Small Signal Transistor
BC846W-G Thru. BC848W-G
(NPN)
RoHS Device
Features
- Power dissipation
P
CM
: 0.15W (@T
A
=25°C)
- Collector current
I
CM
: 0.1A
- Collector-base voltage
V
CBO
: BC846W=80V
BC847W=50V
BC848W=30V
SOT-323
0.087(2.20)
0.079(2.00)
3
0.053(1.35)
0.045(1.15)
Mechanical data
- Case: SOT-323, molded plastic.
- Terminals: solderable per MIL-STD-750,
method 2026.
- Approx. weight: 0.008 grams
1
0.055(1.40)
0.047(1.20)
2
0.006(0.15)
0.003(0.08)
0.043(1.10)
0.035(0.90)
0.096(2.45)
0.085(2.15)
Circuit diagram
- 1.BASE
- 2.EMITTER
- 3.COLLECTOR
0.016(0.40)
0.008(0.20)
0.004(0.10)
0.000(0.00)
3
0.018(0.46)
0.010(0.26)
Dimensions in inches and (millimeter)
1
2
Maximum Ratings
(at T
A
=25°C unless otherwise noted)
Parameter
BC846W-G
BC847W-G
BC848W-G
BC846W-G
BC847W-G
BC848W-G
BC846W-G / BC847W-G
BC848W-G
Symbol
Value
80
50
30
65
45
30
6
5
0.1
150
833
150
-55 to +150
Units
Collector-Base voltage
V
CBO
V
Collector-Emitter voltage
V
CEO
V
Emitter-Base voltage
V
EBO
V
Collector current -continuous
Collector power dissipation
Thermal resistance from junction to ambient
I
C
P
C
R
ΘJA
T
J
T
STG
A
mW
°C/W
°C
°C
Junction temperature range
Storage temperature range
Company reserves the right to improve product design , functions and reliability without notice.
QW-BTR35
REV:B
Page 1
Comchip Technology CO., LTD.
Small Signal Transistor
Electrical Characteristics
(at T
A
=25°C unless otherwise noted)
Parameter
Collector-base breakdown voltage
BC846W-G
BC847W-G
BC848W-G
BC846W-G
BC847W-G
BC848W-G
Symbol
V
CBO
Test Conditions
I
C
= 10μA , I
E
= 0
MIN
80
50
30
65
45
30
6
5
TYP
MAX
Unit
V
Collector-emitter breakdown voltage
Emitter-base break voltage
V
CEO
I
C
= 10mA , I
B
= 0
V
BC846W-G, BC847W-G
BC848W-G
V
EBO
I
CBO
I
E
= 1μA , I
C
= 0
V
CB
= 30V
V
15
90
150
270
nA
Collector cutoff current
DC current gain
BC846AW-G, 847AW-G, 848AW-G
BC846BW-G, 847BW-G, 848BW-G
BC847CW-G, 848CW-G
BC846AW-G, 847AW-G, 848AW-G
BC846BW-G, 847BW-G, 848BW-G
BC847CW-G, 848CW-G
V
CE
= 5V , I
C
= 10μA
h
FE
V
CE
= 5V , I
C
= 2mA
I
C
= 10mA , I
B
= 0.5mA
I
C
= 100mA ,I
B
= 5mA
I
C
= 10mA , I
B
= 0.5mA
I
C
= 100mA , I
B
= 5mA
V
CE
= 5V , I
C
= 2mA
V
CE
= 5V , I
C
= 10mA
V
CE
= 5V , I
C
= 10mA
f = 100MH
Z
V
CB
= 10V , f = 1MH
Z
V
CE
= 5V , I
C
= 0.2mA
f = 1KH
Z
, R
S
= 2K
Ω
BW = 200Hz
580
110
200
420
220
450
800
0.25
0.60
0.7
0.9
660
700
770
V
V
mV
MH
Z
4.5
10
10
4
pF
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Noise figure
BC846AW-G, 847AW-G, 848AW-G
BC846BW-G, 847BW-G, 848BW-G
BC847CW-G, 848CW-G
V
CE(sat)
V
BE(sat)
V
BE
(on)
f
T
C
ob
100
NF
dB
Company reserves the right to improve product design , functions and reliability without notice.
