DISCRETE SEMICONDUCTORS
DATA SHEET
M3D883
BAT54CM
Schottky barrier double diode
Product data sheet
2003 Nov 11
NXP Semiconductors
Product data sheet
Schottky barrier double diode
FEATURES
•
Low forward voltage
•
Leadless ultra small plastic package
(1.0
×
0.6
×
0.5 mm)
•
Boardspace 1.17 mm
2
(approx. 10% of SOT23)
•
Power dissipation comparable to SOT23.
APPLICATIONS
•
Ultra high-speed switching
•
Voltage clamping
•
Protection circuits
•
Mobile communications, digital (still) cameras, PDAs
and PCMCIA cards.
DESCRIPTION
Planar Schottky barrier double diode encapsulated in a
SOT883 leadless ultra small plastic package.
Top view
handbook, halfpage
BAT54CM
PINNING
PIN
1
2
3
anode (a
1
)
anode (a
2
)
common cathode
DESCRIPTION
1
3
2
cathode mark
MARKING
1
TYPE NUMBER
BAT54CM
MARKING CODE
S3
3
2
Bottom view
MLE232
Fig.1
Simplified outline (SOT883) and symbol.
ORDERING INFORMATION
PACKAGE
TYPE NUMBER
NAME
BAT54CM
−
DESCRIPTION
leadless ultra small plastic package; 3 solder lands;
body 1.0
×
0.6
×
0.5 mm
VERSION
SOT883
2003 Nov 11
2
NXP Semiconductors
Product data sheet
Schottky barrier double diode
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
R
I
F
I
FRM
I
FSM
T
stg
T
j
P
tot
Note
1. Refer to SOT883 standard mounting conditions (footprint); FR4 with 60
μm
copper strip line.
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
Note
1. Refer to SOT883 standard mounting conditions (footprint), FR4 with 60
μm
copper strip line.
Soldering
Reflow soldering is the only recommended soldering method.
ELECTRICAL CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
Per diode
V
F
forward voltage
see Fig.2;
I
F
= 0.1 mA
I
F
= 1 mA
I
F
= 10 mA
I
F
= 30 mA
I
F
= 100 mA
I
R
C
d
Note
1. Pulsed test: t
p
≤
300
μs; δ ≤
0.02.
continuous reverse current
diode capacitance
V
R
= 25 V; note 1; see Fig.3
f = 1 MHz; V
R
= 1 V; see Fig.4
240
320
400
500
800
2
10
PARAMETER
CONDITIONS
MAX.
PARAMETER
thermal resistance from junction to
ambient
note 1
CONDITIONS
VALUE
500
PARAMETER
continuous reverse voltage
continuous forward current
repetitive peak forward current
non-repetitive peak forward current
storage temperature
junction temperature
total power dissipation (per package) T
amb
≤
25
°C;
note 1
t
p
≤
1 s;
δ ≤
0.5
t
p
< 10 ms
CONDITIONS
−
−
−
−
−65
−
−
MIN.
BAT54CM
MAX.
30
200
300
600
+150
150
250
V
UNIT
mA
mA
mA
°C
°C
mW
UNIT
K/W
UNIT
mV
mV
mV
mV
mV
μA
pF
2003 Nov 11
3
NXP Semiconductors
Product data sheet
Schottky barrier double diode
BAT54CM
MSA892
10
3
handbook, halfpage
IF
(mA)
10
2
(1) (2) (3)
10
3
IR
(μA)
10
2
(2)
(1)
MSA893
10
10
1
(1)
(2) (3)
1
(3)
10
1
10
1
0
0.4
0.8
VF (V)
1.2
0
10
20
VR (V)
30
(1) T
amb
= 125
°C.
(2) T
amb
= 85
°C.
(3) T
amb
= 25
°C.
(1) T
amb
= 125
°C.
(2) T
amb
= 85
°C.
(3) T
amb
= 25
°C.
Fig.2
Forward current as a function of forward
voltage; typical values.
Fig.3
Reverse current as a function of reverse
voltage; typical values.
handbook, halfpage
15
MSA891
Cd
(pF)
10
5
0
0
10
20
VR (V)
30
f = 1 MHz; T
amb
= 25
°C.
Fig.4
Diode capacitance as a function of reverse
voltage; typical values.
2003 Nov 11
4
NXP Semiconductors
Product data sheet
Schottky barrier double diode
PACKAGE OUTLINE
BAT54CM
Leadless ultra small plastic package; 3 solder lands; body 1.0 x 0.6 x 0.5 mm
SOT883
L
2
b
e
L1
3
b1
1
e1
A
A1
E
D
0
0.5
scale
1 mm
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
(1)
0.50
0.46
A
1
max.
0.03
b
0.20
0.12
b
1
0.55
0.47
D
0.62
0.55
E
1.02
0.95
e
0.35
e
1
0.65
L
0.30
0.22
L
1
0.30
0.22
Note
1. Including plating thickness
OUTLINE
VERSION
SOT883
REFERENCES
IEC
JEDEC
JEITA
SC-101
EUROPEAN
PROJECTION
ISSUE DATE
03-02-05
03-04-03
2003 Nov 11
5
