BC817-16W/25W/40W
200mW, NPN Small Signal Transistor
Small Signal Diode
SOT-323
3 Collector
A
F
1 Base
2 Emitter
B
E
Features
Epitaxial planar die construction
Surface device type mounting
Moisture sensitivity level 1
Matte Tin(Sn) lead finish with Nickel(Ni) underplate
Pb free version and RoHS compliant
Green compound (Halogen free) with suffix "G" on
packing code and prefix "G" on date code
C
D
Mechanical Data
Case : SOT-323 small outline plastic package
Terminal: Matte tin plated, lead free., solderable
per MIL-STD-202, Method 208 guaranteed
High temperature soldering guaranteed: 260°C/10s
Weight : 0.005gram (approximately)
Dimensions
A
B
C
D
E
F
Unit (mm)
Min
1.90
1.15
0.25
1.20
2.00
0.80
Max
2.10
1.35
0.35
1.40
2.20
1.00
Unit (inch)
Min
0.075
0.045
0.010
0.047
0.079
0.031
Max
0.083
0.053
0.014
0.055
0.087
0.039
Ordering Information
Package
Part No.
Packing
3K / 7" Reel
3K / 7" Reel
3K / 7" Reel
3K / 7" Reel
3K / 7" Reel
3K / 7" Reel
Marking
6CR
6CS
6CT
6CR
6CS
6CT
SOT-323 BC817-16W RF
SOT-323 BC817-25W RF
SOT-323 BC817-40W RF
SOT-323 BC817-16W RFG
SOT-323 BC817-25W RFG
SOT-323 BC817-40W RFG
Suggested PAD Layout
0.65
0.026
1.6
0.063
0.8
0.031
0.8
0.031
Maximum Ratings and Electrical Characteristics
Rating at 25°C ambient temperature unless otherwise specified.
Maximum Ratings
Type Number
Power Dissipation
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Thermal Resistance,Junction to Ambient
Junction and Storage Temperature Range
1)Transistor mounted on an FR4 printed-circuit board.
Symbol
P
D
V
CBO
V
CEO
V
EBO
I
C
Rө
JA
T
J
, T
STG
Value
200
50
45
5
0.5
625
-65 to + 150
Units
mW
V
V
V
A
k/w
°C
Version : A11
BC817-16W/25W/40W
200mW, NPN Small Signal Transistor
Small Signal Diode
Electrical Characteristics
Type Number
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
at-Ic=10uA
at-Ic=10mA
at-Ic=10uA
at=V
CB
= 20V
at=V
CB
= 20V,T
J
=150℃
at=V
EB
= 5V
at-V
CE
=1V,-Ic=100mA
DC Current Gain
at-V
CE
=1V,-Ic=500mA
at-
Ic=500mA
I
C
= 10mA
V
CE
= 5V
-16W
-25W
-40W
I
B
= 50mA
f= 100MHz
h
FE
100
160
250
40
V
CE(sat)
f
T
-
100
0.7
-
V
MHz
250
400
600
-
-
-
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
Min
50
45
5
-
-
Max
-
-
-
100
5
100
Units
V
V
V
nA
uA
nA
Collector-Emitter saturation voltage
Transition frequency
Tape & Reel specification
TSC label
Top Cover Tape
Carieer Tape
Any Additional Label (If Required)
P0
d
T
A
C
B
P1
Item
Carrier width
Carrier length
Carrier depth
Sprocket hole
Reel outside diameter
Reel inner diameter
Feed hole width
Sprocke hole position
Punch hole position
Sprocke hole pitch
Embossment center
Overall tape thickness
Tape width
Reel width
Symbol
A
B
C
d
D
D1
D2
E
F
P0
P1
T
W
W1
Dimension(mm)
3.15 ±0.10
2.77 ±0.10
1.22 ±0.10
1.50 ± 0.10
178 ± 1
55 Min
13.0 ± 0.20
1.75 ±0.10
3.50 ±0.05
4.00 ±0.10
2.00 ±0.05
0.229 ±0.013
8.10 ±0.20
12.30 ±0.20
E
F
W
W1
D
D2
D1
Direction of Feed
Version : A11
BC817-16W/25W/40W
200mW, NPN Small Signal Transistor
Small Signal Diode
Rating and Characteristic Curves
Version : A11
BC817-16W/25W/40W
200mW, NPN Small Signal Transistor
Small Signal Diode
Rating and Characteristic Curves
Version : A11
