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BBY5303WE6327XT

Variable Capacitance Diode, Ultra High Frequency, 5.3pF C(T), 6V, Silicon, Hyperabrupt, ROHS COMPLIANT PACKAGE-2

器件类别:分立半导体    二极管   

厂商名称:Infineon(英飞凌)

厂商官网:http://www.infineon.com/

器件标准:

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器件参数
参数名称
属性值
是否Rohs认证
符合
厂商名称
Infineon(英飞凌)
包装说明
R-PDSO-G2
Reach Compliance Code
compliant
ECCN代码
EAR99
Factory Lead Time
6 weeks
Is Samacsys
N
最小击穿电压
6 V
配置
SINGLE
二极管电容容差
9.43%
最小二极管电容比
1.8
标称二极管电容
5.3 pF
二极管元件材料
SILICON
二极管类型
VARIABLE CAPACITANCE DIODE
频带
ULTRA HIGH FREQUENCY
JESD-30 代码
R-PDSO-G2
元件数量
1
端子数量
2
最高工作温度
125 °C
最低工作温度
-55 °C
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
峰值回流温度(摄氏度)
NOT SPECIFIED
表面贴装
YES
端子形式
GULL WING
端子位置
DUAL
处于峰值回流温度下的最长时间
NOT SPECIFIED
变容二极管分类
HYPERABRUPT
Base Number Matches
1
文档预览
BBY53...
Silicon Tuning Diode
High Q hyperabrupt tuning diode
Designed for low tuning voltage operation
for VCO's in mobile communications equipment
High ratio at low reverse voltage
Pb-free (RoHS compliant) package
BBY53-02L
BBY53-02V
BBY53-02W
BBY53-03W
BBY53
BBY53-05W
!

, 
,

Type
BBY53
BBY53-02L
BBY53-02V
BBY53-02W
BBY53-03W
BBY53-05W
Parameter
Diode reverse voltage
Forward current
Package
SOT23
TSLP-2-1
SC79
SCD80
SOD323
SOT323
Configuration
common cathode
single, leadless
single
single
single
common cathode
Symbol
V
R
I
F
T
op
T
stg
L
S
(nH)
2
0.4
0.6
0.6
1.8
1.4
Value
6
20
-55 ... 125
-55 ... 150
Marking
S7s
LL
L
LL
white 5
S7s
Unit
V
mA
°C
Maximum Ratings
at
T
A
= 25°C, unless otherwise specified
Operating temperature range
Storage temperature
1
2011-06-15
BBY53...
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Parameter
DC Characteristics
Reverse current
V
R
= 4 V
V
R
= 4 V,
T
A
= 85 °C
AC Characteristics
Diode capacitance
V
R
= 1 V,
f
= 1 MHz
V
R
= 3 V,
f
= 1 MHz
Capacitance ratio
V
R
= 1 V,
V
R
= 3 V,
f
= 1 MHz
Series resistance
V
R
= 1 V,
f
= 1 GHz
r
S
-
0.47
-
C
T1
/C
T3
C
T
4.8
1.85
1.8
5.3
2.4
2.2
5.8
3.1
2.6
-
pF
Symbol
min.
I
R
-
-
Values
typ.
max.
Unit
nA
-
-
10
200
2
2011-06-15
BBY53...
Diode capacitance
C
T
=
ƒ
(V
R
)
f
= 1MHz
10
pF
Capacitance change
∆C
=
ƒ
(
T
A
)
f
= 1 MHz
5.25
%
8
7
6
5
4
3
2
1
0
0
3.75
3
3V
1V
C
T
V
C
T
2.25
1.5
0.75
0
-0.75
-1.5
-2.25
-3
0.5
1
1.5
2
3
-3.75
-40
-20
0
20
40
60
°C
100
V
R
T
A
Temperature coefficient of the diode
capacitance
TC
C
=
ƒ
(
V
R
)
f
= 1 MHz
10
-2
1/°C
TC
C
10
-3
10
-4
0
0.5
1
1.5
2
2.5
3
V
4
V
R
3
2011-06-15
Package SC79
BBY53...
4
2011-06-15
Package SCD80
BBY53...
Package Outline
0.2
0.8
±0.1
10˚MAX.
M
A
+0.05
0.13
-0.03
A
±1.5˚
1.3
±0.1
2
1.7
±0.1
0.7
±0.1
Foot Print
1.45
0.35
Marking Layout (Example)
2005, June
Date code
0.35
BAR63-02W
Type code
Cathode marking
Laser marking
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø180 mm = 8.000 Pieces/Reel (2 mm Pitch)
Reel ø330 mm = 10.000 Pieces/Reel
Standard
4
Reel with 2 mm Pitch
2
0.2
1.45
2.5
8
0.2
±0.05
Cathode
marking
1
0.3
±0.05
Cathode
marking
0.4
0.9
Cathode
marking
0.7
5
2011-06-15
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