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BAV20W_15

SILICON EPITAXIAL PLANAR DIODE

厂商名称:UNISONIC TECHNOLOGIES CO.,LTD

厂商官网:http://www.unisonic.com.tw/

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UNISONIC TECHNOLOGIES CO., LTD
BAV20W
Preliminary
DIODE
SILICON EPITAXIAL PLANAR
DIODE
2
SOD-123
1
DESCRIPTION
1
2
SOD-323
The UTC
BAV20W
is a silicon epitaxial planar diode. The UTC
BAV20W
is suitable for general purpose application.
FEATURES
* Planar diode
* For general purpose application
* Low leakage current
ORDERING INFORMATION
Ordering Number
Package
SOD-123
SOD-323
Pin Assignment
1
2
K
A
K
A
Packing
Tape Reel
Tape Reel
BAV20WG-CA2-R
BAV20WG-CB2-R
Note: Pin Assignment: A: Anode
K: Cathode
BAV20WG-CA2-R
(1)Packing Type
(2)Package Type
(3)Green Package
(1) R: Tape Reel
(2) CA2: SOD-123, CB2: SOD-323
(3) G: Halogen Free and Lead Free
MARKING
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
1 of 3
QW-R601-205.b
BAV20W
ABSOLUTE MAXIMUM RATINGS
Preliminary
DIODE
PARAMETER
SYMBOL
RATINGS
UNIT
Repetitive Peak Reverse Voltage
V
RRM
200
V
Continuous Reverse Voltage
V
R
150
V
Forward DC Current at T
A
=25°C (Note 2)
I
F
250
mA
Rectified Current (Average) Half Wave Rectification with
I
O
200
mA
Resist. Load at T
A
=25°C (Note 2)
Repetitive Peak Forward Current at f>50Hz, T
A
=25°C
I
FRM
625
mA
(Note 2)
Surge Forward Current at t<1s, T
J
=25°C
I
FSM
1.0
A
Power Dissipation at T
A
=25°C (Note 2)
P
D
410
mW
Junction Temperature
T
J
-55~+150
°C
Storage Temperature
T
STG
-55~+150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Valid provided that leads are kept at ambient temperature.
THERMAL DATA
PARAMETER
SYMBOL
θ
JA
RATINGS
200
UNIT
°C/W
Junction to Ambient
ELECTRICAL CHARACTERISTICS
(T
A
=25°C, unless otherwise specified)
PARAMETER
SYMBOL
V
F
I
R
R
F
t
rr
C
T
TEST CONDITIONS
MIN
I
F
=100mA
I
F
=200mA
V
R
=150V
V
R
=150V, T
J
=100°C
I
F
=10mA
I
F
=30mA, I
R
=30mA, Irr=3.0mA,
R
L
=100Ω
V
R
=0 , f=1.0MHz
TYP MAX UNIT
1.00
V
1.25
V
100 nA
15
μA
5.0
50
1.5
ns
pF
Forward Voltage
Leakage Current
Dynamic Forward Resistance
Reverse Recovery Time
Capacitance Between Terminals
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 3
QW-R601-205.b
BAV20W
Preliminary
DIODE
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 3
QW-R601-205.b
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参数对比
与BAV20W_15相近的元器件有:BAV20WG-CB2-R。描述及对比如下:
型号 BAV20W_15 BAV20WG-CB2-R
描述 SILICON EPITAXIAL PLANAR DIODE SILICON EPITAXIAL PLANAR DIODE
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