ne.
,
O
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
USA.
TELEPHONE: (973) 376-2922
(212) 227-6005
FAX: (973) 376-8960
PNP SILICON PLANAR EPITAXIAL TRANSISTORS
^
448, A,
o
Ho' ^' Q
UL>
BC 450, A, B
TO-92
Plastic Package
General Purpose High Voltage Transistors.
ABSOLUTE MAXIMUM RATINGS (Ta=25"C unless specified otherwise)
DESCRIPTION
SYMBOL TEST CONDITION
WIN
Collector Emitter Voltage
60
VCEO
Collector Base Voltage
VCBO
60
Emitter Base Voltage
VEBO
5
Collector Current Continuous
Total Device Dissipation® Ta=25°C
Derate Above 25°C
Total Device Dissipation® Tc=25°C
Derate Above 25°C
Operating And Storage Junction
Temperature Range
THERMAL RESISTANCE
Junction to ambient
Junction to case
Rth(i-a)
Rth(j-c)
TYP
80
80
5
625
5
1.5
12
MAX
100
100
5
UNITS
V
V
V
mA
mW
Ic
PD
PD
Tj, Tstg
300
mW/°C
W
mW/°C
°C
-55 to +150
200
83.3
°C/W
°C/W
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However. N.I Setni-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
ELECTRICAL CHARACTERISTICS (Ta=25°C unless specified otherwise)
SYMBOL TEST CONDITION
MIN
DESCRIPTION
Collector Emitter BreakdownVoltage
BC446
BC448
BC450
Collector Base Breakdown Voltage
BC446
BC448
BC450
Emitter Base Breakdown Voltage
Collector-Cut off Current
BC446
BC448
BC450
DC Current Gain
NON SUFFIX
hpE*
l
c
=2mA,V
CE
=5V
BV
EBO
ICBO
V
CB
=40V, I
E
=0
V
CB
=60V, I
E
=0
VCB =80V, I
E
=0
l
E
=10uA, l
c
=0
BVcBO
l
c
=100uA, I
E
=0
BV
CEO
* l
c
=1mA.I
B
=0
TYP
MAX
UNITS
V
V
V
V
V
V
V
60
80
100
60
80
100
5
100
100
100
nA
nA
nA
A
B
NON SUFFIX
lc=2mA,V
CE
=5V
50
120
180
50
100
160
50
60
90
460
220
460
A
B
NON SUFFIX
l
c
=100mA,V
C
E-5V
A
B
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
Base Emitter On Voltage
VcE(sat)
V
B
E(
Sa
t)
V
BE(on)
l
c
=100mA,l
B
=10mA
l
c
= 1 00mA, I
B
= 10mA
l
c
=2mA,V
C
E =5V
l
c
=100mA,V
ce
=5V*
DYNAMICS CHARACTERISTICS
Transition Frequency
f
T
l
c
=50mA, V
CE
=5V
f=100MHz
Pulse Test : Pulse width < 300^5, Duty Cycle <2%.
0.25
0.85
0.55
0.70
1.2
V
V
V
V
100
MHz
All dlnwi»lom fn mm unlwt spactftod othemtii
ITEM
BOOT WIDTH
BODY HEIGHT
SPECIFICATION
SYMBOL
A1
A
T
P
Po
M1N NOM MAX
44
4.0
48
52
42
39
12.7
TOL.
REMARKS
BODY THICKNESS
PITCH OF COMPONENT
FEED HOLE PITCH
FEED HOLE CENTRE TO
COMPONENT CENTRE
DISTANCE BETWEEN OUTER
LEADS
COMPONENT ALIGNMENT
TAPE WC TH
HOLD-GOWN TAPE WIDTH
HOLE POSITION
HOLD-DOWN TAPE POSITION
LEAD WIRE CLINCH HEIGHT
COMPONENT HEIGHT
LENGTH OF SNIPPED LEADS
FEED HOLE DIAMETER
TOTAL TAPE THICKNESS
LEAD - TO - LEAD OI5TANCEF1
CLINCH HEIGHT
PULL- OUT FOftCE
NOTES
1
127
tl
t03
P2
F
Ah
W
Wo
W1
WJ
Ho
HI
L
Do
I
F2
H2
(P)
SN
635
5,08
±0.4
CUMULATIVE PITCH
EB ROR1Q mm/20
PITCH
TQBEUEA3UREDAT
BOTTOM OF CLINCH
AT TOP OF BODY
-06
-0!
»Q5
±02
#
±02
*05
*02
12
0
IS
6
9
05
16
23,25
11 0
4
254
PIN CONFIGURATION
1,
2.
3
EMITTER
BASE
COLLECTOR
All diminsions in mm
11 0 3 - 0 6
I"
,
3
MAXIMUM ALIGNMENT DELATION
BETWEEN
LEADS NOT TO
BE
GREATER THAN B Z tu
MAXIMUM MOM-CUMULATIVE WAHIAHON BETWEEN TAPE FEED HaES SHALL MOT EXC
1
,
), HOLDLWWN TAPE HOI TO EXCEED BETONQ THt EDGE(S) OF CARRIER TAPE
MO
EXPOSURE OF ADHESIVE.
tMERE SHAiL ffi NO
1 mm IN 21
4 NO MORE FMAN
i
CONSECUTI^ uissna COMPONEMTS
wt
PERMITTED.
S. A TAPE TRAILER, HAVING AT LEAST THREE FEED HO-ES A»6 REQUIRED AFTER THE LAST COMPONENT
«
SPLICES SHALL NOT INTERFERE WITH THE SfflOCKET
FKQ
HO.E3.
PCB设计
