BBY 51-03W
Silicon Tuning Diode
l
High Q hyperabrupt tuning diode
l
Designed for low tuning voltage operation
l
For VCO's in mobile communications equipment
Type
BBY 51-03W
Marking
H
Ordering Code
(tape and reel)
Q62702-B663
Pin Configuration Package
1
2
C1
A2
SOD-323
1)
Maximum Ratings
Parameter
Reverse voltage
Forward current
Operating temperature range
Storage temperature range
Symbol
BBY 51-03W
7
20
-55 +150°C
-55...+150°C
Unit
V
mA
°C
°C
V
R
I
F
T
op
T
stg
______________________________
1) Package mounted on alumina 15mm x 16.7mm x 0.7mm
Semiconductor Group
1
Edition A01, 03.05.95
BBY 51-03W
Electrical Characteristics
at
T
A
= 25
°C,
unless otherwise specified.
Parameter
Symbol
min.
Value
typ.
max.
Unit
DC Characteristics
Reverse current
V
R
= 6 V
V
R
= 6 V,
T
A
= 65 °C
Diode capacitance
V
R
= 1 V,
f
= 1 MHz
V
R
= 2 V,
f
= 1 MHz
V
R
= 3 V,
f
= 1 MHz
V
R
= 4 V,
f
= 1 MHz
Capacitance ratio
V
R
= 1 V, 4 V,
f
= 1 MHz
Capacitance difference
V
R
= 1 V, 3 V,f = 1MHz
V
R
= 3 V, 4 V,f = 1MHz
Series resistance
V
R
= 1 V,
f
= 1 GHz
Case capacitance
f
= 1 MHz
Serien inductance
I
R
-
-
-
-
5.3
4.2
3.5
3.1
1.75
1.78
0.50
0.37
0.12
2
10
200
nA
C
T
4.5
3.4
2.7
2.5
6.1
5.2
4.6
3.7
pF
C
T1V
/C
T4V
1.55
2.2
-
pF
C
1V-
C
3V
C
3V-
C
4V
r
s
C
C
L
s
1.4
0.30
-
-
-
2.2
0.7
Ω
-
pF
-
-
nH
____________________
1) Without 100 % test, correlation limits
Semiconductor Group
2
Edition A01, 03.05.95
BBY 51-03W
Dioden capacitance
C
T
=
f
(V
R*
)
f
= 1 MHz
Temperature coefficient of the diode
capacitance
T
CC
= f (V
R
),
f
= 1 MHz
ppm/C°
T
CC
Semiconductor Group
3
Edition A01, 03.05.95
