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BC52-16PA115

Solid State Relays - PCB Mount Normally Open Form 1A 60V

器件类别:半导体    分立半导体   

厂商名称:NXP(恩智浦)

厂商官网:https://www.nxp.com

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器件参数
参数名称
属性值
产品种类
Product Category
Bipolar Transistors - BJT
制造商
Manufacturer
NXP(恩智浦)
RoHS
Details
安装风格
Mounting Style
SMD/SMT
封装 / 箱体
Package / Case
SOT-1061-3
Transistor Polarity
PNP
Configuration
Single
Collector- Emitter Voltage VCEO Max
- 60 V
Collector- Base Voltage VCBO
- 60 V
Emitter- Base Voltage VEBO
- 5 V
Collector-Emitter Saturation Voltage
- 0.5 V
Maximum DC Collector Current
- 2 A
Gain Bandwidth Product fT
145 MHz
最大工作温度
Maximum Operating Temperature
+ 150 C
Continuous Collector Current
- 1 A
DC Current Gain hFE Max
250
最小工作温度
Minimum Operating Temperature
- 55 C
系列
Packaging
Reel
系列
Packaging
MouseReel
系列
Packaging
Cut Tape
Pd-功率耗散
Pd - Power Dissipation
1.65 W
工厂包装数量
Factory Pack Quantity
3000
文档预览
BCP52; BCX52; BC52PA
60 V, 1 A PNP medium power transistors
Rev. 9 — 18 October 2011
Product data sheet
1. Product profile
1.1 General description
PNP medium power transistor series in Surface-Mounted Device (SMD) plastic packages.
Table 1.
Product overview
Package
NXP
BCP52
BCX52
BC52PA
[1]
Type number
[1]
NPN complement
JEITA
SC-73
SC-62
-
JEDEC
-
TO-243
-
BCP55
BCX55
BC55PA
SOT223
SOT89
SOT1061
Valid for all available selection groups.
1.2 Features and benefits
High current
Three current gain selections
High power dissipation capability
Exposed heatsink for excellent thermal and electrical conductivity (SOT89, SOT1061)
Leadless very small SMD plastic package with medium power capability (SOT1061)
AEC-Q101 qualified
1.3 Applications
Linear voltage regulators
High-side switches
Battery-driven devices
Power management
MOSFET drivers
Amplifiers
1.4 Quick reference data
Table 2.
Symbol
V
CEO
I
C
I
CM
Quick reference data
Parameter
collector-emitter voltage
collector current
peak collector current
single pulse; t
p
1 ms
Conditions
open base
Min
-
-
-
Typ
-
-
-
Max
60
1
2
Unit
V
A
A
NXP Semiconductors
BCP52; BCX52; BC52PA
60 V, 1 A PNP medium power transistors
Quick reference data
…continued
Parameter
DC current gain
h
FE
selection -10
h
FE
selection -16
Conditions
V
CE
=
2
V;
I
C
=
150
mA
V
CE
=
2
V;
I
C
=
150
mA
V
CE
=
2
V;
I
C
=
150
mA
Min
63
63
100
Typ
-
-
-
Max
250
160
250
Unit
Table 2.
Symbol
h
FE
2. Pinning information
Table 3.
Pin
SOT223
1
2
3
4
base
collector
emitter
collector
1
2
3
3
sym028
Pinning
Description
Simplified outline
Graphic symbol
4
1
2, 4
SOT89
1
2
3
emitter
collector
base
3
2
1
3
1
006aaa231
2
SOT1061
1
2
3
base
emitter
collector
3
1
2
1
2
sym013
3
Transparent top view
BCP52_BCX52_BC52PA
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 9 — 18 October 2011
2 of 22
NXP Semiconductors
BCP52; BCX52; BC52PA
60 V, 1 A PNP medium power transistors
3. Ordering information
Table 4.
Ordering information
Package
Name
BCP52
BCX52
BC52PA
[1]
Type number
[1]
Description
plastic surface-mounted package with increased
heatsink; 4 leads
plastic surface-mounted package; exposed die pad for
good heat transfer; 3 leads
Version
SOT223
SOT89
SOT1061
SC-73
SC-62
HUSON3 plastic thermal enhanced ultra thin small outline
package; no leads; 3 terminals; body 2
2
0.65 mm
Valid for all available selection groups.
4. Marking
Table 5.
BCP52
BCP52-10
BCP52-16
BCX52
BCX52-10
BCX52-16
BC52PA
BC52-10PA
BC52-16PA
Marking codes
Marking code
BCP52
BCP52/10
BCP52/16
AE
AG
AM
BS
BT
BU
Type number
BCP52_BCX52_BC52PA
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 9 — 18 October 2011
3 of 22
NXP Semiconductors
BCP52; BCX52; BC52PA
60 V, 1 A PNP medium power transistors
