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BC559BBU

Bipolar Transistors - BJT TO-92 PNP GP AMP

器件类别:半导体    分立半导体   

厂商名称:ON Semiconductor(安森美)

厂商官网:http://www.onsemi.cn

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器件参数
参数名称
属性值
Product Attribute
Attribute Value
制造商
Manufacturer
ON Semiconductor(安森美)
产品种类
Product Category
Bipolar Transistors - BJT
RoHS
Details
安装风格
Mounting Style
Through Hole
封装 / 箱体
Package / Case
TO-92-3
Transistor Polarity
PNP
Configuration
Single
Collector- Emitter Voltage VCEO Max
- 30 V
Collector- Base Voltage VCBO
- 30 V
Emitter- Base Voltage VEBO
- 5 V
Collector-Emitter Saturation Voltage
- 250 mV
Maximum DC Collector Current
- 0.1 A
Gain Bandwidth Product fT
150 MHz
最小工作温度
Minimum Operating Temperature
- 65 C
最大工作温度
Maximum Operating Temperature
+ 150 C
高度
Height
5.33 mm
长度
Length
5.2 mm
系列
Packaging
Bulk
宽度
Width
4.19 mm
Continuous Collector Current
- 0.1 A
Pd-功率耗散
Pd - Power Dissipation
500 mW (1/2 W)
工厂包装数量
Factory Pack Quantity
1000
单位重量
Unit Weight
0.007090 oz
文档预览
Is Now Part of
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www.onsemi.com
Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers
will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor
product management systems do not have the ability to manage part nomenclature that utilizes an underscore
(_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain
device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated
device numbers. The most current and up-to-date ordering information can be found at
www.onsemi.com.
Please
email any questions regarding the system integration to
Fairchild_questions@onsemi.com.
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BC556 / BC557 / BC558 / BC559 / BC560 — PNP Epitaxial Silicon Transistor
January 2016
BC556 / BC557 / BC558 / BC559 / BC560
PNP Epitaxial Silicon Transistor
Features
Switching and Amplifier
High-Voltage: BC556, V
CEO
= -65 V
Low-Noise: BC559, BC560
Complement to BC546, BC547, BC548, BC549, and BC550
12
3
1
2
TO-92
1. Collector
2. Base
3. Emitter
3
Straight Lead
Bulk Packing
Bent Lead
Tape & Reel
Ammo Packing
Ordering Information
Part Number
BC556ABU
BC556ATA
BC556BTA
BC556BTF
BC556BTFR
BC557ATA
BC557BTA
BC557BTF
BC558BTA
BC559BTA
BC559CTA
BC560CTA
Marking
BC556A
BC556A
BC556B
BC556B
BC556B
BC557A
BC557B
BC557B
BC558B
BC559B
BC559C
BC560C
Package
TO-92 3L
TO-92 3L
TO-92 3L
TO-92 3L
TO-92 3L
TO-92 3L
TO-92 3L
TO-92 3L
TO-92 3L
TO-92 3L
TO-92 3L
TO-92 3L
Packing Method
Bulk
Ammo
Ammo
Tape and Reel
Tape and Reel
Ammo
Ammo
Tape and Reel
Ammo
Ammo
Ammo
Ammo
© 2002 Fairchild Semiconductor Corporation
BC556 / BC557 / BC558 / BC559 / BC560 Rev. 1.7
www.fairchildsemi.com
1
BC556 / BC557 / BC558 / BC559 / BC560 — PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at T
A
= 25°C unless otherwise noted.
Symbol
V
CBO
Collector-Base Voltage
Parameter
BC556
BC557 / BC560
BC558 / BC559
BC556
Value
-80
-50
-30
-65
-45
-30
-5
-100
-200
-200
150
-65 to +150
Unit
V
V
CEO
V
EBO
I
C
I
CP
I
BP
T
J
T
STG
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Peak Collector Current (Pulse)
Peak Base Current (Pulse)
Junction Temperature
