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BC846L-X-AE3-R

100 mA, 65 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
100 mA, 65 V, NPN, 硅, 小信号晶体管, TO-236AB

器件类别:半导体    分立半导体   

厂商名称:UNISONIC TECHNOLOGIES CO.,LTD

厂商官网:http://www.unisonic.com.tw/

下载文档
器件参数
参数名称
属性值
端子数量
3
晶体管极性
NPN
最大集电极电流
0.1000 A
最大集电极发射极电压
65 V
加工封装描述
塑料 PACKAGE-3
无铅
Yes
欧盟RoHS规范
Yes
中国RoHS规范
Yes
状态
ACTIVE
包装形状
矩形的
包装尺寸
SMALL OUTLINE
表面贴装
Yes
端子形式
GULL WING
端子涂层
端子位置
包装材料
塑料/环氧树脂
结构
单一的
元件数量
1
晶体管应用
开关
晶体管元件材料
最大环境功耗
0.2500 W
晶体管类型
通用小信号
最小直流放大倍数
110
额定交叉频率
100 MHz
文档预览
UNISONIC TECHNOLOGIES CO., LTD
BC846-BC850
SWITCHING AND AMPLIFIER
APPLICATION
FEATURES
* Suitable for automatic insertion in thick and thin-film circuits.
* Complement to BC856 … BC860
NPN SILICON TRANSISTOR
Lead-free:
BC846L/BC847L/BC848L/BC849L/BC850L
Halogen-free:
BC846G/BC847G/BC848G/BC849G/BC850G
ORDERING INFORMATION
Normal
BC846-x-AE3-R
BC847-x-AE3-R
BC848-x-AE3-R
BC849-x-AE3-R
BC850-x-AE3-R
BC846-x-AL3-R
BC847-x-AL3-R
BC848-x-AL3-R
BC849-x-AL3-R
BC850-x-AL3-R
BC846-x-AN3-R
BC847-x-AN3-R
BC848-x-AN3-R
BC849-x-AN3-R
BC850-x-AN3-R
Ordering Number
Lead Free
BC846L-x-AE3-R
BC847L-x-AE3-R
BC848L-x-AE3-R
BC849L-x-AE3-R
BC850L-x-AE3-R
BC846L-x-AL3-R
BC847L-x-AL3-R
BC848L-x-AL3-R
BC849L-x-AL3-R
BC850L-x-AL3-R
BC846L-x-AN3-R
BC847L-x-AN3-R
BC848L-x-AN3-R
BC849L-x-AN3-R
BC850L-x-AN3-R
Halogen Free
BC846G-x-AE3-R
BC847G-x-AE3-R
BC848G-x-AE3-R
BC849G-x-AE3-R
BC850G-x-AE3-R
BC846G-x-AL3-R
BC847G-x-AL3-R
BC848G-x-AL3-R
BC849G-x-AL3-R
BC850G-x-AL3-R
BC846G-x-AN3-R
BC847G-x-AN3-R
BC848G-x-AN3-R
BC849G-x-AN3-R
BC850G-x-AN3-R
Package
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-323
SOT-323
SOT-323
SOT-323
SOT-323
SOT-523
SOT-523
SOT-523
SOT-523
SOT-523
Pin Assignment
1
2
3
E
B
C
E
B
C
E
B
C
E
B
C
E
B
C
E
B
C
E
B
C
E
B
C
E
B
C
E
B
C
E
B
C
E
B
C
E
B
C
E
B
C
E
B
C
Packing
Tape Reel
Tape Reel
Tape Reel
Tape Reel
Tape Reel
Tape Reel
Tape Reel
Tape Reel
Tape Reel
Tape Reel
Tape Reel
Tape Reel
Tape Reel
Tape Reel
Tape Reel
www.unisonic.com.tw
Copyright © 2010 Unisonic Technologies Co., Ltd
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BC846-BC850
MARKING
BC846
BC847
BC848
NPN SILICON TRANSISTOR
BC849
BC850
X:
□:
Rank Code, refer to Classification of h
FE
L: Lead Free, G: Halogen Free
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 5
QW-R206-027,F
BC846-BC850
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING
(Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
VALUE
UNIT
BC846
80
V
Collector-Base Voltage
V
CBO
BC847 / BC850
50
V
BC848 / BC849
30
V
BC846
65
V
Collector-Emitter Voltage
V
CEO
BC847 / BC850
45
V
BC848 / BC849
30
V
BC846 / BC847
6
V
Emitter-Base Voltage
V
EBO
BC848 / BC849 / BC850
5
V
Collector Current (DC)
Ic
100
mA
SOT-23
310
mW
Collector Dissipation
P
D
SOT-323
200
mW
SOT-523
150
mW
Junction Temperature
T
J
+150
°C
Storage Temperature
T
STG
-40 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS
(Ta=25°C, unless otherwise specified)
PARAMETER
Collector Cut-Off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Collector-Base Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
Output Capacitance
Input Capacitance
BC846/BC847/BC848
BC849/BC850
Noise Figure
BC849
BC850
SYMBOL
TEST CONDITIONS
I
CBO
V
CB
=30V, I
E
=0
h
FE
V
CE
=5.0V, Ic=2.0mA
Ic=10mA,I
B
=0.5mA
V
CE(SAT)
Ic=100mA,I
B
=5.0mA
Ic=10mA,I
B
=0.5mA
V
BE(SAT)
Ic=100mA,I
B
=5.0mA
V
CE
=5.0V,Ic=2.0mA
V
BE(ON)
V
CE
=5.0V,Ic=10mA
V
CE
=5.0V,Ic=10mA
f
T
f=100MHz
Cob
V
CB
=10V, I
E
=0, f=1.0MHz
Cib
V
EB
=0.5V, I
C
=0, f=1.0MHz
V
CE
=5V, Ic=200μA,
f=1KHz, R
G
=2KΩ
NF
V
CE
=5V, I
C
=200μA,
R
G
=2KΩ, f=30~15000Hz
MIN
110
90
200
700
900
660
300
3.5
9
2
1.2
1.4
1.4
6
10
4
4
3
TYP
MAX UNIT
15
nA
800
250
mV
600
mV
mV
mV
700
mV
720
mV
MHz
pF
pF
dB
dB
dB
dB
580
CLASSIFICATION OF h
FE
RANK
RANGE
A
110-220
B
200-450
C
420-800
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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BC846-BC850
TYPICAL CHARACTERISTICS
NPN SILICON TRANSISTOR
Collector Current , I
C
(mA)
Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
10000
I
C
=10I
B
1000
V
BE(SAT)
DC Current Gain, h
FE
Base-Emitter on Voltage
100
V
CE
=2V
10
100
V
CE(sat)
1
10
1
10
100
1000
0.1
0.1 0.2 0.4
0.6
0.8 1.0
1.2
Collector Current, I
C
(mA)
Base-Emitter Voltage, V
BE
(V)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Current Gain-Bandwidth
Product, f
T
(MHz)
Capacitance, C
ob
(pF)
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BC846-BC850
NPN SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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