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BAS35-T

DIODE 0.25 A, 110 V, 2 ELEMENT, SILICON, SIGNAL DIODE, TO-236AB, PLASTIC PACKAGE-3, Signal Diode

器件类别：分立半导体    二极管   

厂商名称：NXP(恩智浦)

厂商官网：https://www.nxp.com

器件标准：

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参数 预览 参数对比
器件参数
参数名称
属性值
是否无铅
不含铅
是否Rohs认证
符合
厂商名称
NXP(恩智浦)
零件包装代码
SOT-23
包装说明
R-PDSO-G3
针数
3
Reach Compliance Code
unknown
ECCN代码
EAR99
配置
COMMON ANODE, 2 ELEMENTS
二极管元件材料
SILICON
二极管类型
RECTIFIER DIODE
最大正向电压 (VF)
1.25 V
JEDEC-95代码
TO-236AB
JESD-30 代码
R-PDSO-G3
JESD-609代码
e3
最大非重复峰值正向电流
3 A
元件数量
2
端子数量
3
最高工作温度
150 °C
最大输出电流
0.25 A
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
峰值回流温度（摄氏度）
260
最大功率耗散
0.25 W
认证状态
Not Qualified
最大重复峰值反向电压
110 V
最大反向电流
0.1 µA
最大反向恢复时间
0.05 µs
表面贴装
YES
技术
AVALANCHE
端子面层
TIN
端子形式
GULL WING
端子位置
DUAL
处于峰值回流温度下的最长时间
40
文档预览
DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
M3D088
BAS29; BAS31; BAS35
General purpose controlled
avalanche (double) diodes
Product data sheet
Supersedes data of 2001 Oct 10
2003 Mar 20
NXP Semiconductors
Product data sheet
General purpose controlled avalanche
(double) diodes
FEATURES
•
Small plastic SMD package
•
Switching speed: max. 50 ns
•
General application
•
Continuous reverse voltage: max. 90 V
•
Repetitive peak reverse voltage: max. 110 V
•
Repetitive peak forward current: max. 600 mA
•
Repetitive peak reverse current: max. 600 mA.
APPLICATIONS
•
General purpose switching in e.g. surface mounted
circuits.
DESCRIPTION
General purpose switching diodes fabricated in planar
technology, and encapsulated in small rectangular plastic
SMD SOT23 packages. The BAS29 consists of a single
diode. The BAS31 has two diodes in series. The BAS35
has two diodes with a common anode.
MARKING
3
handbook, halfpage
2
BAS29; BAS31; BAS35
PINNING
DESCRIPTION
PIN
BAS29
1
2
3
anode
cathode
BAS31
anode
common
connection
BAS35
cathode (k1)
cathode (k2)
common
anode
not connected cathode
1
2
3
3
a. Simplified outline.
c. BAS31 diode.
1
2
n.c.
1
2
3
d. BAS35 diode.
1
TYPE NUMBER
BAS29
BAS31
BAS35
Note
1.
∗
= p : Made in Hong Kong.
∗
= t : Made in Malaysia.
∗
= W : Made in China.
MARKING
CODE
(1)
b. BAS29 diode.
L20 or
∗A8
L21 or
∗V1
L22 or
∗V2
MAM233
Fig.1 Simplified outline (SOT23) and symbols.
2003 Mar 20
2
NXP Semiconductors
Product data sheet
General purpose controlled avalanche
(double) diodes
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
Per diode
V
RRM
V
R
I
F
repetitive peak reverse voltage
continuous reverse voltage
continuous forward current
PARAMETER
CONDITIONS
BAS29; BAS31; BAS35
MIN.
−
−
MAX.
UNIT
110
90
250
150
600
V
V
mA
mA
mA
single diode loaded; see Fig.2;
note 1
double diode loaded; see Fig.2;
note 1
−
−
−
I
FRM
I
FSM
repetitive peak forward current
non-repetitive peak forward current
square wave; T
j
= 25
°C
prior to
surge; see Fig.4
t = 1
µs
t = 100
µs
t=1s
−
−
−
−
−
−
−65
−
10
4
0.75
250
600
5
+150
150
A
A
A
mW
mA
mJ
°C
°C
P
tot
I
RRM
E
RRM
T
stg
T
j
Note
total power dissipation
repetitive peak reverse current
repetitive peak reverse energy
storage temperature
junction temperature
T
amb
= 25
°C;
note 1
t
p
≥
50
µs;
f
≤
20 Hz; T
j
= 25
°C
1. Device mounted on an FR4 printed-circuit board.
2003 Mar 20
3
NXP Semiconductors
Product data sheet
General purpose controlled avalanche
(double) diodes
ELECTRICAL CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
Per diode
V
F
forward voltage
see Fig.3
I
F
= 10 mA
I
F
= 50 mA
I
F
= 100 mA
I
F
= 200 mA
I
F
= 400 mA
I
R
reverse current
see Fig.5
V
R
= 90 V
V
R
= 90 V; T
j
= 150
°C
V
(BR)R
C
d
t
rr
reverse avalanche breakdown
voltage
diode capacitance
reverse recovery time
