-H.
0.120 (3.04)
0.110 (2.80)
.084(2.10)
.068(1.70)
(B)
(A)
0.063 (1.60)
0.047 (1.20)
0.108 (2.75)
0.083 (2.10)
0.027 (0.67)
0.013 (0.32)
Mechanical data
0.051 (1.30)
0.035 (0.89)
Epoxy:UL94-V0 rated flame retardant
Case : Molded plastic, SOT-23
Terminals : Solder plated, solderable per
MIL-STD-750, Method 2026
Dimensions in inches and (millimeters)
Mounting Position : Any
Weight : Approximated 0.008 gram
Maximum ratings
(AT T =25 C unless otherwise noted)
o
A
PARAMETER
Continuous Reverse Voltage
Forward Current
Peak Forward Surge Current @ t=1.0s
SYMBOL
BAS21
BAS21C
250
BAS21S
UNIT
V
V
R
I
F
I
FM
200
225
625
mA
mA
Thermal Characteristics
PARAMETER
Total Device Dissipation FR-5
Board* , T
A
= 25 C
Derate Above 25 C
Thermal Resistance Junction to Ambient
Total Device Dissipation Alumina
Substrate* , T
A
= 25 C
Derate Above 25 C
Thermal Resistance Junction to Ambient
Operating Temperature Range
Storage Temperature Range
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
O
2
O
O
1
O
SYMBOL
MAX.
225
1.8
UNIT
mW
mW/
O
C
O
P
D
R
θJA
P
D
R
θJA
T
J
T
STG
556
300
2.4
417
-55 ~ +150
-65 ~ +150
C/W
mW
mW/
O
C
O
C/W
o
C
C
o
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Document ID
Issued Date
2009/08/10
Revised Date
2012/04/12
Revision
C
Page.
8
Page 2
DS-221930
SMD Switching Diode
BAS21/BAS21C/BAS21S
Electrical Characteristics
(AT T =25 C unless otherwise noted)
o
A
Formosa MS
UNIT
V
V
PARAMETER
Reverse Breakdown Voltage
I
R
=100μA
Forward Voltage
I
F
= 100 mA
I
F
= 200 mA
Reverse leakage
V
R
= 200 V
V
R
= 200 V, Tj =150°C
Total capacitance
V
R
= 0 V , f = 1.0MHz
Reverse recovery time
I
F
= I
R
= 30mA , I
RR
= 0.1 * I
R
, R
L
= 100
OHM
Symbol
V
(BR)
V
F
Min
250
Max
1.00
1.25
0.1
100
5.0
50
I
R
C
J
t
rr
uA
pF
ns
Recovery Time Equivalent Test Circuit
820
+10
V
2k
100
µH
0.1
µF
DUT
50
Οutput
Pulse
Generator
50
ΩInput
Sampling
Oscilloscope
90%
VR
Input Signal
IR
I
R(REC)
=
30 mA
Output Pulse
(I
F
=
IR
=
30 mA; measured
atI R(REC)
=
3 mA)
IF
0.1
µF
IF
trr
t
tr
10%
tp
t
Notes: 1.
A 2.0 kΩ
variable resistor adjusted for a Forward Current
(I
F
)
of 30 mA.
Notes:
2. Input pulse is adjusted so IR(peak) is equal to 30 mA.
Notes:
3. tp
>>t
rr
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Document ID
Issued Date
2009/08/10
Revised Date
2012/04/12
Revision
C
Page.
8
Page 3
DS-221930
Rating and characteristic curves(BAS21/BAS21C/BAS21S)
Figure 1. Forward Voltage
1200
FORWARD VOLTAGE
(mV)
REVERSE CURRENT
(nA)
TA = −55°C
1000
800
155°C
600
400
200
1
1
10
100
1000
FORWARD CURRENT
(mA)
25°C
7000
6000
5000
4000
3000
6
5
4
3
2
1
0
1
2
Figure 2. Reverse Leakage
TA = 155°C
TA = 25°C
TA = −55°C
5
10
20
50
100 200 300
REVERSE VOLTAGE
(V)
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Document ID
Issued Date
2009/08/10
Revised Date
2012/04/12
Revision
C
Page.
8
Page 4
DS-221930
SMD Switching Diode
BAS21/BAS21C/BAS21S
Formosa MS
Pinning information
Type number
BAS21
Marking code
JS
C
A
B
Symbol
A
B
BAS21C
JU
C
A
B
BAS21S
JT
C
Suggested solder pad layout
SOT-23
0.037(0.95)
0.037(0.95)
0.079(2.0)
0.035(0.90)
0.031(0.80)
Dimensions in inches and (millimeters)
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Document ID
Issued Date
2009/08/10
Revised Date
2012/04/12
Revision
C
Page.
8
Page 5
DS-221930
查看更多>
参数对比
与BAS21C相近的元器件有:BAS21-H、BAS21S。描述及对比如下:
型号 BAS21C BAS21-H BAS21S
描述 Rectifier Diode, 2 Element, 0.225A, 250V V(RRM), Silicon, PLASTIC PACKAGE-3 Rectifier Diode, 1 Element, 0.2A, 250V V(RRM), Silicon, HALOGEN FREE, PLASTIC PACKAGE-3 Rectifier Diode, 2 Element, 0.225A, 250V V(RRM), Silicon, PLASTIC PACKAGE-3
厂商名称 FORMOSA FORMOSA FORMOSA
包装说明 PLASTIC PACKAGE-3 R-PDSO-G3 PLASTIC PACKAGE-3
Reach Compliance Code unknown unknown unknown
ECCN代码 EAR99 EAR99 EAR99
配置 COMMON CATHODE, 2 ELEMENTS SINGLE SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
二极管元件材料 SILICON SILICON SILICON
二极管类型 RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
JESD-30 代码 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3
元件数量 2 1 2
端子数量 3 3 3
最高工作温度 150 °C 150 °C 150 °C
最低工作温度 -55 °C -55 °C -55 °C
最大输出电流 0.225 A 0.2 A 0.225 A
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
最大功率耗散 0.225 W 0.225 W 0.225 W
最大重复峰值反向电压 250 V 250 V 250 V
最大反向恢复时间 0.05 µs 0.05 µs 0.05 µs
表面贴装 YES YES YES
端子形式 GULL WING GULL WING GULL WING
端子位置 DUAL DUAL DUAL
热门器件
热门资源推荐
器件捷径:
A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 AA AB AC AD AE AF AG AH AI AJ AK AL AM AN AO AP AQ AR AS AT AU AV AW AX AY AZ B0 B1 B2 B3 B4 B5 B6 B7 B8 B9 BA BB BC BD BE BF BG BH BI BJ BK BL BM BN BO BP BQ BR BS BT BU BV BW BX BY BZ C0 C1 C2 C3 C4 C5 C6 C7 C8 C9 CA CB CC CD CE CF CG CH CI CJ CK CL CM CN CO CP CQ CR CS CT CU CV CW CX CY CZ D0 D1 D2 D3 D4 D5 D6 D7 D8 D9 DA DB DC DD DE DF DG DH DI DJ DK DL DM DN DO DP DQ DR DS DT DU DV DW DX DZ
需要登录后才可以下载。
登录取消