Storage Temperature Range
BC557 / BC560
BC558 / BC559
V
V
mA
mA
mA
°C
°C
Thermal Characteristics
(1)
Values are at T
A
= 25°C unless otherwise noted.
Symbol
P
D
R
θJA
Total Power Dissipation
Derate Above 25°C
Parameter
Max.
500
4.0
250
Unit
mW
mW/°C
°C/W
Thermal Resistance, Junction-to-Ambient
Note:
1. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.
© 2002 Fairchild Semiconductor Corporation
BC556 / BC557 / BC558 / BC559 / BC560 Rev. 1.7
www.fairchildsemi.com
2
BC556 / BC557 / BC558 / BC559 / BC560 — PNP Epitaxial Silicon Transistor
Electrical Characteristics
Values are at T
A
= 25°C unless otherwise noted.
Symbol
I
CBO
h
FE
V
CE
(sat)
V
BE
(sat)
V
BE
(on)
f
T
C
ob
Parameter
Collector Cut-Off Current
DC Current Gain
Collector-Emitter Saturation
Voltage
Collector-Base Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
Output Capacitance
Conditions
V
CB
= -30 V, I
E
= 0
V
CE
= -5 V, I
C
= -2 mA
I
C
= -10 mA, I
B
= -0.5 mA
I
C
= -100 mA, I
B
= -5 mA
I
C
= -10 mA, I
B
= -0.5 mA
I
C
= -100 mA, I
B
= -5 mA
V
CE
= -5 V, I
C
= -2 mA
V
CE
= -5 V, I
C
= -10 mA
V
CE
= -5 V, I
C
= -10 mA,
f = 10 MHz
V
CB
= -10 V, I
E
= 0, f = 1 MHz
Min.
110
Typ.
Max.
-15
800
Unit
nA
-90
-250
-700
-900
-600
-660
-300
-650
mV
mV
-750
-800
mV
MHz
150
6
2
1
1.2
1.2
10
4
4.0
2.0
pF
NF
Noise
Figure
BC556 / BC557 / BC558 V
CE
= -5 V, I
C
= -200
μA,
f = 1 kHz, R
G
= 2 kΩ
BC559 / BC560
BC559
BC560
V
CE
= -5 V, I
C
= -200
μA,
R
G
= 2 kΩ, f = 30 to 15000 MHz
dB
h
FE
Classification
Classification
h
FE
A
110 ~ 220
B
200 ~ 450
C
420 ~ 800
© 2002 Fairchild Semiconductor Corporation
BC556 / BC557 / BC558 / BC559 / BC560 Rev. 1.7
www.fairchildsemi.com
3
BC556 / BC557 / BC558 / BC559 / BC560 — PNP Epitaxial Silicon Transistor
Typical Performance Characteristics
-50
-45
1000
I
C
[mA], COLLECTOR CURRENT
I
B
= -400
μ
A
I
B
= -350
μ
A
T
A
= 150 C
o
V
CE
= -5V
-40
-35
-30
-25
-20
-15
-10
-5
-0
-2
-4
-6
-8
-10
h
FE
, DC CURRENT GAIN
I
B
= -300
μ
A
I
B
= -250
μ
A
I
B
= -200
μ
A
I
B
= -150
μ
A
I
B
= -100
μ
A
I
B
= -50
μ
A
T
A
= 25 C
T
A
= -55 C
100
o
o
10
-12
-14
-16
-18
-20
-1
-10
-100
-1000
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
I
C
[mA], COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. DC Current Gain
-10
-1000
V
CE
(sat) [V], COLLECTOR-EMITTER
I
C
= 20 I
B
I
C
= 20 I
B
I
C
[mA], COLLECTOR CURRENT
SATURATION VOLTAGE
-1
-100
T
A
= 150 C
-0.1
o
T
A
= 25 C
o
-10
T
A
= -55 C
o
T
A
= 150 C
-1
-0.0
-0.2
-0.4
o
T
A
= 25 C
-0.6
-0.8
o
T
A
= -55 C
-1.0
-1.2
o
-0.01
-1
-10
-100
-1000
I
C
[mA], COLLECTOR CURRENT
V
BE
(sat) [V], BASE-EMITTER SATURATION VOLTAGE
Figure 3. Collector-Emitter Saturation Voltage
Figure 4. Base-Emitter Saturation Voltage
-1000
I
C
[mA], COLLECTOR CURRENT
V
CE
= -5V
-100
-10
T
A
= 150 C
o
T
A
= 25 C
o
T
A
= -55 C
1
o
C
ob
(pF), CAPACITANCE
10
f=1MHz
I
E
= 0
-0.0
-0.2
-0.4
-0.6
-0.8
-1.0
-1.2
-1
-10
-100
V
BE
(on) [V], BASE-EMITTER ON VOLTAGE
V
CB
[V], COLLECTOR-BASE VOLTAGE
Figure 5. Base-Emitter On Voltage
Figure 6. Collector Output Capacitance
© 2002 Fairchild Semiconductor Corporation
BC556 / BC557 / BC558 / BC559 / BC560 Rev. 1.7
www.fairchildsemi.com
4
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