BAT54...
Silicon Schottky Diodes
•
For low-loss, fast-recovery, meter protection,
bias isolation and clamping application
•
Guard ring protected
•
Low forward voltage
•
Pb-free (RoHS compliant) package
•
Qualified according AEC Q101
1)
BAT54-02LRH
BAT54-02V
BAT54-03W
BAT54
BAT54W
!
BAT54-04
BAT54-04W
!
BAT54-05
BAT54-05W
!
BAT54-06
BAT54-06W
!
,
,
,
,
,
,
Type
BAT54
BAT54-02LRH*
BAT54-02V
BAT54-03W
BAT54-04
BAT54-04W
BAT54-05
BAT54-05W
BAT54-06
BAT54-06W
BAT54W
1
*BAT54-02LRH
Package
SOT23
TSLP-2-7
SC79
SOD323
SOT23
SOT323
SOT23
SOT323
SOT23
SOT323
SOT323
Configuration
single
single
single
single
series
series
common cathode
common cathode
common anode
common anode
single
L
S
(nH)
1.8
0.4
0.6
1.8
1.8
1.4
1.8
1.4
1.8
1.4
1.4
Marking
T
54
b
blue 5
TS
TS
TC
TC
TA
TA
T5
is not qualified according AEC Q101
1
2011-06-29
BAT54...
Maximum Ratings
at
T
A
= 25°C, unless otherwise specified
Parameter
Diode reverse voltage
Forward current
Non-repetitive peak surge forward current
(
t
≤
10 ms)
Repetitive peak forward current
1)
t
p
≤
1 s,
δ
= 0.5
I
FRM
P
tot
Symbol
V
R
I
F
I
FSM
Value
30
200
600
300
Unit
V
mA
mA
mW
Total power dissipation
BAT54,
T
S
≤
94 °C
BAT54-02LRH,
T
S
≤
135 °C
BAT54-02V,
T
S
≤
126 °C
BAT54-03W,
T
S
≤
122 °C
BAT54-04,
T
S
≤
71 °C
BAT54-04W,
T
S
≤
117 °C
BAT54-05,
T
S
≤
48 °C
BAT54-05W,
T
S
≤
110 °C
BAT54-06,
T
S
≤
71 °C
BAT54-06W,
T
S
≤
117 °C
BAT54W,
T
S
≤
125 °C
Junction temperature
Storage temperature
1
Device
230
230
230
230
230
230
230
230
230
230
230
T
j
T
stg
150
-65 ... 150
°C
mounted on epoxy PCB 40 x 40 x 1.5 mm / 6 cm² Cu
2
2011-06-29
BAT54...
Thermal Resistance
Parameter
Junction - soldering point
1)
BAT54
BAT54-02LRH
BAT54-02V
BAT54-03W
BAT54-04
BAT54-04W
BAT54-05
BAT54-05W
BAT54-06
BAT54-06W
BAT54W
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Parameter
DC Characteristics
Breakdown voltage
2)
I
(BR)
= 10 µA
V
(BR)
I
R
V
F
Symbol
R
thJS
Value
≤
245
≤
65
≤
105
≤
120
≤
345
≤
145
≤
445
≤
175
≤
345
≤
145
≤
110
Unit
Symbol
min.
30
-
Values
typ.
-
-
max.
-
2
Unit
V
µA
mV
Reverse current
2)
V
R
= 25 V
Forward voltage
2)
I
F
= 0.1 mA
I
F
= 1 mA
I
F
= 10 mA
I
F
= 30 mA
I
F
= 100 mA
1
For
-
-
-
-
-
-
-
-
-
-
240
320
400
500
800
calculation of
R
thJA
please refer to Application Note Thermal Resistance
test:
t
p
= 300 µs; D = 0.01
2
Pulsed
3
2011-06-29
BAT54...
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Symbol
Values
Parameter
min.
AC Characteristics
Diode capacitance
V
R
= 1 V,
f
= 1 MHz
Reverse recovery time
I
F
= 10 mA,
I
R
= 10 mA, measured
I
R
= 1 mA ,
R
L
= 100
Ω
t
rr
-
-
5
ns
C
T
-
-
10
pF
typ.
max.
Unit
4
2011-06-29
BAT54...
Diode capacitance
C
T
=
ƒ
(V
R
)
f
= 1MHz
10
pF
Reverse current
I
R
=
ƒ
(T
A
)
V
R
= Parameter
10
3
µA
8
7
10
2
IR(25V)
C
T
6
5
4
3
2
1
0
0
I
R
10
1
IR(5V)
10
0
5
10
15
20
V
30
10
-1
25
50
75
°C
125
V
R
T
A
Reverse current
I
R
=
ƒ(V
R
)
T
A
= Parameter
10
3
µA
125°C
Forward Voltage
V
F
=
ƒ
(T
A
)
I
F
= Parameter
0.5
V
30mA
10
2
V
F
I
R
85°C
0.3
10mA
10
1
0.2
1mA
0.1mA
10
0
0.1
25°C
10
-1
0
5
10
15
20
V
30
0
-50
-25
0
25
50
75
°C
125
V
R
T
A
5
2011-06-29
