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BB187T/R

DIODE VHF BAND, 29.3 pF, 32 V, SILICON, VARIABLE CAPACITANCE DIODE, ULTRA SMALL, PLASTIC, SC-79, 2 PIN, Variable Capacitance Diode

器件类别:二极管    变容二极管   

厂商名称:NXP(恩智浦)

厂商官网:https://www.nxp.com

器件标准:  

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器件参数
参数名称
属性值
是否无铅
不含铅
是否Rohs认证
符合
厂商名称
NXP(恩智浦)
零件包装代码
SC-79
包装说明
R-PDSO-F2
针数
2
Reach Compliance Code
unknown
ECCN代码
EAR99
Is Samacsys
N
其他特性
2% MATCHED SETS OF 10 DIODES ARE AVAILABLE
最小击穿电压
32 V
配置
SINGLE
最小二极管电容比
11
标称二极管电容
29.3 pF
二极管元件材料
SILICON
二极管类型
VARIABLE CAPACITANCE DIODE
频带
VERY HIGH FREQUENCY
JESD-30 代码
R-PDSO-F2
JESD-609代码
e3
元件数量
1
端子数量
2
最高工作温度
125 °C
最低工作温度
-55 °C
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
峰值回流温度(摄氏度)
260
认证状态
Not Qualified
表面贴装
YES
端子面层
TIN
端子形式
FLAT
端子位置
DUAL
处于峰值回流温度下的最长时间
40
Base Number Matches
1
文档预览
BB187
VHF variable capacitance diode
Rev. 04 — 3 November 2004
Product data sheet
1. Product profile
1.1 General description
The BB187 is a planar technology variable capacitance diode, in a SOD523 (SC-79) ultra
small plastic SMD package. The excellent matching performance is achieved by gliding
matching and a Direct Matching Assembly (DMA) procedure.
1.2 Features
s
s
s
s
s
High linearity
Excellent matching to 2 % DMA
Ultra small plastic SMD package
C
d(25V)
: 2.75 pF; C
d(2V)
to C
d(25V)
ratio: minimum 11
Low series resistance.
1.3 Applications
s
Electronic tuning in VHF television tuners
s
Voltage Controlled Oscillators (VCO).
2. Pinning information
Table 1:
Pin
1
2
Pinning
Description
cathode
anode
1
2
Simplified outline
[1]
Symbol
sym008
Top view
[1]
The marking bar indicates the cathode.
3. Ordering information
Table 2:
Ordering information
Package
Name
BB187
SC-79
Description
plastic surface mounted package; 2 leads
Version
SOD523
Type number
Philips Semiconductors
BB187
VHF variable capacitance diode
4. Marking
Table 3:
BB187
Marking
Marking code
X
Type number
5. Limiting values
Table 4:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
R
V
RM
I
F
T
stg
T
j
Parameter
reverse voltage
peak reverse voltage
forward current
storage temperature
junction temperature
in series with a
10 kΩ resistor
Conditions
Min
-
-
-
−55
−55
Max
32
35
20
+150
+125
Unit
V
V
mA
°C
°C
6. Characteristics
Table 5:
Characteristics
T
j
= 25
°
C unless otherwise specified.
Symbol
I
R
Parameter
reverse current
Conditions
see
Figure 2
V
R
= 30 V
V
R
= 30 V; T
j
= 85
°C
r
s
C
d
diode series
resistance
diode
capacitance
f = 470 MHz; V
R
= 5 V
f = 1 MHz; see
Figure 1
and
Figure 3
V
R
= 2 V
V
R
= 25 V
capacitance ratio f = 1 MHz
29.3
2.57
11
-
2.75
-
34.2
2.92
-
pF
pF
Min
-
-
-
-
Typ
-
-
-
-
10
200
0.75
nA
nA
Max
Unit
C
d
(
2V
)
------------------
-
C
d
(
25V
)
C
d
---------
-
C
d
capacitance
matching
V
R
= 2 V to 25 V; in a
sequence of 10 diodes
(gliding)
-
-
2
%
9397 750 13835
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 04 — 3 November 2004
2 of 7
Philips Semiconductors
BB187
VHF variable capacitance diode
50
C
d
(pF)
40
mcd781
30
20
10
0
10
−1
1
10
V
R
(V)
10
2
f = 1 MHz; T
j
= 25
°C.
Fig 1. Diode capacitance as a function of reverse voltage; typical values.
10
3
I
R
(nA)
10
2
10
−4
mlc816
10
−3
mlc815
TC
d
(K
−1
)
10
1
0
20
40
60
80
T
j
(°C)
100
10
−5
10
−1
1
10
V
R
(V)
10
2
Fig 2. Reverse current as a function of junction
temperature; maximum values.
Fig 3. Temperature coefficient of diode capacitance
as a function of reverse voltage; typical values.
9397 750 13835
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 04 — 3 November 2004
3 of 7
Philips Semiconductors
BB187
VHF variable capacitance diode
7. Package outline
Plastic surface mounted package; 2 leads
SOD523
A
c
HE
v
M
A
D
A
0
0.5
scale
1 mm
1
E
bp
2
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
0.65
0.58
bp
0.34
0.26
c
0.17
0.11
D
1.25
1.15
E
0.85
0.75
HE
1.65
1.55
v
0.1
(1)
Note
1. The marking bar indicates the cathode.
OUTLINE
VERSION
SOD523
REFERENCES
IEC
JEDEC
JEITA
SC-79
EUROPEAN
PROJECTION
ISSUE DATE
98-11-25
02-12-13
Fig 4. Package outline SOD523 (SC-79).
9397 750 13835
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 04 — 3 November 2004
4 of 7
Philips Semiconductors
BB187
VHF variable capacitance diode
8. Revision history
Table 6:
BB187_4
Modifications:
Revision history
Release date
20041103
Data sheet status
Product data sheet
Change notice Doc. number
-
9397 750 13835
Supersedes
BB187_3
Document ID
The format of this data sheet has been redesigned to comply with the new presentation and
information standard of Philips Semiconductors
Table 5 “Characteristics”:
∆C
d
/C
d
conditions changed from sequence of 15 diodes to sequence
of 10 diodes
Table 5 “Characteristics”:
added typical value of 2.75 pF for C
d(25V)
.
Product specification
Product specification
-
-
9397 750 09385
9397 750 06459
9397 750 06307
BB187_2
BB187_1
-
BB187_3
BB187_2
BB187_1
20020220
19991019
19990915
Preliminary specification -
9397 750 13835
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 04 — 3 November 2004
5 of 7
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