DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D088
BAV70
High-speed double diode
Product specification
Supersedes data of 1997 Nov 24
1999 May 05
Philips Semiconductors
Product specification
High-speed double diode
FEATURES
•
Small plastic SMD package
•
High switching speed: max. 4 ns
•
Continuous reverse voltage:
max. 70 V
•
Repetitive peak reverse voltage:
max. 75 V
•
Repetitive peak forward current:
max. 450 mA.
handbook, halfpage
BAV70
PINNING
PIN
1
2
3
DESCRIPTION
anode (a1)
anode (a2)
common cathode
DESCRIPTION
The BAV70 consists of two
high-speed switching diodes with
common cathodes, fabricated in
planar technology, and encapsulated
in the small SOT23 plastic SMD
package.
3
3
APPLICATIONS
•
High-speed switching in thick and
thin-film circuits.
1
Top view
2
MAM383
1
2
Marking code:
A4p = made in Hong Kong. A4t = made in Malaysia.
Fig.1 Simplified outline (SOT23) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
Per diode
V
RRM
V
R
I
F
repetitive peak reverse voltage
continuous reverse voltage
continuous forward current
single diode loaded; note 1;
see Fig.2
double diode loaded; note 1;
see Fig.2
I
FRM
I
FSM
repetitive peak forward current
non-repetitive peak forward current
square wave; T
j
= 25
°C
prior to
surge; see Fig.4
t = 1
µs
t = 1 ms
t=1s
P
tot
T
stg
T
j
Note
1. Device mounted on an FR4 printed-circuit board.
total power dissipation
storage temperature
junction temperature
T
amb
= 25
°C;
note 1
−
−
−
−
−65
−
4
1
0.5
250
+150
150
A
A
A
mW
°C
°C
−
−
−
−
−
85
75
215
125
450
V
V
mA
mA
mA
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
1999 May 05
2
Philips Semiconductors
Product specification
High-speed double diode
ELECTRICAL CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
Per diode
V
F
forward voltage
see Fig.3
I
F
= 1 mA
I
F
= 10 mA
I
F
= 50 mA
I
F
= 150 mA
I
R
reverse current
see Fig.5
V
R
= 25 V
V
R
= 75 V
V
R
= 25 V; T
j
= 150
°C
V
R
= 75 V; T
j
= 150
°C
C
d
t
rr
diode capacitance
reverse recovery time
f = 1 MHz; V
R
= 0; see Fig.6
when switched from I
F
= 10 mA to
I
R
= 10 mA; R
L
= 100
Ω;
measured at I
R
= 1 mA; see Fig.7
when switched from I
F
= 10 mA;
t
r
= 20 ns; see Fig.8
30
2.5
60
100
1.5
4
715
855
1
1.25
PARAMETER
CONDITIONS
MAX.
BAV70
UNIT
mV
mV
V
V
nA
µA
µA
µA
pF
ns
V
fr
forward recovery voltage
1.75
V
THERMAL CHARACTERISTICS
SYMBOL
R
th j-tp
R
th j-a
Note
1. Device mounted on an FR4 printed-circuit board.
PARAMETER
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
note 1
CONDITIONS
VALUE
360
500
UNIT
K/W
K/W
1999 May 05
3
Philips Semiconductors
Product specification
High-speed double diode
GRAPHICAL DATA
BAV70
300
IF
(mA)
200
MBD033
handbook, halfpage
300
MBG382
IF
(mA)
(1)
(2)
(3)
single diode loaded
200
double diode loaded
100
100
0
0
100
T amb ( C)
o
0
200
0
1
VF (V)
2
Device mounted on an FR4 printed-circuit board.
(1) T
j
= 150
°C;
typical values.
(2) T
j
= 25
°C;
typical values.
(3) T
j
= 25
°C;
maximum values.
Fig.2
Maximum permissible continuous forward
current as a function of ambient
temperature.
Fig.3
Forward current as a function of forward
voltage.
10
2
handbook, full pagewidth
IFSM
(A)
MBG704
10
1
10
−1
1
Based on square wave currents.
T
j
= 25
°C
prior to surge.
10
10
2
10
3
tp (µs)
10
4
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
1999 May 05
4
Philips Semiconductors
Product specification
High-speed double diode
BAV70
10
2
IR
(
µ
A)
10
VR = 75 V
max
1
75 V
MGA885
handbook, halfpage
0.8
MBG446
Cd
(pF)
0.6
0.4
10
1
25 V
0.2
typ
10
2
0
typ
100
0
T j ( o C)
200
0
4
8
12
VR (V)
16
f = 1 MHz; T
j
= 25
°C.
Fig.5
Reverse current as a function of junction
temperature.
Fig.6
Diode capacitance as a function of reverse
voltage; typical values.
1999 May 05
5
