型号
  • 型号
  • 关键词
首页 > 器件类别 > 半导体 > 分立半导体

BC640TF

Bipolar Transistors - BJT PNP Si Transistor Epitaxial

器件类别：半导体    分立半导体   

厂商名称：ON Semiconductor(安森美)

厂商官网：http://www.onsemi.cn

器件标准：

下载文档
参数 预览 参数对比
BC640TF 在线购买

供应商：

器件：BC640TF

价格：-

最低购买：-

库存：点击查看

点击购买

器件参数
参数名称
属性值
Product Attribute
Attribute Value
制造商
Manufacturer
ON Semiconductor(安森美)
产品种类
Product Category
Bipolar Transistors - BJT
RoHS
Details
安装风格
Mounting Style
Through Hole
封装 / 箱体
Package / Case
TO-92-3 Kinked Lead
Transistor Polarity
PNP
Configuration
Single
Collector- Emitter Voltage VCEO Max
- 80 V
Collector- Base Voltage VCBO
- 100 V
Emitter- Base Voltage VEBO
- 5 V
Collector-Emitter Saturation Voltage
- 0.5 V
Maximum DC Collector Current
1 A
Gain Bandwidth Product fT
100 MHz
最小工作温度
Minimum Operating Temperature
- 65 C
最大工作温度
Maximum Operating Temperature
+ 150 C
DC Current Gain hFE Max
160
高度
Height
4.7 mm
长度
Length
4.7 mm
系列
Packaging
Cut Tape
系列
Packaging
Reel
宽度
Width
3.93 mm
Continuous Collector Current
- 1 A
DC Collector/Base Gain hfe Min
40
Pd-功率耗散
Pd - Power Dissipation
1 W
工厂包装数量
Factory Pack Quantity
2000
单位重量
Unit Weight
0.008466 oz
文档预览
Is Now Part of
To learn more about ON Semiconductor, please visit our website at
www.onsemi.com
Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers
will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor
product management systems do not have the ability to manage part nomenclature that utilizes an underscore
(_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain
device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated
device numbers. The most current and up-to-date ordering information can be found at
www.onsemi.com.
Please
email any questions regarding the system integration to
Fairchild_questions@onsemi.com.
ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number
of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right
to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON
Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out
of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor
is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
BC640 — PNP Epitaxial Silicon Transistor
December 2015
BC640
PNP Epitaxial Silicon Transistor
Features
• Switching and Amplifier Applications
• Complement to BC639
TO-92
12
1
1. Emitter
2. Collector
3. Base
3
3
2
Straight Lead
Bulk Packing
Bent Lead
Tape & Reel
Ammo Packing
Ordering Information
Part Number
BC640TA
Top Mark
BC640
Package
TO-92 3L
Packing Method
Ammo
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at T
A
= 25°C unless otherwise noted.
Symbol
V
CER
V
CES
V
CEO
V
EBO
I
C
I
CP
I
B
T
J
T
STG
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Peak Collector Current
Base Current
Junction Temperature
Storage Temperature
Parameter
Collector-Emitter Voltage at R
BE
= 1 K
Ω
Value
-100
-100
-80
-5
-1
-1.5
-100
150
-65 to 150
Unit
V
V
V
V
A
A
mA
°C
°C
© 2004 Fairchild Semiconductor Corporation
BC640 Rev. 1.4
