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BAV70E6327

Rectifier Diode, 2 Element, 0.2A, 80V V(RRM), Silicon, SOT-23, 3 PIN

器件类别:分立半导体    二极管   

厂商名称:Infineon(英飞凌)

厂商官网:http://www.infineon.com/

器件标准:

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器件参数
参数名称
属性值
是否无铅
不含铅
是否Rohs认证
符合
厂商名称
Infineon(英飞凌)
零件包装代码
SOT-23
包装说明
R-PDSO-G3
针数
3
Reach Compliance Code
compliant
ECCN代码
EAR99
Factory Lead Time
1 week
配置
COMMON CATHODE, 2 ELEMENTS
二极管元件材料
SILICON
二极管类型
RECTIFIER DIODE
最大正向电压 (VF)
0.715 V
JESD-30 代码
R-PDSO-G3
JESD-609代码
e3
湿度敏感等级
1
最大非重复峰值正向电流
4.5 A
元件数量
2
端子数量
3
最高工作温度
150 °C
最大输出电流
0.2 A
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
峰值回流温度(摄氏度)
260
最大功率耗散
0.25 W
认证状态
Not Qualified
最大重复峰值反向电压
80 V
最大反向恢复时间
0.004 µs
表面贴装
YES
端子面层
Tin (Sn)
端子形式
GULL WING
端子位置
DUAL
处于峰值回流温度下的最长时间
40
Base Number Matches
1
文档预览
BAV70...
Silicon Switching Diode
For high-speed switching applications
Common cathode configuration
BAV70S / U: For orientation in reel see
package information below
Pb-free (RoHS compliant) package
1)
Qualified according AEC Q101
BAV70
BAV70W
!
BAV70S
BAV70U
$
#
, "
"
, !
, 
,
, 
,


