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BAW56E8000

Rectifier Diode, 2 Element, 0.2A, 80V V(RRM), Silicon, SOT-23, 3 PIN

器件类别:分立半导体    二极管   

厂商名称:Infineon(英飞凌)

厂商官网:http://www.infineon.com/

器件标准:

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器件参数
参数名称
属性值
是否Rohs认证
符合
厂商名称
Infineon(英飞凌)
包装说明
SOT-23, 3 PIN
Reach Compliance Code
compliant
配置
COMMON ANODE, 2 ELEMENTS
二极管元件材料
SILICON
二极管类型
RECTIFIER DIODE
JESD-30 代码
R-PDSO-G3
湿度敏感等级
1
元件数量
2
端子数量
3
最大输出电流
0.2 A
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
峰值回流温度(摄氏度)
NOT SPECIFIED
最大功率耗散
0.33 W
最大重复峰值反向电压
80 V
最大反向恢复时间
0.004 µs
表面贴装
YES
端子形式
GULL WING
端子位置
DUAL
处于峰值回流温度下的最长时间
NOT SPECIFIED
Base Number Matches
1
文档预览
BAW56...
Silicon Switching Diode
For high-speed switching applications
Common anode configuration
BAW56S / U: For orientation in reel see
package information below
BAW56
BAW56T
BAW56W
!
BAW56S
BAW56U
$
#
, "
"
, !
, 
,
, 
,


!
Type
BAW56
BAW56S
BAW56T
BAW56U
BAW56W
Package
SOT23
SOT363
SC75
SC74
SOT323
Configuration
common anode
double common anode
common anode
double common anode
common anode
Marking
A1s
A1s
A1
A1s
A1s
1
2006-01-13
BAW56...
Maximum Ratings
at
T
A
= 25°C, unless otherwise specified
Parameter
Diode reverse voltage
Peak reverse voltage
Forward current
Non-repetitive peak surge forward current
t
= 1 µs
t
= 1 ms
t
= 1 s, single
t
= 1 s, double
Symbol
V
R
V
RM
I
F
I
FSM
Value
80
85
200
4.5
1
0.5
0.75
Unit
V
mA
A
Total power dissipation
BAW56,
T
S
28°C
BAW56S,
T
S
85°C
BAW56T,
T
S
104°C
BAW56U,
T
S
90°C
BAW56W,
T
S
103°C
Junction temperature
Storage temperature
Thermal Resistance
Parameter
Junction - soldering point
1)
BAW56
BAW56S
BAW56T
BAW56U
BAW56W
1
For
P
tot
mW
330
250
250
250
250
T
j
T
stg
150
-65 ... 150
°C
Symbol
R
thJS
Value
360
260
185
240
190
Unit
K/W
calculation of
R
thJA
please refer to Application Note Thermal Resistance
2
2006-01-13
BAW56...
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Symbol
Values
Parameter
min.
typ. max.
DC Characteristics
85
-
-
Breakdown voltage
V
(BR)
I
(BR)
= 100 µA
Reverse current
V
R
= 70 V
V
R
= 25 V,
T
A
= 150 °C
V
R
= 70 V,
T
A
= 150 °C
Forward voltage
I
F
= 1 mA
I
F
= 10 mA
I
F
= 50 mA
I
F
= 100 mA
I
F
= 150 mA
V
F
-
-
-
-
-
-
-
-
-
-
715
855
1000
1200
1250
I
R
-
-
-
-
-
-
0.15
30
50
mV
µA
Unit
V
AC Characteristics
Diode capacitance
V
R
= 0 V,
f
= 1 MHz
Reverse recovery time
I
F
= 10 mA,
I
R
= 10 mA, measured at
I
R
= 1mA,
R
L
= 100
Test circuit for reverse recovery time
D.U.T.
C
T
t
rr
-
-
-
-
2
4
pF
ns
Pulse generator:
t
p
= 100ns,
D
= 0.05,
t
r
= 0.6ns,
R
i
= 50Ω
Oscillograph
Ι
F
Oscillograph:
R
= 50Ω,
t
r
= 0.35ns,
C
1pF
EHN00019
3
2006-01-13
BAW56...
Reverse current
I
R
=
ƒ
(T
A
)
V
R
= Parameter
10
5
nA
Forward Voltage
V
F
=
ƒ
(T
A
)
I
F
= Parameter
1.2
1
10
4
0.9
V
F
10
3
0.8
0.7
0.6
0.5
I
R
70 V
25 V
10
2
0.4
0.3
0.2
0.1
IF = 150mA
IF = 100mA
IF = 50mA
IF = 10mA
IF = 1mA
IF = 0,1mA
10
1
0
25
50
75
100
°C
150
0
-40
-20
0
20
40
60
80
100
140
T
A
T
A
Forward current
I
F
=
ƒ
(V
F
)
T
A
= 25°C
150
BAW 56
EHB00091
Forward current
I
F
=
ƒ
(T
S
)
BAW56
250
mA
Ι
F
mA
200
175
100
I
F
150
125
100
typ
max
50
75
50
25
0
0
0.5
1.0
V
V
F
1.5
0
0
15
30
45
60
75
90 105 120
°C
150
T
S
4
2006-01-13
BAW56...
Forward current
I
F
=
ƒ
(T
S
)
BAW56S
Forward current
I
F
=
ƒ
(T
S
)
BAW56T
250
mA
250
mA
200
175
200
175
I
F
150
125
100
75
50
25
0
0
I
F
90 105 120
°C
Kei
150
150
125
100
75
50
25
0
0
15
30
45
60
75
15
30
45
60
75
90 105 120
°C
150
T
S
T
S
Forward current
I
F
=
ƒ
(T
S
)
BAW56U
Forward current
I
F
=
ƒ
(T
S
)
BAW56W
250
mA
250
mA
200
175
200
175
I
F
150
125
100
75
50
25
0
0
I
F
90 105 120
°C
150
125
100
75
50
25
0
0
15
30
45
60
75
150
15
30
45
60
75
90 105 120
°C
150
T
S
T
S
5
2006-01-13
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