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BAS70-GS18

DIODE 0.2 A, 70 V, SILICON, SIGNAL DIODE, PLASTIC PACKAGE-3, Signal Diode

器件类别:分立半导体    二极管   

厂商名称:Vishay(威世)

厂商官网:http://www.vishay.com

器件标准:  

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器件参数
参数名称
属性值
是否无铅
不含铅
是否Rohs认证
符合
厂商名称
Vishay(威世)
包装说明
R-PDSO-G3
针数
3
Reach Compliance Code
unknown
ECCN代码
EAR99
配置
SINGLE
二极管元件材料
SILICON
二极管类型
RECTIFIER DIODE
最大正向电压 (VF)
0.41 V
JESD-30 代码
R-PDSO-G3
JESD-609代码
e3
湿度敏感等级
1
最大非重复峰值正向电流
0.6 A
元件数量
1
端子数量
3
最高工作温度
150 °C
最大输出电流
0.2 A
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
峰值回流温度(摄氏度)
260
最大功率耗散
0.2 W
认证状态
Not Qualified
最大重复峰值反向电压
70 V
最大反向恢复时间
0.005 µs
表面贴装
YES
技术
SCHOTTKY
端子面层
Matte Tin (Sn)
端子形式
GULL WING
端子位置
DUAL
处于峰值回流温度下的最长时间
40
文档预览
VISHAY
BAS70 to BAS70-06
Vishay Semiconductors
Small Signal Schottky Diodes, Single & Dual
Features
• These diodes feature very low turn-on voltage and
fast switching.
• These devices are protected by a PN junction
guard ring against excessive voltage, such as
electrostatic discharges.
BAS70
3
BAS70-04
3
Mechanical Data
Case:
SOT-23 Plastic case
Weight:
approx. 8.8 mg
Packaging Codes/Options:
GS18 / 10 k per 13" reel (8 mm tape), 10 k/box
GS08 / 3 k per 7" reel (8 mm tape), 15 k/box
18439
Top View
1
2
1
2
BAS70-05
3
BAS70-06
3
Top View
1
2
1
2
Parts Table
Part
BAS70
BAS70-04
BAS70-05
BAS70-06
Ordering code
BAS70-GS18 or BAS70-GS08
BAS70-04-GS18 or BAS70-04-GS08
BAS70-05-GS18 or BAS70-05-GS08
BAS70-06-GS18 or BAS70-06-GS08
73
74
75
76
Marking
Remarks
Tape and Reel
Tape and Reel
Tape and Reel
Tape and Reel
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Parameter
Repetitive peak reverse voltage
Forward continuous current
Surge forward current
Power dissipation
1)
1)
Test condition
T
amb
= 25 °C
t
p
< 1 s, T
amb
= 25 °C
T
amb
= 25 °C
Symbol
V
RRM
= V
RWM
= V
R
I
F
I
FSM
P
tot
Value
70
200
1)
600
1)
200
1)
Unit
V
mA
mA
mW
Device on fiberglass substrate, see layout on next page
Thermal Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Thermal resistance junction to
ambient air
Junction temperature
Storage temperature range
1)
Test condition
Symbol
R
thJA
T
j
T
S
Value
430
1)
150
- 55 to +150
Unit
°C
°C
°C
Device on fiberglass substrate, see layout on next page
www.vishay.com
1
Document Number 85702
Rev. 1.5, 08-Jul-04
BAS70 to BAS70-06
Vishay Semiconductors
VISHAY
Electrical Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Reverse breakdown voltage
Leakage current
Forward voltage
Forward voltage
1)
Diode capacitance
Reverse recovery time
1)
Test condition
I
R
= 10
µA
(pulsed)
V
R
= 50 V
I
F
= 1.0 mA
I
F
= 15 mA,
V
R
= 0 V, f = 1 MHz
I
F
= 10 mA, I
R
= 10 mA,
I
rr
= 1 mA, R
L
= 100
Symbol
V
(BR)
I
R
V
F
V
F
C
tot
t
rr
Min
70
Typ.
20
Max
100
410
1000
Unit
V
nA
mV
mV
pF
ns
1.5
2
5
Pulse test; t
p
300
µs
Layout for R
thJA
test
Thickness:
Fiberglass 1.5 mm (0.059 in.)
Copper leads 0.3 mm (0.012 in.)
7.5 (0.3)
3 (0.12)
1 (0.4)
12 (0.47)
15 (0.59)
0.8 (0.03)
2 (0.8)
1 (0.4)
2 (0.8)
5 (0.2)
1.5 (0.06)
5.1 (0.2)
17451
www.vishay.com
2
Document Number 85702
Rev. 1.5, 08-Jul-04
VISHAY
Package Dimensions in mm (Inches)
BAS70 to BAS70-06
Vishay Semiconductors
1.15 (.045)
0.175 (.007)
0.098 (.005)
0.1 (.004) max.
0.4 (.016)
0.4 (.016)
2.6 (.102)
2.35 (.092)
0.95 (.037)
ISO Method E
3.1 (.122)
2.8 (.110)
0.4 (.016)
3
1.43 (.056)
1.20(.047)
Mounting Pad Layout
0.52 (0.020)
0.9 (0.035)
2.0 (0.079)
1
0.95 (.037)
2
0.95 (.037)
0.95 (0.037)
0.95 (0.037)
17418
Document Number 85702
Rev. 1.5, 08-Jul-04
www.vishay.com
3
BAS70 to BAS70-06
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of
Vishay Semiconductor GmbH
to
1. Meet all present and future national and international statutory requirements.
VISHAY
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH
has been able to use its policy of continuous improvements to eliminate the
use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH
can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
www.vishay.com
4
Document Number 85702
Rev. 1.5, 08-Jul-04
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参数对比
与BAS70-GS18相近的元器件有:BAS70-GS08。描述及对比如下:
型号 BAS70-GS18 BAS70-GS08
描述 DIODE 0.2 A, 70 V, SILICON, SIGNAL DIODE, PLASTIC PACKAGE-3, Signal Diode DIODE 0.2 A, 70 V, SILICON, SIGNAL DIODE, PLASTIC PACKAGE-3, Signal Diode
是否无铅 不含铅 不含铅
是否Rohs认证 符合 符合
厂商名称 Vishay(威世) Vishay(威世)
包装说明 R-PDSO-G3 R-PDSO-G3
针数 3 3
Reach Compliance Code unknown unknown
ECCN代码 EAR99 EAR99
配置 SINGLE SINGLE
二极管元件材料 SILICON SILICON
二极管类型 RECTIFIER DIODE RECTIFIER DIODE
最大正向电压 (VF) 0.41 V 0.41 V
JESD-30 代码 R-PDSO-G3 R-PDSO-G3
JESD-609代码 e3 e3
湿度敏感等级 1 1
最大非重复峰值正向电流 0.6 A 0.6 A
元件数量 1 1
端子数量 3 3
最高工作温度 150 °C 150 °C
最大输出电流 0.2 A 0.2 A
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE SMALL OUTLINE
峰值回流温度(摄氏度) 260 260
最大功率耗散 0.2 W 0.2 W
认证状态 Not Qualified Not Qualified
最大重复峰值反向电压 70 V 70 V
最大反向恢复时间 0.005 µs 0.005 µs
表面贴装 YES YES
技术 SCHOTTKY SCHOTTKY
端子面层 Matte Tin (Sn) Matte Tin (Sn)
端子形式 GULL WING GULL WING
端子位置 DUAL DUAL
处于峰值回流温度下的最长时间 40 40
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