!
Type
BAV70
BAV70S
BAV70U
BAV70W
1
Pb-containing
Package
SOT23
SOT363
SC74
SOT323
Configuration
common cathode
double common cathode
double common cathode
common cathode
Marking
A4s
A4s
A4s
A4s
package may be available upon special request
1
2007-09-19
BAV70...
Maximum Ratings
at
T
A
= 25°C, unless otherwise specified
Parameter
Diode reverse voltage
Peak reverse voltage
Forward current
Non-repetitive peak surge forward current
t
= 1 µs
t
= 1 ms
t
= 1 s single
t
= 1 s double
Total power dissipation
BAV70,
T
S
33°C
BAV70S,
T
S
85°C
BAV70U,
T
S
90°C
BAV70W,
T
S
103°C
Junction temperature
Storage temperature
Thermal Resistance
Parameter
Junction - soldering point
1)
BAV70
BAV70S
BAV70U
BAV70W
1
For
Symbol
V
R
V
RM
I
F
I
FSM
Value
80
85
200
4.5
1
0.5
0.75
Unit
V
mA
A
P
tot
250
250
250
250
T
j
T
stg
Symbol
R
thJS
460
260
240
190
150
-65 ... 150
mW
°C
Value
Unit
K/W
calculation of
R
thJA
please refer to Application Note Thermal Resistance
2
2007-09-19
BAV70...
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ. max.
DC Characteristics
85
-
-
V
Breakdown voltage
V
(BR)
I
(BR)
= 100 µA
Reverse current
V
R
= 70 V
V
R
= 25 V,
T
A
= 150 °C
V
R
= 70 V,
T
A
= 150 °C
Forward voltage
I
F
= 1 mA
I
F
= 10 mA
I
F
= 50 mA
I
F
= 100 mA
I
F
= 150 mA
V
F
-
-
-
-
-
-
-
-
-
-
715
855
1000
1200
1250
I
R
-
-
-
-
-
-
0.15
30
50
mV
µA
AC Characteristics
Diode capacitance
V
R
= 0 V,
f
= 1 MHz
Reverse recovery time
I
F
= 10 mA,
I
R
= 10 mA, measured at
I
R
= 1mA ,
R
L
= 100
Test circuit for reverse recovery time
D.U.T.
C
T
t
rr
-
-
-
-
1.5
4
pF
ns
Pulse generator:
t
p
= 100ns,
D
= 0.05,
t
r
= 0.6ns,
R
i
= 50Ω
Oscillograph
Ι
F
Oscillograph:
R
= 50Ω,
t
r
= 0.35ns,
C
= 0.05pF
EHN00019
3
2007-09-19
BAV70...
Reverse current
I
R
=
ƒ
(T
A
)
V
R
= Parameter
10
5
nA
Forward Voltage
V
F
=
ƒ
(T
A
)
I
F
= Parameter
1.0
BAV 70
EHB00068
V
F
10
4
V
Ι
F
= 100 mA
I
R
10 mA
10
3
0.5
70 V
25 V
1 mA
0.1 mA
10
2
10
1
0
25
50
75
100
°C
150
0
0
50
100
˚C
T
A
150
T
A
Forward current
I
F
=
ƒ
(V
F
)
T
A
= 25°C
150
BAV 70
EHB00066
Forward current
I
F
=
ƒ
(T
S
)
BAV70
250
mA
Ι
F
mA
200
175
100
I
F
150
125
100
typ
max
50
75
50
25
0
0
0.5
1.0
V
V
F
1.5
0
0
15
30
45
60
75
90 105 120
°C
150
T
S
4
2007-09-19
BAV70...
Forward current
I
F
=
ƒ
(T
S
)
BAV70S
250
mA
Forward current
I
F
=
ƒ
(T
S
)
BAV70U
250
mA
200
175
200
175
I
F
150
125
100
75
50
25
0
0
I
F
90 105 120
°C
150
125
100
75
50
25
0
0
15
30
45
60
75
150
15
30
45
60
75
90 105 120
°C
150
T
S
T
S
Forward current
I
F
=
ƒ
(T
S
)
BAV70W
250
Permissible Puls Load
R
thJS
=
ƒ
(t
p
)
BAV70
10
3
mA
200
10
2
150
125
100
75
R
thJS
10
1
175
I
F
10
0
50
25
0
0
10
-1 -7
10
-6
-5
-4
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0
15
30
45
60
75
90 105 120
°C
150
T
S
10
10
10
10
-3
10
-2
s
10
0
T
P
5
2007-09-19
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参数对比
与BAV70E6327相近的元器件有:BAV70E6433、BAV70SE6327、BAV70WH6433、BAV70WE6433、BAV70WE6327、BAV70WH6327。描述及对比如下:
型号 BAV70E6327 BAV70E6433 BAV70SE6327 BAV70WH6433 BAV70WE6433 BAV70WE6327 BAV70WH6327
