DISCRETE SEMICONDUCTORS
DATA SHEET
M3D110
BC140; BC141
NPN medium power transistors
Product specification
Supersedes data of September 1994
File under Discrete Semiconductors, SC04
1997 May 12
Philips Semiconductors
Product specification
NPN medium power transistors
FEATURES
•
High current (max. 1 A)
•
Low voltage (max. 60 V).
APPLICATIONS
•
General purpose switching and amplification.
DESCRIPTION
NPN medium power transistor in a TO-39 metal package.
PNP complements: BC160 and BC161.
3
BC140; BC141
PINNING
PIN
1
2
3
emitter
base
collector, connected to case
DESCRIPTION
1
handbook, halfpage
2
2
3
MAM317
1
Fig.1 Simplified outline (TO-39) and symbol.
QUICK REFERENCE DATA
SYMBOL
V
CBO
PARAMETER
collector-base voltage
BC140
BC141
V
CEO
collector-emitter voltage
BC140
BC141
I
CM
P
tot
h
FE
peak collector current
total power dissipation
DC current gain
BC140-10; BC141-10
BC140-16; BC141-16
f
T
transition frequency
I
C
= 50 mA; V
CE
= 10 V; f = 100 MHz
T
case
≤
45
°C
I
C
= 100 mA; V
CE
= 1 V
63
100
50
100
160
−
160
250
−
MHz
open base
−
−
−
−
−
−
−
−
40
60
1.5
3.7
V
V
A
W
CONDITIONS
open emitter
−
−
−
−
80
100
V
V
MIN.
TYP.
MAX.
UNIT
1997 May 12
2
Philips Semiconductors
Product specification
NPN medium power transistors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
CBO
BC140
BC141
V
CEO
collector-emitter voltage
BC140
BC141
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
T
case
≤
45
°C
open collector
open base
−
−
−
−
−
−
−
PARAMETER
collector-base voltage
CONDITIONS
open emitter
−
−
BC140; BC141
MIN.
MAX.
80
100
40
60
7
1
1.5
200
3.7
+150
175
+150
UNIT
V
V
V
V
V
A
A
mA
W
°C
°C
°C
−65
−
−65
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
R
th j-c
PARAMETER
thermal resistance from junction to ambient
thermal resistance from junction to case
CONDITIONS
in free air
VALUE
200
35
UNIT
K/W
K/W
1997 May 12
3
Philips Semiconductors
Product specification
NPN medium power transistors
CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
I
EBO
h
FE
PARAMETER
collector cut-off current
emitter cut-off current
DC current gain
BC140-10; BC141-10
BC140-16; BC141-16
h
FE
DC current gain
BC140-10; BC141-10
BC140-16; BC141-16
h
FE
DC current gain
BC140-10; BC141-10
BC140-16; BC141-16
V
CEsat
V
BE
C
c
C
e
f
T
t
on
t
off
collector-emitter saturation voltage
base-emitter voltage
collector capacitance
emitter capacitance
transition frequency
I
C
= 1 A; I
B
= 100 mA
I
C
= 1 A; V
CE
= 1 V
I
E
= i
e
= 0; V
CB
= 10 V; f = 1 MHz
I
C
= i
c
= 0; V
EB
= 0.5 V; f = 1 MHz
I
C
= 50 mA; V
CE
= 10 V; f = 100 MHz
I
Con
= 100 mA; I
Bon
= 5 mA;
I
Boff
=
−5
mA
I
C
= 1 A; V
CE
= 1 V
−
−
−
−
−
−
50
−
−
I
C
= 100 mA; V
CE
= 1 V
63
100
CONDITIONS
I
E
= 0; V
CB
= 60 V
I
E
= 0; V
CB
= 60 V; T
j
= 150
°C
I
C
= 0; V
EB
= 5 V
I
C
= 100
µA;
V
CE
= 1 V
−
−
BC140; BC141
MIN.
−
−
−
TYP.
10
10
−
40
90
100
160
20
30
0.6
1.2
−
−
−
−
−
MAX. UNIT
100
100
100
−
−
160
250
−
−
1
1.8
25
80
−
V
V
pF
pF
MHz
nA
µA
nA
Switching times (between 10% and 90% levels)
turn-on time
turn-off time
250
850
ns
ns
1997 May 12
4
Philips Semiconductors
Product specification
NPN medium power transistors
PACKAGE OUTLINE
Metal-can cylindrical single-ended package; 3 leads
BC140; BC141
SOT5/11
j
B
α
seating plane
w
M
A
M
B
M
1
b
k
2
3
D
1
a
A
D
A
L
0
5
scale
10 mm
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
6.60
6.35
a
5.08
b
D
D
1
j
k
L
14.2
12.7
w
0.2
α
45
°
0.48 9.39 8.33 0.85 0.95
0.41 9.08 8.18 0.75 0.75
OUTLINE
VERSION
SOT5/11
REFERENCES
IEC
JEDEC
TO-39
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
97-04-11
1997 May 12
5
