LESHAN RADIO COMPANY, LTD.
High Voltage Switching Diode
3
CATHODE
1
ANODE
BAS21LT1
3
MAXIMUM RATINGS
Rating
Continuous Reverse Voltage
Peak Forward Current
Peak Forward Surge Current
Symbol
V
R
I
F
I
FM(surge)
Value
250
200
625
Unit
Vdc
mAdc
mAdc
1
2
CASE 318–08, STYLE 8
SOT–23 (TO–236AB)
DEVICE MARKING
BAS21LT1 = JS
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board, (1)
T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
P
D
Max
225
1.8
R
θJA
P
D
556
300
2.4
R
θJA
T
J
, T
stg
417
–55 to +150
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
ELECTRICAL CHARACTERISTICS
(T A = 25°C unless otherwise noted)
Characteristic
Symbol
I
R
—
—
V
(BR)
V
F
—
—
C
D
t
rr
—
—
1000
1250
5.0
50
pF
ns
250
1.0
100
—
Vdc
mV
Min
Max
Unit
µAdc
OFF CHARACTERISTICS
Reverse Voltage Leakage Current
(V
R
= 200Vdc)
(V
R
= 200Vdc, T
J
= 150°C)
Reverse Breakdown Voltage
(I
BR
= 100
µAdc)
Forward Voltage
(I
F
= 100 mAdc)
(I
F
= 200 mAdc)
Diode Capacitance
(V
R
= 0, f = 1.0 MHz)
Reverse Recovery Time
(I
F
= I
R
= 30mAdc, R
L
= 100
Ω)
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
G3–1/2
LESHAN RADIO COMPANY, LTD.
BAS21LT1
+10 V
820
Ω
2.0 k
0.1µF
t
r
t
p
10%
t
I
F
t
rr
t
100
µH
I
F
0.1
µF
50
Ω
OUTPUT
PULSE
GENERATOR
D.U.T.
50
Ω
INPUT
SAMPLING
OSCILLOSCOPE
90%
V
R
INPUT SIGNAL
I
R
i
R(REC)
= 3.0 mA
OUTPUT PULSE
(I
F
= I
R
= 30 mA; MEASURED
at i
R(REC)
= 3.0 mA)
Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (I
F
) of 30 mA.
Notes:
2. Input pulse is adjusted so I
R(peak)
is equal to 30 mA.
Notes:
3. t
p
»
t
rr
Figure 1. Recovery Time Equivalent Test Circuit
G3–2/2