www.fairchildsemi.com
BC640 — PNP Epitaxial Silicon Transistor
Thermal Characteristics
(1)
Values are at T
A
= 25°C unless otherwise noted.
Symbol
P
D
R
θJA
Power Dissipation
Derate Above 25°C
Parameter
Value
1
8
125
Unit
W
mW/°C
°C/W
Thermal Resistance, Junction-to-Ambient
Note:
1. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.
Electrical Characteristics
Values are at T
A
= 25°C unless otherwise noted.
Symbol
BV
CEO
I
CBO
I
EBO
h
FE1
h
FE2
h
FE3
V
CE
(sat)
V
BE
(on)
f
T
Parameter
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
Conditions
V
CB
= -30 V, I
E
= 0
V
EB
= -5 V, I
C
= 0
V
CE
= -2 V, I
C
= -5 mA
V
CE
= -2 V, I
C
= -150 mA
V
CE
= -2 V, I
C
= -500 mA
I
C
= -500 mA, I
B
= -50 mA
V
CE
= -2 V, I
C
= -500 mA
V
CE
= -5 V, I
C
= -10 mA,
f = 50 MHz
Min.
-80
Typ.
Max.
-0.1
-10
Unit
V
μA
μA
Collector-Emitter Breakdown Voltage I
C
= -10 mA, I
B
= 0
25
40
25
-0.5
-1
100
V
V
MHz
160
© 2004 Fairchild Semiconductor Corporation
BC640 Rev. 1.4
www.fairchildsemi.com
2
BC640 — PNP Epitaxial Silicon Transistor
Typical Performance Characteristics
-500
1000
I
B
= - 1.8 mA
I
C
[mA], COLLECTOR CURRENT
I
B
= - 1.6 mA
-400
V
CE
= - 2V
I
B
= - 1.2 mA
-300
I
B
= - 1.0 mA
I
B
= - 0.8 mA
h
FE
, DC CURRENT GAIN
I
B
= - 1.4 mA
100
-200
I
B
= - 0.6 mA
I
B
= - 0.4 mA
-100
I
B
= - 0.2 mA
-0
-0
-10
-20
-30
-40
-50
10
-1
-10
-100
-1000
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
I
C
[mA], COLLECTOR CURRENT
Figure 1. Static Characteristic
V
BE
(sat), V
CE
(sat)[V], SATURATION VOLTAGE
-10
-1000
Figure 2. DC Current Gain
I
C
= 10 I
B
-1
V
BE
(sat)
I
C
[mA], COLLECTOR CURRENT
V
CE
= - 2V
-100
-0.1
-10
V
CE
(sat)
-0.01
-1
-10
-100
-1000
-1
-0.2
-0.4
-0.6
-0.8
-1.0
-1.2
I
C
[mA], COLLECTOR CURRENT
V
BE
[V], BASE-EMITTER VOLTAGE
Figure 3. Base-Emitter Saturation Voltage and
Collector-Emitter Saturation Voltage
100
Figure 4. Base-Emitter On Voltage
f=1MHz
C
ob
[pF], CAPACITANCE
10
1
-1
-10
-100
V
CB
[V], COLLECTOR-BASE VOLTAGE
Figure 5. Collector Output Capacitance
© 2004 Fairchild Semiconductor Corporation
BC640 Rev. 1.4
www.fairchildsemi.com
3
BC640 — PNP Epitaxial Silicon Transistor
Physical Dimensions
Figure 6. 3-Lead, TO-92, Molded, 0.2 In Line Spacing Lead Form, Ammo Type
© 2004 Fairchild Semiconductor Corporation
BC640 Rev. 1.4
www.fairchildsemi.com
4
查看更多>
参数对比
与BC640TF相近的元器件有：BC640BU、BC640TAR、BC640TFR。描述及对比如下：
型号 BC640TF BC640BU BC640TAR BC640TFR
描述 Bipolar Transistors - BJT PNP Si Transistor Epitaxial Bipolar Transistors - BJT TO-92 PNP GP AMP Bipolar Transistors - BJT PNP Si Transistor Epitaxial TRANS PNP 80V 1A TO-92
系列
Packaging		 Reel Bulk Ammo Pack -
Product Attribute Attribute Value Attribute Value Attribute Value -
制造商
Manufacturer		 ON Semiconductor(安森美) ON Semiconductor(安森美) ON Semiconductor(安森美) -
产品种类
Product Category		 Bipolar Transistors - BJT Bipolar Transistors - BJT Bipolar Transistors - BJT -
RoHS Details Details Details -
安装风格
Mounting Style		 Through Hole Through Hole Through Hole -