描述 Rectifier Diode, 2 Element, 0.2A, 80V V(RRM), Silicon, SOT-23, 3 PIN Rectifier Diode, 2 Element, 0.2A, 70V V(RRM), Silicon, SOT-23, 3 PIN Rectifier Diode, 4 Element, 0.2A, 80V V(RRM), Silicon, SOT-363, 6 PIN Rectifier Diode, 2 Element, 0.2A, 80V V(RRM), Silicon, Rectifier Diode, 2 Element, 0.2A, 80V V(RRM), Silicon Rectifier Diode, 2 Element, 0.2A, 80V V(RRM), Silicon, SOT-323, 3 PIN Rectifier Diode, 2 Element, 0.2A, 80V V(RRM), Silicon, ROHS COMPLIANT PACKAGE-3
厂商名称 Infineon(英飞凌) Infineon(英飞凌) Infineon(英飞凌) Infineon(英飞凌) Infineon(英飞凌) Infineon(英飞凌) Infineon(英飞凌)
包装说明 R-PDSO-G3 R-PDSO-G3 R-PDSO-G6 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3
Reach Compliance Code compliant compliant compliant unknown compliant compliant compliant
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
配置 COMMON CATHODE, 2 ELEMENTS COMMON CATHODE, 2 ELEMENTS 2 BANKS, COMMON CATHODE, 2 ELEMENTS COMMON CATHODE, 2 ELEMENTS COMMON CATHODE, 2 ELEMENTS COMMON CATHODE, 2 ELEMENTS COMMON CATHODE, 2 ELEMENTS
二极管元件材料 SILICON SILICON SILICON SILICON SILICON SILICON SILICON
二极管类型 RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
JESD-30 代码 R-PDSO-G3 R-PDSO-G3 R-PDSO-G6 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3
元件数量 2 2 4 2 2 2 2
端子数量 3 3 6 3 3 3 3
最大输出电流 0.2 A 0.2 A 0.2 A 0.2 A 0.2 A 0.2 A 0.2 A
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
最大功率耗散 0.25 W 0.25 W 0.25 W 0.25 W 0.25 W 0.25 W 0.25 W
最大重复峰值反向电压 80 V 70 V 80 V 80 V 80 V 80 V 80 V
最大反向恢复时间 0.004 µs 0.006 µs 0.004 µs 0.006 µs 0.006 µs 0.004 µs 0.004 µs
表面贴装 YES YES YES YES YES YES YES
端子形式 GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING
端子位置 DUAL DUAL DUAL DUAL DUAL DUAL DUAL
Base Number Matches 1 1 1 1 1 1 1
是否无铅 不含铅 不含铅 - - 不含铅 不含铅 不含铅
是否Rohs认证 符合 符合 符合 - 符合 符合 符合
零件包装代码 SOT-23 SOT-23 SOT-363 - - SC-70 -
针数 3 3 6 - - 3 3
最大正向电压 (VF) 0.715 V 0.715 V 0.715 V - 0.715 V 0.715 V -
JESD-609代码 e3 e3 e3 - e3 e3 e3
湿度敏感等级 1 1 1 - 1 1 -
最大非重复峰值正向电流 4.5 A 4.5 A - - 4.5 A 4.5 A -
最高工作温度 150 °C 150 °C 150 °C - 150 °C 150 °C 150 °C
峰值回流温度(摄氏度) 260 260 260 - 260 260 260
认证状态 Not Qualified Not Qualified Not Qualified - Not Qualified Not Qualified -
端子面层 Tin (Sn) MATTE TIN MATTE TIN - MATTE TIN MATTE TIN MATTE TIN
处于峰值回流温度下的最长时间 40 40 40 - 40 40 40
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00 01 02 03 04 05 06 07 08 09 0A 0C 0F 0J 0L 0M 0R 0S 0T 0Z 10 11 12 13 14 15 16 17 18 19 1A 1B 1C 1D 1E 1F 1H 1K 1M 1N 1P 1S 1T 1V 1X 1Z 20 21 22 23 24 25 26 27 28 29 2A 2B 2C 2D 2E 2F 2G 2K 2M 2N 2P 2Q 2R 2S 2T 2W 2Z 30 31 32 33 34 35 36 37 38 39 3A 3B 3C 3D 3E 3F 3G 3H 3J 3K 3L 3M 3N 3P 3R 3S 3T 3V 40 41 42 43 44 45 46 47 48 49 4A 4B 4C 4D 4M 4N 4P 4S 4T 50 51 52 53 54 55 56 57 58 59 5A 5B 5C 5E 5G 5H 5K 5M 5N 5P 5S 5T 5V 60 61 62 63 64 65 66 67 68 69 6A 6C 6E 6F 6M 6N 6P 6R 6S 6T 70 71 72 73 74 75 76 77 78 79 7A 7B 7C 7M 7N 7P 7Q 7V 7W 7X 80 81 82 83 84 85 86 87 88 89 8A 8D 8E 8L 8N 8P 8S 8T 8W 8Y 8Z 90 91 92 93 94 95 96 97 98 99 9A 9B 9C 9D 9F 9G 9H 9L 9S 9T 9W
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