BAV19WS, BAV20WS, BAV21WS
www.vishay.com
Vishay Semiconductors
Small Signal Switching Diodes, High Voltage
FEATURES
• Silicon epitaxial planar diodes
• For general purpose
• AEC-Q101 qualified available
• Base P/N-E3 - RoHS-compliant, commercial
grade
DESIGN SUPPORT TOOLS
click logo to get started
Models
Available
• Base P/N-HE3 - RoHS-compliant, AEC-Q101
qualified
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
MECHANICAL DATA
Case:
SOD-323
Weight:
approx. 4.3 mg
Packaging codes / options:
18/10K per 13" reel (8 mm tape), 10K/box
08/3K per 7" reel (8 mm tape), 15K/box
PARTS TABLE
PART
BAV19WS
BAV20WS
BAV21WS
TYPE
DIFFERENTIATION
V
R
= 100 V
V
R
= 150 V
V
R
= 200 V
ORDERING CODE
BAV19WS-E3-08 or BAV19WS-E3-18
BAV19WS-HE3-08 or BAV19WS-HE3-18
BAV20WS-E3-08 or BAV20WS-E3-18
BAV20WS-HE3-08 or BAV20WS-HE3-18
BAV21WS-E3-08 or BAV21WS-E3-18
BAV21WS-HE3-08 or BAV21WS-HE3-18
TYPE MARKING
A8
A9
AA
CIRCUIT
CONFIGURATION
Single
Single
Single
REMARKS
Tape and reel
Tape and reel
Tape and reel
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Continuous reverse voltage
TEST CONDITION
PART
BAV19WS
BAV20WS
BAV21WS
BAV19WS
BAV20WS
BAV21WS
SYMBOL
V
R
V
R
V
R
V
RRM
V
RRM
V
RRM
I
F
I
F(AV)
f
≥
50 Hz,
θ
= 180°
t < 1 s, T
J
= 25 °C
I
FRM
I
FSM
P
tot
VALUE
100
150
200
120
200
250
250
200
625
1
200
UNIT
V
V
V
V
V
V
mA
mA
mA
A
mW
Repetitive peak reverse voltage
Forward continuous current
(1)
Rectified current (average) half wave
rectification with resistive load
(1)
Repetitive peak forward current
(1)
Surge forward current
Power dissipation
Note
(1)
Valid provided that leads are kept at ambient temperature
THERMAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Thermal resistance junction to ambient air
Thermal resistance junction to lead
Junction temperature
Storage temperature range
Operating temperature range
TEST CONDITION
SYMBOL
R
thJA
R
thJL
T
j
T
stg
T
op
VALUE
625
450
150
-65 to +150
-55 to +150
UNIT
K/W
K/W
°C
°C
°C
Rev. 2.2, 12-Jul-17
Document Number: 85726
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
BAV19WS, BAV20WS, BAV21WS
www.vishay.com
Vishay Semiconductors
TEST CONDITION
I
F
= 100 mA
I
F
= 200 mA
V
R
= 100 V
BAV19WS
BAV19WS
BAV20WS
BAV20WS
BAV21WS
BAV21WS
PART
SYMBOL
V
F
V
F
I
R
I
R
I
R
I
R
I
R
I
R
r
f
C
D
t
rr
5
1.5
50
MIN.
TYP.
MAX.
1
1.25
100
15
100
15
100
15
UNIT
V
V
nA
μA
nA
μA
nA
μA
Ω
pF
ns
ELECTRICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Forward voltage
V
R
= 100 V, T
J
= 100 °C
Reverse leakage current
V
R
= 150 V
V
R
= 150 V, T
J
= 100 °C
V
R
= 200 V
V
R
= 200 V, T
J
= 100 °C
Dynamic forward resistance
Diode capacitance
Reverse recovery time
I
F
= 10 mA
V
R
= 0, f = 1 MHz
I
F
= 30 mA, I
R
= 30 mA,
i
R
= 3 mA, R
L
= 100
Ω
TYPICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
P
tot
- Admissible Power Dissipation (mW)
1000
250
200
150
100
50
I
F
- Forward Current (mA)
100
T
j
= 100 °C
10
25 °C
1
0.1
0.01
0
18858
0.2
0.4
0.6
0.8
1
0
0
V
F
- Forward Voltage (V)
18864
20 40 60 80 100 120 140 160 180 200
T
amb
- Ambient Temperature (°C)
Fig. 1 - Forward Current vs. Forward Voltage
Fig. 3 - Admissible Power Dissipation vs. Ambient Temperature
I
O
, I
F
- Admissible Forward Current (A)
0.2
DC current I
F
Current (rectif.) I
O
0.1
r
f
- Dynamic Forward Resistance
(Ω)
0.3
100
10
0
0
30
60
90
120
150
1
1
18861
10
100
18859
T
amb
- Ambient Temperature (°C)
I
F
- Forward Current (mA)
Fig. 2 - Admissible Forward Current vs. Ambient Temperature
Fig. 4 - Dynamic Forward Resistance vs. Forward Current
Rev. 2.2, 12-Jul-17
Document Number: 85726
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
BAV19WS, BAV20WS, BAV21WS
www.vishay.com
Vishay Semiconductors
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0.1
18863
1000
I
R
(T
j
)/I
R
(25 °C) - Leakage Current
100
10
Reverse Voltage
BAV19WS V
R
= 100 V
BAV20WS V
R
= 150 V
BAV21WS V
R
= 200 V
40
80
120
160
T
j
- Junction Temperature (°C)
200
1
0.1
0
18862_3
C
D
- Diode Capacitance (pF)
T
j
= 25
°
C
1
10
100
V
R
- Reverse Voltage (V)
Fig. 5 - Leakage Current vs. Junction Temperature
Fig. 6 - Capacitance vs. Reverse Voltage
PACKAGE DIMENSIONS
in millimeters (inches):
SOD-323
1.15 [0.045]
0.8 [0.031]
0.2 [0.008]
0.1 [0.004] max.
1.1 [0.043]
0.15 [0.006]
0.25 [0.010]
1.95 [0.077]
Cathode bar
1.60 [0.063]
0.40 [0.016]
0.20 [0.008]
2.85 [0.112]
2.50 [0.098]
Footprint recommendation:
0.8 [0.031]
1.5 [0.059]
0° - 8°
0.40 [0.016]
0.10 [0.004]
0.8 [0.031]
1.6 [0.063]
Document no.:
S8-V-3910.02-001
(4)
Created - Date: 24.August.2004
Rev. 6 - Date: 23.Sept.2016
17443
Rev. 2.2, 12-Jul-17
Document Number: 85726
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
0.6 [0.024]
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www.vishay.com
Vishay
Disclaimer
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
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Revision: 01-Jan-2019
1
Document Number: 91000