封装 / 箱体
Package / Case		 TO-92-3 Kinked Lead TO-92-3 TO-92-3 Kinked Lead -
Transistor Polarity PNP PNP PNP -
Configuration Single Single Single -
Collector- Emitter Voltage VCEO Max - 80 V - 80 V - 80 V -
Collector- Base Voltage VCBO - 100 V - 100 V - 100 V -
Emitter- Base Voltage VEBO - 5 V - 5 V - 5 V -
Collector-Emitter Saturation Voltage - 0.5 V - 0.5 V - 0.5 V -
Maximum DC Collector Current 1 A 1 A 1 A -
Gain Bandwidth Product fT 100 MHz 100 MHz 100 MHz -
最小工作温度
Minimum Operating Temperature		 - 65 C - 65 C - 65 C -
最大工作温度
Maximum Operating Temperature		 + 150 C + 150 C + 150 C -
DC Current Gain hFE Max 160 160 160 -
高度
Height		 4.7 mm 4.7 mm 5.33 mm -
长度
Length		 4.7 mm 4.7 mm 5.2 mm -
宽度
Width		 3.93 mm 3.93 mm 4.19 mm -
Continuous Collector Current - 1 A - 1 A - 1 A -
DC Collector/Base Gain hfe Min 40 40 40 -
Pd-功率耗散
Pd - Power Dissipation		 1 W 1 W 1 W -
工厂包装数量
Factory Pack Quantity		 2000 1000 2000 -
单位重量
Unit Weight		 0.008466 oz 0.006314 oz 0.008466 oz -
GD32E231学习3:SPI驱动OLED
之前是使用IO口来模拟SPI驱动OLED的，IO口的速度毕竟比SPI慢，刷新的时候会有明显的延时，...
wudianjun2001 GD32 MCU
STM32菜鸟之"零耗时键盘"及"疯狗"C++演示程序包
/*----------------------------------------------...
jiangyebula stm32/stm8
IAR的工程路径和头文件路径的配置问题
之前有多次受到这个问题的困扰，为了一劳永逸的解决问题，将可能出现的问题进行了总结。 解决方法： ...
fish001 微控制器 MCU
STM32 CAN的使用
大家好，新人向大家请教一个问题，望赐教。 STM32的CAN有过滤报文功能，因为我需要的报文不多...
lihai813 stm32/stm8
Cyclone V开发板申请
项目名称为“基于FPGA的激光键盘开发”。基于fpga的视频采集信号与处理，摄像头采集数据，交予FP...
kira王子 FPGA/CPLD
什么是多播mac
多播mac是指第40位为1的mac还是指第一个字节为1的地址，比如一个mac地址存放到一个uchar...
yelingxin 嵌入式系统
热门器件
热门资源推荐
新手入门摄像头-第三篇：智能车摄像头基础知识扫盲 (1) 1000T.pdf 电子管资料数据手册 一种快速超宽带穿墙雷达成像算法 单片机在电路板数控钻孔机中的应用 23DFP4.pdf 电子管资料数据手册 伺服箱体的电磁屏蔽设计 智能非接触红外体温计，可语音播报和OLED实时显示 立锜电源的DVR/IPC解决方案 Custom layout tips STM32F4开发指南-库函数版本V1.1
存储测试之AS SSD Benchmark 普源DS1000Z和DS2000A系列示波器带宽及选件破解 IMX6-A9系列：显示功能测试 A口转typeC口问题 电路识图31-测量电路原理分析 谁有水池水泵自动控制方案 ZCC5503 -18V 1A 6uA低静态功耗 同步降压控制器 《电子硬件工程师入职图解手册 硬件知识篇》初始此书1 EEWORLD大学堂----直播回放：TI嵌入式处理器最新产品发布会 串联谐振优良性越来越突出
PIC单片机控制的遥控防盗报警器电路 用数字电路CD4069制作的万能遥控轻触开关 红外线探测报警器 短波AM发射器电路设计图 使用ESP8266从NTP服务器获取时间并在OLED显示器上显示 开关电源的基本组成及工作原理 用NE555制作定时器 带有短路保护系统的5V直流稳压电源电路图 如何调制IC555振荡器 基于ICL296的大电流开关稳压器电源电路
器件捷径:
S0 S1 S2 S3 S4 S5 S6 S7 S8 S9 SA SB SC SD SE SF SG SH SI SJ SK SL SM SN SO SP SQ SR SS ST SU SV SW SX SY SZ T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 TA TB TC TD TE TF TG TH TI TJ TK TL TM TN TO TP TQ TR TS TT TU TV TW TX TY TZ U0 U1 U2 U3 U4 U6 U7 U8 UA UB UC UD UE UF UG UH UI UJ UK UL UM UN UP UQ UR US UT UU UV UW UX UZ V0 V1 V2 V3 V4 V5 V6 V7 V8 V9 VA VB VC VD VE VF VG VH VI VJ VK VL VM VN VO VP VQ VR VS VT VU VV VW VX VY VZ W0 W1 W2 W3 W4 W5 W6 W7 W8 W9 WA WB WC WD WE WF WG WH WI WJ WK WL WM WN WO WP WR WS WT WU WV WW WY X0 X1 X2 X3 X4 X5 X7 X8 X9 XA XB XC XD XE XF XG XH XK XL XM XN XO XP XQ XR XS XT XU XV XW XX XY XZ Y0 Y1 Y2 Y4 Y5 Y6 Y9 YA YB YC YD YE YF YG YH YK YL YM YN YP YQ YR YS YT YX Z0 Z1 Z2 Z3 Z4 Z5 Z6 Z8 ZA ZB ZC ZD ZE ZF ZG ZH ZJ ZL ZM ZN ZP ZR ZS ZT ZU ZV ZW ZX ZY
需要登录后才可以下载。
登录取消