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BAV100

Rectifier Diode, 1 Element, 0.2A, 60V V(RRM), Silicon, MELF-2

器件类别:分立半导体    二极管   

厂商名称:FORMOSA

厂商官网:http://www.formosams.com/

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器件参数
参数名称
属性值
厂商名称
FORMOSA
包装说明
MELF-2
Reach Compliance Code
unknown
ECCN代码
EAR99
Is Samacsys
N
外壳连接
ISOLATED
配置
SINGLE
二极管元件材料
SILICON
二极管类型
RECTIFIER DIODE
JESD-30 代码
O-LELF-R2
元件数量
1
端子数量
2
最高工作温度
150 °C
最低工作温度
-55 °C
最大输出电流
0.2 A
封装主体材料
GLASS
封装形状
ROUND
封装形式
LONG FORM
最大功率耗散
0.5 W
最大重复峰值反向电压
60 V
最大反向恢复时间
0.05 µs
表面贴装
YES
端子形式
WRAP AROUND
端子位置
END
Base Number Matches
1
文档预览
Glass Sealed SMD Switching Diode
BAV100 THRU BAV103
List
Formosa MS
List................................................................................................. 1
Package outline............................................................................... 2
Features.......................................................................................... 2
Mechanical data............................................................................... 2
Maximum ratings ............................................................................. 2
Rating and characteristic curves........................................................ 3
Pinning information........................................................................... 4
Suggested solder pad layout............................................................. 4
Packing information.......................................................................... 5
Reel packing.................................................................................... 6
Suggested thermal profiles for soldering processes............................. 6
High reliability test capabilities........................................................... 7
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Document ID
Issued Date
2009/02/10
Revised Date
2010/02/10
Revision
B
Page.
7
Page 1
DS-221926
Glass Sealed SMD Switching Diode
BAV100 THRU BAV103
500mW Surface Mount
Switching Diode-60-250V
Features
Fast speed switching.
Silicon epitaxial planar chip structruction.
Hermetically sealed glass.
Small surface mounting type.
Lead-free parts meet RoHS requirments.
.146(3.7)
.130(3.3)
.019(.48)
.011(.28)
Formosa MS
SOD-80
Package outline
SOLDERABLE
ENDS
.063(1.6)
.055(1.4)
Mechanical data
Case : GLASS MINI-MELF / SOD-80
Terminals : Solder plated, solderable per
MIL-STD-750, Method 2026
Polarity : Indicated by cathode band
Mounting Position : Any
Weight : Approximated 0.03 gram
Dimensions in inches and (millimeters)
Maximum ratings and Electrical Characteristics
(AT
PARAMETER
CONDITIONS
TYPE
BAV100
BAV101
BAV102
BAV103
BAV100
BAV101
BAV102
BAV103
t
p
= 1 s
T
A
=25
o
C unless otherwise noted)
Symbol
Min.
Typ.
Max.
60
120
200
250
50
100
150
200
1000
250
200
500
-55
-65
+150
+150
625
1.00
100
15
100
15
100
15
100
15
1.5
50
5
500
UNIT
Repetitive peak reverse voltage
V
RRM
V
Reverse voltage
V
R
I
FSM
I
F
I
FAV
P
V
T
J
T
STG
I
FRM
V
mA
mA
mA
mW
o
Peak forward surge current
