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BAW76-TAP

Rectifier Diode, 1 Element, 0.15A, 75V V(RRM),

器件类别:分立半导体    二极管   

厂商名称:Vishay Telefunken (Vishay)

厂商官网:http://www.vishay.com

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器件参数
参数名称
属性值
是否Rohs认证
不符合
厂商名称
Vishay Telefunken (Vishay)
Reach Compliance Code
unknown
Is Samacsys
N
配置
SINGLE
二极管类型
RECTIFIER DIODE
最大正向电压 (VF)
1 V
JESD-609代码
e0
最大非重复峰值正向电流
2 A
元件数量
1
最高工作温度
200 °C
最大输出电流
0.15 A
最大重复峰值反向电压
75 V
表面贴装
NO
端子面层
Tin/Lead (Sn/Pb)
Base Number Matches
1
文档预览
BAW76
Vishay Telefunken
Switching Diode
Features
D
Silicon Epitaxial Planar Diode
Applications
94 9367
Extreme fast switches
Order Instruction
Type
BAW76
Type Differentiation
V
RRM
= 75 V
Ordering Code
BAW76–TAP
BAW76–TR
Remarks
Ammopack
Tape and Reel
Absolute Maximum Ratings
T
j
= 25
_
C
Parameter
Repetitive peak reverse voltage
Reverse voltage
Peak forward surge current
Repetitive peak forward current
Forward current
Average forward current
Power dissipation
Junction temperature
Storage temperature range
Test Conditions
Type
Symbol
V
RRM
V
R
I
FSM
I
FRM
I
F
I
FAV
P
V
P
V
T
j
T
stg
Value
75
50
2000
450
300
150
440
500
200
–65...+200
Unit
V
V
mA
mA
mA
mA
mW
mW
°
C
°
C
t
p
=1
m
s
V
R
=0
l=4 mm, T
L
=45
°
C
l=4 mm, T
L
25
°
C
x
Maximum Thermal Resistance
T
j
= 25
_
C
Parameter
Junction ambient
Test Conditions
l=4 mm, T
L
=constant
Symbol
R
thJA
Value
350
Unit
K/W
Document Number 85551
Rev. 3, 14-Feb-01
www.vishay.com
1 (3)
BAW76
Vishay Telefunken
Electrical Characteristics
T
j
= 25
_
C
Parameter
Forward voltage
Reverse current
Breakdown voltage
Diode capacitance
Reverse recovery time
Test Conditions
I
F
=100mA
V
R
=50 V
V
R
=50 V, T
j
=150
°
C
I
R
=5
m
A, t
p
/T=0.01, t
p
=0.3ms
V
R
=0, f=1MHz, V
HF
=50mV
I
F
=I
R
=10mA, i
R
=1mA
I
F
=10mA, V
R
=6V, i
R
=1mA, R
L
=100
Type
Symbol
V
F
I
R
I
R
V
(BR)
C
D
t
rr
t
rr
Min Typ
Max
1
100
100
2
4
2
Unit
V
nA
m
A
V
pF
ns
ns
75
1.7
W
Dimensions in mm
Cathode Identification
0.55 max.
technical drawings
according to DIN
specifications
94 9366
1.7 max.
Standard Glass Case
54 A 2 DIN 41880
JEDEC DO 35
Weight max. 0.3 g
26 min.
3.9 max.
26 min.
www.vishay.com
2 (3)
Document Number 85551
Rev. 3, 14-Feb-01
BAW76
Vishay Telefunken
Ozone Depleting Substances Policy Statement
It is the policy of
Vishay Semiconductor GmbH
to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances ( ODSs ).
The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH
has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency ( EPA ) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.
Vishay Semiconductor GmbH
can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
Document Number 85551
Rev. 3, 14-Feb-01
www.vishay.com
3 (3)
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参数对比
与BAW76-TAP相近的元器件有:BAW76-TR。描述及对比如下:
型号 BAW76-TAP BAW76-TR
描述 Rectifier Diode, 1 Element, 0.15A, 75V V(RRM), Rectifier Diode, 1 Element, 0.15A, 75V V(RRM),
是否Rohs认证 不符合 不符合
厂商名称 Vishay Telefunken (Vishay) Vishay Telefunken (Vishay)
Reach Compliance Code unknown unknown
配置 SINGLE SINGLE
二极管类型 RECTIFIER DIODE RECTIFIER DIODE
最大正向电压 (VF) 1 V 1 V
JESD-609代码 e0 e0
最大非重复峰值正向电流 2 A 2 A
元件数量 1 1
最高工作温度 200 °C 200 °C
最大输出电流 0.15 A 0.15 A
最大重复峰值反向电压 75 V 75 V
表面贴装 NO NO
端子面层 Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
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