UNISONIC TECHNOLOGIES CO., LTD
BC546/547/548
SWITCHING AND AMPLIFIER
APPLICATIONS
FEATURES
NPN EPITAXIAL SILICON TRANSISTOR
* High Voltage:
UTC BC546,
V
CEO
=65V
UTC BC547,
V
CEO
=45V
UTC BC548,
V
CEO
=30V
1
TO-92
ORDERING INFORMATION
Order Number
Halogen Free
BC546G-x-T92-B
BC546G-x-T92-K
BC547G-x-T92-B
BC547G-x-T92-K
BC548G-x-T92-B
BC548G-x-T92-K
B: Base
E: Emitter
Package
TO-92
TO-92
TO-92
TO-92
TO-92
TO-92
Pin Assignment
1
2
3
C
B
E
C
B
E
C
B
E
C
B
E
C
B
E
C
B
E
Packing
Tape Box
Bulk
Tape Box
Bulk
Tape Box
Bulk
Lead Free
BC546L-x-T92-B
BC546L-x-T92-K
BC547L-x-T92-B
BC547L-x-T92-K
BC548L-x-T92-B
BC548L-x-T92-K
Note: Pin Assignment: C: Collector
BC546L-x-T92-B
(1)Packing Type
(2)Package Type
(3)Rank
(4)Halogen Free
(1) B: Tape Box, K: Bulk
(2) T92: TO-92
(3) x: refer to CLASSIFICATION OF h
FE
(4) L: Lead Free, G: Halogen Free
MARKING
BC546
BC547
BC548
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PARAMETER
SYMBOL
NPN EPITAXIAL SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING
(T
A
=25°C, unless otherwise specified)
RATINGS
UNIT
BC546
80
V
Collector-base voltage
BC547
V
CBO
50
V
BC548
30
V
BC546
65
V
Collector-emitter voltage
BC547
V
CEO
45
V
BC548
30
V
BC546
6
V
Emitter-base voltage
BC547
V
EBO
6
V
BC548
5
V
Collector current (DC)
I
C
100
mA
Collector dissipation
P
C
500
mW
Junction Temperature
T
J
150
°C
Storage Temperature
T
STG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS
(T
A
=25°C, unless otherwise specified)
SYMBOL
TEST CONDITIONS
I
CBO
V
CB
=30V, I
E
=0
h
FE
V
CE
=5V, I
C
=2mA
I
C
=10mA, I
B
=0.5mA
V
CE(SAT)
I
C
=100mA, I
B
=5mA
I
C
=10mA, I
B
=0.5mA
V
BE(SAT)
I
C
=100mA, I
B
=5mA
V
CE
=5V, I
C
=2mA
V
BE(ON)
V
CE
=5V, I
C
=10mA
f
T
V
CE
=5V, I
C
=10mA, f=100MHz
C
ob
V
CB
=10V, I
E
=0, f=1MHz
C
ib
V
EB
=0.5V, I
C
=0, f=1MHz
NF
V
CE
=5V, I
C
=200μA, f=1KHz, R
G
=2KΩ
MIN
110
90
200
700
900
660
300
3.5
9
2
TYP
MAX UNIT
15
nA
800
250
mV
600
mV
mV
mV
700
mV
720
mV
MHz
6
pF
pF
10
dB
PARAMETER
Collector Cut-off Current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter on voltage
Current gain bandwidth product
Output Capacitance
Input Capacitance
Noise Figure
580
CLASSIFICATION OF h
FE
RANK
h
FE
A
110 - 220
B
200 – 450
C
420 - 800
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Capacitance, C
ob
(pF)
Collector Current , I
C
(mA)
DC Current Gain, h
FE
TYPICAL CHARACTERISTICS
UNISONIC TECHNOLOGIES CO., LTD
Saturation Voltage, V
BE(sat)
, V
CE(sat)
, (V)
Collect current, I
C
(mA)
www.unisonic.com.tw
Current Gain-Bandwidth Prouct, f
T
NPN EPITAXIAL SILICON TRANSISTOR
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NPN EPITAXIAL SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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