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BAV70T

Diodes - General Purpose, Power, Switching 150mW Fast Switching Diode

器件类别:分立半导体    二极管   

厂商名称:ON Semiconductor(安森美)

厂商官网:http://www.onsemi.cn

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器件参数
参数名称
属性值
Brand Name
ON Semiconductor
是否无铅
不含铅
厂商名称
ON Semiconductor(安森美)
包装说明
R-PDSO-G3
制造商包装代码
419BF
Reach Compliance Code
compliant
ECCN代码
EAR99
配置
COMMON CATHODE, 2 ELEMENTS
二极管元件材料
SILICON
二极管类型
RECTIFIER DIODE
JESD-30 代码
R-PDSO-G3
JESD-609代码
e3
湿度敏感等级
1
元件数量
2
端子数量
3
最高工作温度
125 °C
最大输出电流
0.15 A
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
峰值回流温度(摄氏度)
260
最大功率耗散
0.15 W
最大重复峰值反向电压
85 V
最大反向恢复时间
0.004 µs
表面贴装
YES
端子面层
Tin (Sn)
端子形式
GULL WING
端子位置
DUAL
处于峰值回流温度下的最长时间
NOT SPECIFIED
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BAW56T / BAV70T / BAV99T — Fast Switching Diode
August 2015
BAW56T / BAV70T / BAV99T
Fast Switching Diode
Features
Fast Switching Diodes with T
rr
< 4.0 nsec
Surface Mount Device at 0.95 mm Maximum Height
MSL 1 per J-STD-020
Pb Free and RoHS Compliant
Matte Sn Lead Finish
Green Mold Compound
3
3
3
SOT-523
1
BAW56T
2
1
BAV70T
2
1
BAV99T
2
Ordering Information
Part Number
BAW56T
BAV70T
BAV99T
Top Mark
JD
JJ
JE
Package
SOT-523 3L
SOT-523 3L
SOT-523 3L
Packing Method
Tape and Reel
Tape and Reel
Tape and Reel
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at T
A
= 25°C unless otherwise noted.
Symbol
V
RRM
I
F(AV)
T
J
T
STG
Parameter
Maximum Repetitive Reverse Voltage
Average Rectified Forward Current
Operating Junction Temperature
Storage Temperature Range
Single Diode
Dual Diodes
Value
85
150
75
125
-55 to +125
Unit
V
mA
°C
°C
© 2015 Fairchild Semiconductor Corporation
BAW56T / BAV70T / BAV99T Rev. 1.0
www.fairchildsemi.com
BAW56T / BAV70T / BAV99T — Fast Switching Diode
Thermal Characteristics
(1)
Values are at T
A
= 25°C unless otherwise noted.
Symbol
P
D
R
θJA
ψ
JL
Power Dissipation
Parameter
Thermal Resistance, Junction-to-Ambient
Junction-to-Lead Thermal Characteristics,
Thermocouple Soldered to Cathode
Value
150
500
195
Unit
mW
°C/W
°C/W
Note:
1. Device mounted on FR-4 PCB minimum land pad
Electrical Characteristics
Values are at T
A
= 25°C unless otherwise noted. Parameters are tested per individual diode.
Symbol
BV
R
I
R
Parameter
Reverse Breakdown Voltage
Reverse Leakage Current
I
R
= 1
μA
Conditions
V
R
= 75 V
V
R
= 25 V
I
F
= 1 mA
I
F
= 10 mA
I
F
= 50 mA
I
F
= 150 mA
V
R
= 0 V, f = 1 MHz
I
F
= I
R
= 10 mA, I
RR
= 0.1 x I
R
R
L
= 100
Ω
Min.
85
Max.
2
0.03
0.715
0.855
1.00
1.25
4
4
Unit
V
μA
V
F
Forward Voltage
V
C
D
T
rr
Diode Capacitance
Reverse Recovery Time
pF
ns
© 2015 Fairchild Semiconductor Corporation
BAW56T / BAV70T / BAV99T Rev. 1.0
www.fairchildsemi.com
2
BAW56T / BAV70T / BAV99T — Fast Switching Diode
Typical Performance Characteristics
1.2
10
5
I
R
- REVERSE CURRENT (nA)
V
F
- FORWARD VOLTAGE (V)
1.0
0.8
0.6
0.4
0.2
T
A
= 150 C
o
o
10
10
10
10
10
10
4
T
A
= 150 C
o
3
T
A
= -40 C
o
2
T
A
= 25 C
1
o
T
A
= 25 C
0
T
A
= - 40 C
o
-1
0.0
0.01
0.1
1
10
100
10
-2
10
20
30
40
50
60
70
80
90
100
I
F
- FORWARD CURRENT (mA)
V
R
- REVERSE VOLTAGE (V)
Figure 1. Forward Voltage vs. Forward Current
Figure 2. Reverse Current vs. Reverse Voltage
170
165
160
155
150
145
140
1
10
100
0.16
V
R
- REVERSE VOLTAGE (V)
P
D
- POWER DISSIPATION (W)
T
A
= 25 C
o
0.14
0.12
0.10
0.08
0.06
0.04
0.02
0.00
0
25
50
75
100
w.r.t. Cathode
125
o
150
I
R
- REVERSE CURRENT (
μ
A)
T
L
- LEAD TEMPERATURE ( C)
Figure 3. Reverse Voltage vs. Reverse Current
Figure 4. Power Derating Curve
2.0
C
J
- JUNCTION CAPACITANCE (pF)
1.8
1.6
1.4
1.2
1.0
BAW56T
BAV70T
0.8
0.6
0.4
0
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15
BAV99T
V
R
- REVERSE VOLTAGE (V)
Figure 5. Total Capacitance vs. Reverse Voltage
© 2015 Fairchild Semiconductor Corporation
BAW56T / BAV70T / BAV99T Rev. 1.0
www.fairchildsemi.com
3
BAW56T / BAV70T / BAV99T — Fast Switching Diode
Physical Dimensions
Figure 6. 3-Lead, SOT523
© 2015 Fairchild Semiconductor Corporation
BAW56T / BAV70T / BAV99T Rev. 1.0
www.fairchildsemi.com
4
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