DISCRETE SEMICONDUCTORS
DATA SHEET
M3D891
BOTTOM VIEW
BAS40L
Schottky barrier diode
Product specification
2003 May 20
Philips Semiconductors
Product specification
Schottky barrier diode
FEATURES
•
Low diode capacitance
•
Low forward voltage
•
Guard ring protected
•
High breakdown voltage
•
Leadless ultra small plastic package
(1 mm
×
0.6 mm
×
0.5 mm)
•
Boardspace 1.17
mm
2
(approx. 10% of SOT23)
•
Power dissipation comparable to SOT23.
Bottom view
MDB391
BAS40L
DESCRIPTION
Planar Schottky barrier diode with an integrated guard ring
for stress protection. Encapsulated in a SOD882 leadless
ultra small plastic package.
handbook, halfpage
APPLICATIONS
•
Ultra high-speed switching
•
Voltage clamping
•
Protection circuits
•
Mobile communication, digital (still) cameras, PDAs and
PCMCIA cards.
Fig.1 Simplified outline (SOD882) and symbol.
Marking code:
S6.
The marking bar indicates the cathode.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
Per diode
V
R
I
F
I
FRM
I
FSM
T
stg
T
j
continuous reverse voltage
continuous forward current
repetitive peak forward current
non-repetitive peak forward current
storage temperature
junction temperature
t
p
≤
1s;
δ ≤
0.5
t
p
< 10 ms
−
−
−
−
−65
−
40
120
120
200
+150
150
V
mA
mA
mA
°C
°C
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
2003 May 20
2
Philips Semiconductors
Product specification
Schottky barrier diode
ELECTRICAL CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
V
F
PARAMETER
continuous forward voltage
CONDITIONS
see Fig.2
I
F
= 1 mA
I
F
= 10 mA
I
F
= 40 mA
I
R
C
d
Note
1. Pulse test: t
p
= 300
µs; δ
= 0.02.
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
Note
1. Refer to SOD882 standard mounting conditions (footprint), FR4 with 60
µm
copper strip line.
Soldering
Reflow soldering is the only recommended soldering method.
PARAMETER
thermal resistance from junction to ambient
note 1
CONDITIONS
continuous reverse current
diode capacitance
V
R
= 30 V; see Fig.3; note 1
V
R
= 40 V; see Fig.3; note 1
V
R
= 0 V; f = 1 MHz; see Fig.5
380
500
1
1
10
5
BAS40L
MAX.
UNIT
mV
mV
V
µA
µA
pF
VALUE
500
UNIT
K/W
2003 May 20
3
Philips Semiconductors
Product specification
Schottky barrier diode
GRAPHICAL DATA
BAS40L
handbook, halfpage
10
2
MLC361
handbook, halfpage
10
3
MHC512
IF
(mA)
10
IR
(µA)
10
2
(1)
10
(1)
(2)
(3)
(4)
1
1
10
−1
(2)
10
−1
(3)
10
−2
0
0.2
0.4
0.6
0.8
VF (V)
1
10
−2
0
10
20
VR (V)
30
(1) T
amb
= 125
°C.
(2) T
amb
= 85
°C.
(3) T
amb
= 25
°C.
(4) T
amb
=
−40 °C.
(1) T
amb
= 150
°C.
(2) T
amb
= 85
°C.
(3) T
amb
= 25
°C.
Fig.2
Forward current as a function of forward
voltage; typical values.
Fig.3
Reverse current as a function of reverse
voltage; typical values.
10
3
handbook, halfpage
r diff
(Ω)
10
2
MLC364
MHC513
handbook, halfpage
5
Cd
(pF)
4
3
2
10
1
1
10
1
1
10
IF (mA)
10
2
0
0
10
20
VR (V)
30
f = 10 kHz.
f = 1 MHz; T
amb
= 25
°C.
Fig.4
Differential forward resistance as a function
of forward current; typical values.
Fig.5
Diode capacitance as a function of reverse
voltage; typical values.
2003 May 20
4
Philips Semiconductors
Product specification
Schottky barrier diode
PACKAGE OUTLINE
Leadless ultra small plastic package; 2 terminals; body 1.0 x 0.6 x 0.5 mm
BAS40L
SOD882
L
L
1
2
b
e1
A
A1
E
D
(2)
0
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
(1)
0.50
0.46
A
1
max.
0.03
b
0.55
0.47
D
0.62
0.55
E
1.02
0.95
e
1
0.65
L
0.30
0.22
0.5
scale
1 mm
Notes
1. Including plating thickness
2. The marking bar indicates the cathode
OUTLINE
VERSION
SOD882
REFERENCES
IEC
JEDEC
JEITA
EUROPEAN
PROJECTION
ISSUE DATE
03-04-16
03-04-17
2003 May 20
5
