BAV19 ~ BAV21
FEATURES :
• switching speed: max. 50 ns
• For general purpose
• This diode is also available in other case styles
including: the the MiniMELF case with the type
designation BAV101 to BAV103, the SOT-23 case
with the type designation BAS19 to BAS21
* Pb / RoHS Free
SWITCHING DIODES
DO - 35 Glass
(DO-204AH)
0.079(2.0 )max.
1.00 (25.4)
min.
Cathode
Mark
0.150 (3.8)
max.
MECHANICAL DATA :
Case:
DO-35 Glass Case
Weight:
approx. 0.13g
0.020 (0.52)max.
1.00 (25.4)
min.
Dimensions in inches and ( millimeters )
Maximum Ratings and Thermal Characteristics
(Rating at
Parameter
Maximum Repetitive Peak Reverse Voltage
BAV19
BAV20
BAV21
BAV19
BAV20
BAV21
25
°
C ambient temperature unless otherwise specified.)
Symbol
V
RRM
Value
120
200
250
100
150
200
200
250
500
625
1.0
175
-65 to + 175
Unit
V
Maximum Continuous Reverse Voltage
Maximum Rectified Current (Average)
Half Wave Rectification with Resist. Load
Maximum Continuous Current
Maximum Power Dissipation
(1)
(1)
(1)
V
RM
I
F(AV)
I
F
P
D
I
FRM
I
FSM
T
J
T
S
V
mA
mA
mW
mA
A
°C
°C
Maximum Repetitive Peak Forward Current
(1)
Maximum Non-repetitive Peak Forward Current at t = 1s
Maximum Junction Temperature
Storage Temperature Range
(1)
Note :
(1) Valid provided that leads are kept at ambient temperature at a distance of 8mm from case.
Electrical Characteristics
(T
J
= 25°C unless otherwise noted)
Parameter
Reverse Current
Forward Voltage
Diode Capacitance
Reverse Recovery Time
BAV19
BAV20
BAV21
Symbol
I
R
V
F
Cd
Trr
Test Condition
V
R
= 100 V
V
R
= 150 V
V
R
= 200 V
I
F
= 100 mA
f = 1MHz ; V
R
= 0
I
F
= 30mA , I
R
= 30mA
I
RR
= 3mA , R
L
= 100
Ω
Min.
-
-
-
-
-
-
Typ.
-
-
-
-
1.5
-
Max.
100
100
100
1.0
-
50
Unit
nA
V
pF
ns
Page 1 of 2
Rev. 02 : March 25, 2005
RATING AND CHARACTERISTIC CURVES ( BAV19 ~ BAV21 )
FIG. 1 ADMISSIBLE FORWARD CURRENT
VERSUS AMBIENT TEMPERATURE
FIG. 2 TYPICAL FORWARD VOLTAGE
250
1000
FORWARD OUTPUT CURRENT, mA
200
Forward Current , I
F
(mA)
Continuous
Current, I
F
100
150
10
100
Average
Current, I
(AV)
1
T
J
= 25
°
C
50
0.1
0
0
100
200
0.01
0
0.4
0.8
1.2
1.4
Ambient Temperature , Ta (°C)
Forward Voltage , V
F
(V)
FIG. 3 TYPICAL DIODE CAPACITANCE AS
A FUNCTION OF REVERSE VOLTAGE
FIG. 4 TYPICAL REVERESE CURRENT
VERSUS JUNCTION TEMPERATURE
1.6
10
3
1.5
V
R
= V
Rmax
Diode Capacitance , Cd (pF)
1.4
1.3
f = 1MHz;
T
J
= 25
°
C
Reverse Current , I
R
(
µ
A)
20
10
2
10
1.2
1
1.1
10
-1
1.0
0.9
0
10
10
-2
0
100
200
Reverse Voltage , V
R
(V)
Junction Temperature , Ta (°C)
Page 2 of 2
Rev. 02 : March 25, 2005
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