I
R
= 1 mA
f = 1 MHz; V
R
= 0; see Fig.6
PARAMETER
CONDITIONS
BAS29; BAS31; BAS35
MIN.
MAX.
UNIT
−
−
−
−
−
−
−
120
−
−
750
840
900
1
1.25
100
100
170
35
50
mV
mV
mV
V
V
nA
µA
V
pF
ns
when switched from I
F
= 30 mA to
I
R
= 30 mA; R
L
= 100
Ω;
measured
at I
R
= 3 mA; see Fig.7
THERMAL CHARACTERISTICS
SYMBOL
R
th j-tp
R
th j-a
Note
1. Device mounted on an FR4 printed-circuit board.
PARAMETER
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
note 1
CONDITIONS
VALUE
360
500
UNIT
K/W
K/W
2003 Mar 20
4
NXP Semiconductors
Product data sheet
General purpose controlled avalanche
(double) diodes
GRAPHICAL DATA
MBG440
BAS29; BAS31; BAS35
handbook, halfpage
300
handbook, halfpage
600
MBH280
IF
(mA)
200
(1)
IF
(mA)
400
(1)
(2)
(3)
100
(2)
200
0
0
100
Tamb (
o
C)
200
0
0
1
VF (V)
2
Device mounted on an FR4 printed-circuit board.
(1) Single diode loaded.
(2) Double diode loaded.
Fig.2
Maximum permissible continuous forward
current as a function of ambient
temperature.
(1) T
j
= 150
°C;
typical values.
(2) T
j
= 25
°C;
typical values.
(3) T
j
= 25
°C;
maximum values.
Fig.3
Forward current as a function of forward
voltage.
10
2
handbook, full pagewidth
IFSM
(A)
MBH327
10
1
10
−1
1
Based on square wave currents.
T
j
= 25
°C
prior to surge.
10
10
2
10
3
tp (µs)
10
4
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
2003 Mar 20
5
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参数对比
与BAS35-T相近的元器件有：BAS31 T/R、BAS29 T/R、BAS29-T、BAS31-T、BAS31/T3。描述及对比如下：
型号 BAS35-T BAS31 T/R BAS29 T/R BAS29-T BAS31-T BAS31/T3
描述 DIODE 0.25 A, 110 V, 2 ELEMENT, SILICON, SIGNAL DIODE, TO-236AB, PLASTIC PACKAGE-3, Signal Diode 发光二极管（通用、电源、转换） diode SW tape-7 发光二极管（通用、电源、转换） diode SW tape-7 DIODE 0.25 A, 110 V, SILICON, SIGNAL DIODE, TO-236AB, PLASTIC PACKAGE-3, Signal Diode DIODE 0.25 A, 110 V, 2 ELEMENT, SILICON, SIGNAL DIODE, TO-236AB, PLASTIC PACKAGE-3, Signal Diode DIODE 0.25 A, 110 V, 2 ELEMENT, SILICON, SIGNAL DIODE, TO-236AB, PLASTIC PACKAGE-3, Signal Diode
是否Rohs认证 符合 - - 符合 符合 符合
厂商名称 NXP(恩智浦) NXP(恩智浦) - - NXP(恩智浦) NXP(恩智浦)
零件包装代码 SOT-23 - - SOT-23 SOT-23 SOT-23
包装说明 R-PDSO-G3 - - R-PDSO-G3 R-PDSO-G3 R-PDSO-G3
针数 3 - - 3 3 3
Reach Compliance Code unknown - - compliant unknown compliant
ECCN代码 EAR99 - - EAR99 EAR99 EAR99
配置 COMMON ANODE, 2 ELEMENTS Dual Series - SINGLE SERIES CONNECTED, CENTER TAP, 2 ELEMENTS SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
二极管元件材料 SILICON - - SILICON SILICON SILICON
二极管类型 RECTIFIER DIODE - - RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
最大正向电压 (VF) 1.25 V - - 1.25 V 1.25 V 1.25 V
JEDEC-95代码 TO-236AB - - TO-236AB TO-236AB TO-236AB
JESD-30 代码 R-PDSO-G3 - - R-PDSO-G3 R-PDSO-G3 R-PDSO-G3
JESD-609代码 e3 - - e3 e3 e3
最大非重复峰值正向电流 3 A - - 3 A 3 A 3 A
元件数量 2 - - 1 2 2
端子数量 3 - - 3 3 3
最高工作温度 150 °C - - 150 °C 150 °C 150 °C
最大输出电流 0.25 A - - 0.25 A 0.25 A 0.25 A
封装主体材料 PLASTIC/EPOXY - - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR - - RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE - - SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
峰值回流温度（摄氏度） 260 - - 260 260 260
最大功率耗散 0.25 W - - 0.25 W 0.25 W 0.25 W
认证状态 Not Qualified - - Not Qualified Not Qualified Not Qualified
最大重复峰值反向电压 110 V - - 110 V 110 V 110 V
最大反向电流 0.1 µA - - 0.1 µA 0.1 µA 0.1 µA
最大反向恢复时间 0.05 µs - - 0.05 µs 0.05 µs 0.05 µs
表面贴装 YES - - YES YES YES
技术 AVALANCHE - - AVALANCHE AVALANCHE AVALANCHE
端子面层 TIN - - Tin (Sn) TIN Tin (Sn)
端子形式 GULL WING - - GULL WING GULL WING GULL WING
端子位置 DUAL - - DUAL DUAL DUAL
处于峰值回流温度下的最长时间 40 - - 40 40 40
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器件捷径:
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