BAT46
Vishay Semiconductors
formerly General Semiconductor
Schottky Diode
DO-204AH
(DO-35 Glass)
Features
• For general purpose applications.
• This diode features very low turn-on voltage and
fast switching. This device is protected by a PN
junction guard ring against excessive voltage, such
as electrostatic discharges
• This diode is also available in the SOD-123 case
with type designation BAT46W and in the
MiniMELF case with type designations LL46.
Dimensions in inches
and (millimeters)
Mechanical Data
Case:
DO-35 Glass Case
Weight:
approx. 0.13g
Packaging Codes/Options:
D7/10K per 13” reel (52mm tape), 20K/box
D8/10K per Ammo tape (52mm tape), 20K/box
Maximum Ratings & Thermal Characteristics
Parameter
Repetitive Peak Reverse Voltage
Forward Continuous Current at T
amb
= 25°C
Repetitive Peak Forward Current
at t
p
< 1s,
δ
< 0.5, T
amb
= 25°C
Surge Forward Current at t
p
< 10ms, T
amb
= 25°C
Power Dissipation
(1)
at T
amb
= 65°C
Thermal Resistance Juntion to Ambient Air
Junction Temperature
Ambient Operating Temperature Range
Storage Temperature Range
Symbol
V
RRM
I
F
I
FRM
I
FSM
P
tot
R
θJA
T
j
T
amb
T
S
J
Ratings at 25°C ambient temperature unless otherwise specified.
Value
100
150
(1)
350
(1)
750
(1)
150
(1)
0.3
(1)
125
–65 to +125
–65 to +150
Unit
V
mA
mA
mA
mW
°C/mW
°C
°C
°C
Electrical Characteristics
(T
Parameter
Reverse Breakdown Voltage
= 25°C unless otherwise noted)
Symbol
V
(BR)R
Test Condition
I
R =
100µA (pulsed)
V
R
= 1.5V
V
R
= 1.5V, Tj = 60°C
V
R
= 10V
V
R
= 10V, Tj = 60°C
V
R
= 50V
V
R
= 50V, Tj = 60°C
V
R
= 75V
V
R
= 75V, Tj = 60°C
I
F
= 0.1mA
I
F
= 10mA
I
F
= 250mA
V
R
= 0V, f = 1MHz
V
R
= 1V, f = 1MHz
Min
100
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
—
—
—
—
—
—
—
10
6
Max
—
0.5
5
0.8
7.5
2
15
5
20
0.25
0.45
1
—
—
Unit
V
Leakage Current
Pulse Test tp < 300µs,
δ
< 2%
I
R
µA
Forward Voltage
Pulse Test tp < 300µs,
δ
< 2%
Capacitance
V
F
V
C
tot
pF
Note:
(1) Valid provided that leads at a distance of 4mm from case are kept at ambient temperature
Document Number 88139
10-May-02
www.vishay.com
1
BAT46
Vishay Semiconductors
formerly General Semiconductor
Ratings and
Characteristic Curves
(T
A
= 25°C unless otherwise noted)
Forward Characteristics
Typical Reverse Characteristics
mA
1000
BAT46
mA
10
BAT46
100
I
F
Reverse Current, (µA)
T
J
= 60°C
10
T
J
= 25°C
1
1
0.1
0.01
0
0.2
0.4
0.6
0.8
1
1.2
V
F
(V)
0.1
0
20
40
60
80
100
Percentage of Voltage (%)
Admissible Power Dissipation
vs. Ambient Temperature
mW
BAT46
200
P
TOT
100
0
0
100
T
AMB
(°C)
200
www.vishay.com
2
Document Number 88139
10-May-02