Forward DC current
Average forward current
Power dissipation
Junction temperature
Storage temperature
Repetitive peak forward current
Forward voltage
C
C
o
mA
V
nA
µA
nA
µA
nA
µA
nA
µA
pF
ns
Ω
K/W
I
F
= 100 mA
V
R
= 50 V
o
V
R
= 50 V , T
J
= 100 C
V
R
= 100 V
o
V
R
= 100 V , T
J
= 100 C
V
R
= 150 V
o
V
R
= 150 V , T
J
= 100 C
V
R
= 200 V
o
V
R
= 200 V , T
J
= 100 C
V
R
= 0 V , f = 1MHz
I
F
= 30 mA , I
RR
= 3mA , R
L
= 100Ω
I
F
= 10mA
on PC board 50mm*50mm*1.6mm
BAV100
BAV100
BAV101
BAV101
BAV102
BAV102
BAV103
BAV103
V
F
Reverse current
I
R
Diode capacitance
Reverse recovery time
Dynamic forward resistance
Junction ambient
C
D
t
rr
r
f
R
thJA
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Document ID
Issued Date
2009/02/10
Revised Date
2010/02/10
Revision
B
Page.
7
Page 2
DS-221926
Rating and characteristic curves (BAV100 THRU BAV103)
FIG.1-MAXIMUM PERMISSIBLE CONTINUOUS
FORWARD CURRENT VS. AMBIENT TEMPERATURE
300
FIG.2 - FORWARD CURRENT VS. FORWARD VOLTAGE
600
T
J
= 25 C
typical values
T
J
= 150
O
C
typical values
O
200
400
I
F
(mA)
I
F
(mA)
T
J
= 25 C
maximum values
O
100
200
0
0
100
200
O
0
0
1
2
Tamb( C)
V
F
(V)
10
3
FIG.3 - REVERSE CURRENT VS.
JUNCTION TEMPERATURE
FIG.4 - DIODE CAPACITANCE VS. REVERSE VOLTAGE
(TYPICAL VALUES)
1.8
T
J
= 25 C
f = 1MHz
O
REVERSE CURRENT, (uA)
10
2
maximum values
1.4
10
C
d
(pF)
1.2
1
typical values
1.0
10
-1
V
R
= V
Rmax
10
-2
0.8
0
100
JUNCTION TEMPERATURE ( C)
o
200
0
10
20
V
R
(V)
FIG.5 - MAXIMUM PERMISSIBLECONTINUOUS
REVERSE VOLTAGE VS. AMBIENT TEMPERATURE
300
200
BAV103
V
R
(V)
BAV102
100
BAV101
BAV100
0
0
100
200
Tamb( C)
O
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Document ID
Issued Date
2009/02/10
Revised Date
2010/02/10
Revision
B
Page.
7
Page 3
DS-221926
Glass Sealed SMD Switching Diode
BAV100 THRU BAV103
Formosa MS
Pinning information
Pin
Pin1
Pin2
cathode
anode
Simplified outline
Symbol
1
2
1
2
Suggested solder pad layout
C
A
B
Dimensions in inches and (millimeters)
PACKAGE
SOD-80
A
0.071(1.80)
B
0.035(0.90)
C
0.102(2.60)
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Document ID
Issued Date
2009/02/10
Revised Date
2010/02/10
Revision
B
Page.
7
Page 4
DS-221926
Glass Sealed SMD Switching Diode
BAV100 THRU BAV103
Packing information
P
0
P
1
d
E
F
B
W
Formosa MS
A
P
D
2
T
C
D
W
1
D
1
unit:mm
Item
Symbol
Tolerance
SOD-80
Carrier width
Carrier length
Carrier depth
Sprocket hole
7" Reel outside diameter
7" Reel inner diameter
Feed hole diameter
Sprocket hole position
Punch hole position
Punch hole pitch
Sprocket hole pitch
Embossment center
Overall tape thickness
Tape width
Reel width
A
B
C
d
D
D
1
D
2
E
F
P
P
0
P
1
T
W
W
1
0.1
0.1
0.1
0.1
2.0
min
0.5
0.1
0.1
0.1
0.1
0.1
0.1
0.3
1.0
2.00
3.70
1.80
1.50
178.00
50.00
13.00
1.75
3.50
4.00
4.00
2.00
0.23
8.00
11.40
Note:Devices are packed in accor dance with EIA standar RS-481-A and specifications listed above.
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Document ID
Issued Date
2009/02/10
Revised Date
2010/02/10
Revision
B
Page.
7
Page 5
DS-221926
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