BAT54 / 54A / 54C / 54S
Vishay Semiconductors
Small Signal Schottky Diodes, Single & Dual
Features
• These diodes feature very low turn-on voltage and
fast switching.
• These devices are protected by a PN junction
guard ring against excessive voltage, such as
electrostatic discharges.
BAT54
3
BAT54A
3
Mechanical Data
Case:
SOT-23 Plastic case
Weight:
approx. 8.8 mg
Packaging Codes/Options:
GS18 / 10 k per 13" reel (8 mm tape), 10 k/box
GS08 / 3 k per 7" reel (8 mm tape), 15 k/box
18034
Top View
1
2
1
2
BAT54C
3
BAT54S
3
Top View
1
2
1
2
Parts Table
Part
BAT54
BAT54A
BAT54C
BAT54S
Ordering code
BAT54-GS18 or BAT54-GS08
BAT54A-GS18 or BAT54A-GS08
BAT54C-GS18 or BAT54C-GS08
BAT54S-GS18 or BAT54S-GS08
L4
L42
L43
L44
Marking
Remarks
Tape and Reel
Tape and Reel
Tape and Reel
Tape and Reel
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Parameter
Repetitive peak reverse voltage
Forward continuous current
Repetitive peak forward current
Surge forward current current
Power dissipation
1)
Test condition
Symbol
V
RRM
I
F
I
FRM
Value
30
200
1)
300
1)
600
1)
230
Unit
V
mA
mA
mA
mW
t
p
< 1 s
I
FSM
P
tot
Device on fiberglass substrate, see layout on next page.
Document Number 85508
Rev. 1.6, 24-Nov-04
www.vishay.com
1
BAT54 / 54A / 54C / 54S
Vishay Semiconductors
Thermal Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Thermal resistance junction to
ambiant air
Junction temperature
Storage temperature range
1)
Test condition
Symbol
R
thJA
T
j
= T
stg
T
S
Value
430
1)
- 65 to + 150
- 65 to + 150
Unit
°C/W
°C
°C
Device on fiberglass substrate, see layout on next page.
Electrical Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Reverse Breakdown voltage
Leakage current
Forward voltage
Test condition
I
R
= 100
µA
pulses
Pulse test t
p
< 300
µs, δ
< 2 % at
V
R
= 25 V
I
F
= 0.1 mA, t
p
< 300
µs, δ
< 2 %
I
F
= 1 mA, t
p
< 300
µs, δ
< 2 %
I
F
= 10 mA, t
p
< 300
µs, δ
< 2 %
I
F
= 30 mA, t
p
< 300
µs, δ
< 2 %
I
F
= 100 mA, t
p
< 300
µs, δ
< 2 %
Diode capacitance
Reverse recovery time
V
R
= 1 V, f = 1 MHz
I
F
= 10 mA through I
R
= 10 mA
to I
rr
= 1mA, R
L
= 100
Ω
Symbol
V
(BR)
I
R
V
F
V
F
V
F
V
F
V
F
C
tot
t
rr
Min
30
2
240
320
400
500
1000
10
5
Typ.
Max
Unit
V
µA
mV
mV
mV
mV
mV
pF
ns
Layout for R
thJA
test
Thickness:
Fiberglass 1.5 mm (0.059 in.)
Copper leads 0.3 mm (0.012 in.)
7.5 (0.3)
3 (0.12)
1 (0.4)
12 (0.47)
15 (0.59)
0.8 (0.03)
2 (0.8)
1 (0.4)
2 (0.8)
5 (0.2)
1.5 (0.06)
5.1 (0.2)
17451
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2
Document Number 85508
Rev. 1.6, 24-Nov-04
BAT54 / 54A / 54C / 54S
Vishay Semiconductors
Typical Characteristics (Tamb = 25
°C
unless otherwise specified)
1000
100
I
F
in mA
T
J
= 125°C
ˇ
ˇ
T
J
= -40°C
10
1
0.1
0.01
0
0.2
0.4
ˇ
T = 25°C
J
18025
0.6 0.8
V
F
in V
1.0
1.2 1.4
Figure 1. Typical Forward Voltage Forward Current at Various
Temperatures
14
12
10
C
in
pF
8
6
4
2
0
0
4
8
16
12
V
R
in V
20
24
28
18026
Figure 2. Typical Capacitance °C vs. Reverse Applied Voltage V
R
1000
100
I
R
in
µ
A
10
1
0.1
0.01
0
18027
T
J
= 125°ˇ
C
T
J
= 100°ˇ
C
T
J
= 75°ˇ
C
T
J
= 50ˇ°C
ˇ
T
J
= 25°C
5
10
15
V
R
in
V
20
25
30
Figure 3. Typical Variation of Reverse Current at Various
Temperatures
Document Number 85508
Rev. 1.6, 24-Nov-04
www.vishay.com
3
BAT54 / 54A / 54C / 54S
Vishay Semiconductors
Package Dimensions in mm (Inches)
1.15 (.045)
0.175 (.007)
0.098 (.005)
0.1 (.004) max.
0.4 (.016)
0.4 (.016)
2.6 (.102)
2.35 (.092)
0.95 (.037)
ISO Method E
3.1 (.122)
2.8 (.110)
0.4 (.016)
3
1.43 (.056)
1.20(.047)
Mounting Pad Layout
0.52 (0.020)
0.9 (0.035)
2.0 (0.079)
1
0.95 (.037)
2
0.95 (.037)
0.95 (0.037)
0.95 (0.037)
17418
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4
Document Number 85508
Rev. 1.6, 24-Nov-04
BAT54 / 54A / 54C / 54S
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
Document Number 85508
Rev. 1.6, 24-Nov-04
www.vishay.com
5