5. Limiting values
Table 6.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
P
tot
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
peak collector current
base current
peak base current
total power dissipation
BCP52
single pulse;
t
p
1 ms
T
amb
25
C
[1]
[2]
[3]
Conditions
open emitter
open base
open collector
single pulse;
t
p
1 ms
Min
-
-
-
-
-
-
-
Max
60
60
5
1
2
0.3
0.3
Unit
V
V
V
A
A
A
A
-
-
-
-
-
-
-
-
-
-
-
-
55
65
0.65
1.00
1.35
0.50
0.95
1.35
0.42
0.83
1.10
0.81
1.65
150
+150
+150
W
W
W
W
W
W
W
W
W
W
W
C
C
C
BCX52
[1]
[2]
[3]
BC52PA
[1]
[2]
[3]
[4]
[5]
T
j
T
amb
T
stg
[1]
[2]
[3]
[4]
[5]
junction temperature
ambient temperature
storage temperature
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm
2
.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm
2
.
Device mounted on an FR4 PCB, 4-layer copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, 4-layer copper, tin-plated, mounting pad for collector 1 cm
2
.
BCP52_BCX52_BC52PA
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 9 — 18 October 2011
4 of 22
NXP Semiconductors
BCP52; BCX52; BC52PA
60 V, 1 A PNP medium power transistors
1.5
(1)
006aac674
1.5
(1)
006aac675
P
tot
(W)
(2)
P
tot
(W)
1.0
(2)
1.0
(3)
(3)
0.5
0.5
0.0
–75
–25
25
75
125
175
T
amb
(°C)
0.0
–75
–25
25
75
125
175
T
amb
(°C)
(1) FR4 PCB, mounting pad for collector 6 cm
2
(2) FR4 PCB, mounting pad for collector 1 cm
2
(3) FR4 PCB, standard footprint
(1) FR4 PCB, mounting pad for collector 6 cm
2
(2) FR4 PCB, mounting pad for collector 1 cm
2
(3) FR4 PCB, standard footprint
Fig 1.
Power derating curves SOT223
2.0
P
tot
(W)
1.5
(1)
Fig 2.
Power derating curves SOT89
006aac676
(2)
1.0
(3)
(4)
0.5
(5)
0.0
–75
–25
25
75
125
175
T
amb
(°C)
(1) FR4 PCB, 4-layer copper, mounting pad for collector 1 cm
2
(2) FR4 PCB, single-sided copper, mounting pad for collector 6 cm
2
(3) FR4 PCB, single-sided copper, mounting pad for collector 1 cm
2
(4) FR4 PCB, 4-layer copper, standard footprint
(5) FR4 PCB, single-sided copper, standard footprint
Fig 3.
Power derating curves SOT1061
BCP52_BCX52_BC52PA
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 9 — 18 October 2011
5 of 22
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参数对比
与BC52-16PA115相近的元器件有:BCP52-10135、BCX52-10115。描述及对比如下:
型号 BC52-16PA115 BCP52-10135 BCX52-10115
描述 Solid State Relays - PCB Mount Normally Open Form 1A 60V Multilayer Ceramic Capacitors MLCC - SMD/SMT 16volts 0.47uF 5% X7R AUTO Multilayer Ceramic Capacitors MLCC - SMD/SMT 2220 4.7uF 100V X7R 10%
产品种类
Product Category
Bipolar Transistors - BJT Bipolar Transistors - BJT Bipolar Transistors - BJT
制造商
Manufacturer
NXP(恩智浦) NXP(恩智浦) NXP(恩智浦)
RoHS Details Details Details
安装风格
Mounting Style
SMD/SMT SMD/SMT SMD/SMT
封装 / 箱体
Package / Case
SOT-1061-3 SOT-223-4 SOT-89-3
Transistor Polarity PNP PNP PNP
Configuration Single Single Single
Collector- Emitter Voltage VCEO Max - 60 V - 60 V 60 V
Collector- Base Voltage VCBO - 60 V - 60 V 60 V
Emitter- Base Voltage VEBO - 5 V - 5 V 5 V
Maximum DC Collector Current - 2 A - 1.5 A 1 A
Gain Bandwidth Product fT 145 MHz 145 MHz 145 MHz
最大工作温度
Maximum Operating Temperature
+ 150 C + 150 C + 150 C
DC Current Gain hFE Max 250 250 63 at 150 mA at 2 V
最小工作温度
Minimum Operating Temperature
- 55 C - 65 C - 65 C
Pd-功率耗散
Pd - Power Dissipation
1.65 W 1 W 1300 mW
工厂包装数量
Factory Pack Quantity
3000 4000 1000
Continuous Collector Current - 1 A - 1 A -
系列
Packaging
Cut Tape Cut Tape MouseReel
DC Collector/Base Gain hfe Min - 40 63 at 150 mA at 2 V
高度
Height
- 1.7 mm 1.6 mm
长度
Length
- 6.7 mm 4.6 mm
宽度
Width
- 3.7 mm 2.6 mm
单位重量
Unit Weight
- 0.003951 oz 0.004603 oz
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