Plastic-Encapsulate Transistors
FEATURES
For general AF applications
High collector current
High current gain
Low collector-emitter saturation voltage
BC818-16
BC818-25
BC818-40
(NPN)
(NPN)
(NPN)
Marking
BC818-16
6E
BC818-25
6F
BC818-40
6G
MAXIMUM RATINGS (TA=25
unless otherwise noted)
Parameter
Collector-Base Voltage
DCollector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
Value
30
25
5
500
300
150
-55 to +150
Unit
V
1. BASE
V
2. EMITTER
V
3. COLLECTO
SOT-23
mA
mW
P
C
T
J
Tstg
ELECTRICAL CHARACTERISTICS (Tamb=25
unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter voltage
Collecter capactiance
Transition frequency
Symbol
VCB
VO
CE
VO
EB
O
ICB
O
IEB
O
hFE(1
)
hFE(2
)
VCE(sat)
VBE(sat)
VB
CE
ob
f
T
Test
conditions
Min
30
25
5
Max
Unit
V
V
V
IC= 10μA, IE=0
IC= 10mA, IB=0
IE= 10μA, IC=0
VCB= 25 V ,
VEB= 4V, IC=0
VCE= 1V, IC= 100mA
VCE= 1V, IC= 300mA
IC= 500mA, IB= 50mA
IC= 500mA, IB= 50mA
VCE=1V, IC= 500mA
VCB=10V ,f=1MHz
VCE= 5 V IC= 50Ma
,
f=100MHz
IE=0
0.1
0.1
100
60
0.7
1.2
1.2
6
170
630
μA
μA
V
V
V
pF
MHz
CLASSIFICATION OF
h
FE
6E
100-250
6F
160-400
6G
250-630
Rank
Range
Page:P2-P1
MAKO Semiconductor Co., Limited
4008-378-873
http://www.makosemi.hk/
Plastic-Encapsulate Transistors
BC818-16
BC818-25
Typical
BC818-40
Characteristics
MAKO Semiconductor Co., Limited
4008-378-873
http://www.makosemi.hk/
Page:P2-P2
