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BAT42W-T1

Rectifier Diode, Schottky, 1 Element, 0.2A, 30V V(RRM), Silicon, PLASTIC PACKAGE-2

器件类别:分立半导体    二极管   

厂商名称:SENSITRON

厂商官网:http://www.sensitron.com/

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器件参数
参数名称
属性值
是否无铅
含铅
是否Rohs认证
不符合
包装说明
PLASTIC PACKAGE-2
针数
2
Reach Compliance Code
compliant
ECCN代码
EAR99
配置
SINGLE
二极管元件材料
SILICON
二极管类型
RECTIFIER DIODE
JESD-30 代码
R-PDSO-G2
湿度敏感等级
1
元件数量
1
端子数量
2
最大输出电流
0.2 A
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
峰值回流温度(摄氏度)
NOT SPECIFIED
最大功率耗散
0.2 W
认证状态
Not Qualified
最大重复峰值反向电压
30 V
表面贴装
YES
技术
SCHOTTKY
端子形式
GULL WING
端子位置
DUAL
处于峰值回流温度下的最长时间
NOT SPECIFIED
Base Number Matches
1
文档预览
SENSITRON
SEMICONDUCTOR
Data Sheet 2927, Rev. -
BAT42W / BAT43W

SURFACE MOUNT SCHOTTKY BARRIER DIODE
Features
l
l
l
Low Turn-on Voltage
SOD-123
Dim
A
B
C
D
E
G
H
Min
3.6
2.5
1.4
0.5
0.4
0.95
Max
3.9
2.8
1.8
0.7
0.2
1.35
Fast Switching
A
PN Junction Guard Ring for Transient and
ESD Protection
l
Designed for Surface Mount Application
C
l
Plastic Material – UL Recognition Flammability
D
Classification 94V-O
B


E

Mechanical Data
l
l
l
l
l
Case: SOD-123, Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: Cathode Band
Weight: 0.01 grams (approx.)
Marking: BAT42W
L2
BAT43W
L3
G
H
J
J
0.12
All Dimensions in mm

Maximum Ratings
@T
A
=25°C unless otherwise specified



Characteristic
Symbol
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
Repetitive Peak Forward Current (Note 1)
Non-Repetitive Peak Forward Surge Current
Power Dissipation
Typical Thermal Resistance, Junction to Ambient Air (Note 1)
Operating and Storage Temperature Range
@T
L
= 70°C
@ t < 1.0s
@ t < 10ms
V
RRM
V
RWM
V
R
V
R(RMS)
I
O
I
FRM
I
FSM
P
d
R
θJA
T
j
, T
STG
BAT42W / BAT43W
Unit
30
21
0.2
500
4.0
200
625
-65 to +125
V
V
A
mA
A
mW
K/W
°C

Electrical Characteristics
Characteristic
BAT42W
Forward Voltage
BAT42W
BAT43W
BAT43W
Reverse Leakage Current
Junction Capacitance
@T
A
=25°C unless otherwise specified
Symbol
Min
Typ
Max
0.4
Unit
Test Condition
@ I
F
= 10mA
V
F
1.0
0.33
1.0
0.5
10
V
@ I
F
= 200mA
@ I
F
= 20mA
@ I
F
= 200mA
@ V
R
= 30V
V
R
= 1.0V, f = 1.0MHz
I
R
C
j
µA
pF
Note: 1. Valid provided that terminals are kept at ambient temperature.
221 West Industry Court
!
Deer Park, NY 11729-4681
!
(631) 586-7600 FAX (631) 242-9798
World Wide Web Site - http://www.sensitron.com
E-Mail Address - sales@sensitron.com
SENSITRON
SEMICONDUCTOR
Data Sheet 2927, Rev. -









221 West Industry Court
!
Deer Park, NY 11729-4681
!
(631) 586-7600 FAX (631) 242-9798
World Wide Web Site - http://www.sensitron.com
E-Mail Address - sales@sensitron.com
SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DISCLAIMER:
1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product
characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version
of the datasheet(s).
2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment,
medical equipment, and safety equipment), safety should be ensured by using semiconductor devices that feature assured safety or by
means of users’ fail-safe precautions or other arrangement.
3- In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during
operation of the user’s units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual
property claims or any other problems that may result from applications of information, products or circuits described in the datasheets.
4- In no event shall Sensitron Semiconductor be liable for any failure in a semiconductor device or any secondary damage resulting from
use at a value exceeding the absolute maximum rating.
5- No license is granted by the datasheet(s) under any patents or other rights of any third party or Sensitron Semiconductor.
6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of
Sensitron Semiconductor.
7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will
hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third
party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and
regulations.
221 West Industry Court
Deer Park, NY 11729-4681
(631) 586-7600 FAX (631) 242-9798
World Wide Web - http://www.sensitron.com
E-Mail Address - sales@sensitron.com
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参数对比
与BAT42W-T1相近的元器件有:BAT43W-T1、BAT42W-T3。描述及对比如下:
型号 BAT42W-T1 BAT43W-T1 BAT42W-T3
描述 Rectifier Diode, Schottky, 1 Element, 0.2A, 30V V(RRM), Silicon, PLASTIC PACKAGE-2 Rectifier Diode, Schottky, 1 Element, 0.2A, 30V V(RRM), Silicon, PLASTIC PACKAGE-2 Rectifier Diode, Schottky, 1 Element, 0.2A, 30V V(RRM), Silicon, PLASTIC PACKAGE-2
是否无铅 含铅 含铅 含铅
是否Rohs认证 不符合 不符合 不符合
包装说明 PLASTIC PACKAGE-2 PLASTIC PACKAGE-2 R-PDSO-G2
针数 2 2 2
Reach Compliance Code compliant compliant compliant
ECCN代码 EAR99 EAR99 EAR99
配置 SINGLE SINGLE SINGLE
二极管元件材料 SILICON SILICON SILICON
二极管类型 RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
JESD-30 代码 R-PDSO-G2 R-PDSO-G2 R-PDSO-G2
元件数量 1 1 1
端子数量 2 2 2
最大输出电流 0.2 A 0.2 A 0.2 A
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
峰值回流温度(摄氏度) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
最大功率耗散 0.2 W 0.2 W 0.2 W
认证状态 Not Qualified Not Qualified Not Qualified
最大重复峰值反向电压 30 V 30 V 30 V
表面贴装 YES YES YES
技术 SCHOTTKY SCHOTTKY SCHOTTKY
端子形式 GULL WING GULL WING GULL WING
端子位置 DUAL DUAL DUAL
处于峰值回流温度下的最长时间 NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
湿度敏感等级 1 1 -
Base Number Matches 1 1 -
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