QW-BTR35
REV:B
Page 2
Comchip Technology CO., LTD.
Small Signal Transistor
Electrical Characteristic Curves (BC846W-G Thru. BC848W-G)
Fig.1 -
Static Characteristic
10
COMMON
-500uA
EMITTER
-450uA
Ta=25°C
Fig.2 - h
FE —
I
C
3000
Collector Current, I
C
(mA)
8
I
B
=20uA
I
B
=18uA
1000
6
I
B
=16uA
I
B
=14uA
I
B
=12uA
DC Current Gain, h
FE
4
100
I
B
=10uA
I
B
=8uA
2
I
B
=6uA
I
B
=4uA
I
B
=2uA
COMMON
-500uA
EMITTER
-450uA
V
CE
=5V
0
0
1
2
3
4
5
6
7
10
1
10
100
Collector-Emitter Voltage, V
CE
(V)
Collector Current , I
C
(mA)
Fig.3 - V
BEsat
—
I
C
1000
β=20
Fig.4 - V
CEsat
—
I
C
Collector- Emitter Saturation Voltage, (mV)
500
β=20
Base-Emitter Saturation Voltage
, VBEsat (mV)
800
100
600
400
200
0.1
10
0.1
1
10
100
1
10
100
Collector Current, I
C
(mA)
Collector Current, I
C
(mA)
Fig.5 - I
C
— V
BE
100
500
Fig.6 - F
T
— I
C
Ta=
25
10
Transition frequency, f
T
(MH
Z
)
Collector Current,
I
C
(mA)
Ta
=1
0
0°
C
°C
100
1
COMMON
-500uA
EMITTER
-450uA
V
CE
=5V
COMMON
-500uA
EMITTER
-450uA
V
CE
=5V
Ta=25°C
0.1
0
400
600
800
10
0.25
2
4
6
8
10
12
Base-Emitter Voltage,
V
BE
(mV)
Collector Current , I
C
(mA)
Company reserves the right to improve product design , functions and reliability without notice.
QW-BTR35
REV:B
Page 3
Comchip Technology CO., LTD.
Small Signal Transistor
Electrical Characteristic Curves (BC846W-G Thru. BC848W-G)
Fig.7 - Cob/Cib
100
—
V
CB
/V
EB
200
Fig.8 - P
C
— Ta
Collector Power Dissipation,
P
C
(mW)
f=1MHz
I
E
= 0/Ic =0
Ta = 25°C
Capacitance, C ( pF )
150
10
Cib
100
Cob
1.0
50
0.1
0.1
0
1
10
30
0
25
50
75
100
125
150
Reverse Voltage, V ( V )
Ambient Temperature, Ta (°C)
Company reserves the right to improve product design , functions and reliability without notice.
QW-BTR35
REV:B
Page 4
Comchip Technology CO., LTD.
Small Signal Transistor
Reel Taping Specification
P
0
P
1
d
Index hole
E
T
F
B
P
A
W
C
12
0
o
D
2
D
1
D
W
1
Trailer
.......
.......
10 pitches (min)
Device
.......
.......
.......
.......
Leader
.......
.......
10 pitches (min)
End
Start
Direction of Feed
SYMBOL
SOT-323
(mm)
(inch)
SYMBOL
SOT-323
(mm)
(inch)
A
2.25
±
0.05
0.089
±
0.002
B
2.55
±
0.05
0.100
±
0.002
C
1.19
±
0.05
0.047
±
0.002
d
1.55
+
0.10
0.061 + 0.004
D
178
±
2.00
7.008
±
0.079
D
1
54.40
±
1.00
2.142
±
0.039
D
2
13.00
±
1.00
0.512
±
0.039
E
1.75
±
0.10
0.069
±
0.004
F
3.50
±
0.10
0.138
±
0.002
P
4.00
±
0.10
0.158
±
0.004
P
0
4.00
±
0.10
0.158
±
0.004
P
1
2.00
±
0.10
0.079
±
0.004
W
8.00 + 0.30
- 0.10
0.315 + 0.012
- 0.004
W
1
12.30
±
1.00
0.484
±
0.039
Company reserves the right to improve product design , functions and reliability without notice.
QW-BTR35
REV:B
Page 5
Comchip Technology CO., LTD.
嵌入式系统
