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BC858C

100 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR
100 mA, 30 V, PNP, 硅, 小信号晶体管

器件类别：半导体    分立半导体   

厂商名称：Diodes

厂商官网：http://www.diodes.com/

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器件参数
参数名称
属性值
端子数量
3
晶体管极性
PNP
最大集电极电流
0.1000 A
最大集电极发射极电压
30 V
加工封装描述
ROHS COMPLIANT PACKAGE-3
无铅
Yes
欧盟RoHS规范
Yes
状态
ACTIVE
包装形状
RECTANGULAR
包装尺寸
SMALL OUTLINE
表面贴装
Yes
端子形式
GULL WING
端子涂层
NOT SPECIFIED
端子位置
DUAL
包装材料
PLASTIC/EPOXY
结构
SINGLE
元件数量
1
晶体管应用
AMPLIFIER
晶体管元件材料
SILICON
晶体管类型
GENERAL PURPOSE SMALL SIGNAL
最小直流放大倍数
420
额定交叉频率
250 MHz
文档预览
BC856A - BC858C
PNP SURFACE MOUNT SMALL SIGNAL TRANSISTOR
Features
•
•
•
•
Ideally Suited for Automatic Insertion
Complementary NPN Types Available (BC846-BC848)
For Switching and AF Amplifier Applications
Qualified to AEC-Q101 Standards for High Reliability
Lead, Halogen and Antimony Free, RoHS Compliant
"Green" Device (Notes 3 and 4)
E
A
C
B
B
TOP VIEW
E
D
G
H
K
J
L
M
C
SOT-23
Dim
A
B
C
D
E
G
H
J
K
L
M
α
Min
0.37
1.20
2.30
0.89
0.45
1.78
2.80
0.013
0.903
0.45
0.085
0°
Max
0.51
1.40
2.50
1.03
0.60
2.05
3.00
0.10
1.10
0.61
0.180
8°
•
Mechanical Data
•
•
•
•
•
•
•
•
Case: SOT-23
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Solderable per MIL-STD-202, Method 208
Lead Free Plating (Matte Tin Finish annealed over
Alloy 42 leadframe).
Pin Connections: See Diagram
Marking Codes: See Table Below & Diagram on Page 4
Ordering & Date Code Information: See Page 4
Weight: 0.008 grams (approximate)
Marking Code (Note 2)
Type
BC856A
BC856B
BC857A
BC857B
Marking
3A, K3A
3B, K3B
3E, K3V, K3A
3F, K3W, K3B
Type
BC857C
BC858A
BC858B
BC858C
Marking
3G, K3G
3J, K3J, K3A, K3V
3K, K3K, K3B, K3W
3L, K3L, K3G
C
•
B
E
All Dimensions in mm
Maximum Ratings
Collector-Base Voltage
@T
A
= 25°C unless otherwise specified
Symbol
BC856
BC857
BC858
BC856
BC857
BC858
V
CBO
Value
-80
-50
-30
-65
-45
-30
-5.0
-100
-200
-200
300
417
-65 to +150
Unit
V
Characteristic
Collector-Emitter Voltage
V
CEO
V
EBO
I
C
I
CM
I
EM
P
d
R
θJA
T
j
, T
STG
V
V
mA
mA
mA
mW
°C/W
°C
Emitter-Base Voltage
Collector Current
Peak Collector Current
Peak Emitter Current
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage Temperature Range
Notes:
1.
2.
3.
4.
Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001,
which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
Current gain subgroup “C” is not available for BC856.
No purposefully added lead. Halogen and Antimony Free.
Product manufactured with Data Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date Code
V9 are built with Non-Green Molding Compound and may contain Halogens or Sb
2
O
3
Fire Retardants.
DS11207 Rev. 19 - 2
1 of 4
www.diodes.com
BC856A-BC858C
© Diodes Incorporated
Electrical Characteristics
Characteristic
@T
A
= 25°C unless otherwise specified
Symbol
BC856
BC857
BC858
BC856
BC857
BC858
V
(BR)CBO
Min
-80
-50
-30
-65
-45
-30
-5
—
—
—
—
—
—
—
—
—
—
—
—
125
220
420
—
—
—
-600
—
—
—
—
—
—
100
—
—
Typ
—
—
—
—
—
—
—
200
330
600
2.7
4.5
8.7
18
30
60
-4
1.5x10
-4
2x10
-4
3x10
180
290
520
-75
-250
-700
-850
-650
—
—
—
—
—
—
200
3
2
Max
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
250
475
800
-300
-650
—
-750
-820
-15
-15
-15
-15
-4.0
—
—
10
Unit
V
Test Condition
I
C
= 10μA, I
B
= 0
Collector-Base Breakdown Voltage (Note 5)
Collector-Emitter Breakdown Voltage (Note 5)
V
(BR)CEO
V
(BR)EBO
h
fe
h
fe
h
fe
h
ie
h
ie
h
ie
h
oe
h
oe
h
oe
h
re
h
re
h
re
h
FE
V
CE(SAT)
V
BE(SAT)
V
BE(ON)
V
V
—
—
—
kΩ
kΩ
kΩ
µS
µS
µS
—
—
—
—
mV
mV
mV
nA
nA
nA
nA
µA
MHz
pF
dB
I
C
= 10mA, I
B
= 0
I
E
= 1μA, I
C
= 0
Emitter-Base Breakdown Voltage (Note 5)
H-Parameters
Small Signal Current Gain
Current Gain Group A
B
C
Current Gain Group A
B
C
Current Gain Group A
B
C
Current Gain Group A
B
C
Current Gain Group A
B
C
Input Impedance
V
CE
= -5.0V, I
C
= -2.0mA,
f = 1.0kHz
Output Admittance
Reverse Voltage Transfer Ratio
DC Current Gain (Note 5)
V
CE
= -5.0V, I
C
= -2.0mA
I
C
= -10mA, I
B
= -0.5mA
I
C
= -100mA, I
B
= -5.0mA
I
C
= -10mA, I
B
= -0.5mA
I
C
= -100mA, I
B
= -5.0mA
V
CE
= -5.0V, I
C
= -2.0mA
V
CE
= -5.0V, I
C
= -10mA
V
CE
= -80V
V
CE
= -50V
V
CE
= -30V
V
CB
= -30V
V
CB
= -30V, T
A
= 150°C
V
CE
= -5.0V, I
C
= -10mA,
f = 100MHz
V
CB
= -10V, f = 1.0MHz
V
CE
= -5.0V, I
C
= 200µA,
R
S
= 2kΩ, f = 1kHz,
Δf
= 200Hz
Collector-Emitter Saturation Voltage (Note 5)
Base-Emitter Saturation Voltage (Note 5)
Base-Emitter Voltage (Note 5)
Collector-Cutoff Current (Note 5)
BC856
BC857
BC858
I
CES
I
CES
I
CES
I
CBO
I
CBO
f
T
C
CBO
NF
Gain Bandwidth Product
Collector-Base Capacitance
Noise Figure
Notes:
5.
Short duration pulse test used to minimize self-heating effect.
DS11207 Rev. 19 - 2
2 of 4
www.diodes.com
BC856A-BC858C
© Diodes Incorporated
0.5
350
V
CE(SAT)
, COLLECTOR TO EMITTER
SATURATION VOLTAGE (V)
P
D
, POWER DISSIPATION (mW)
I
C
I
B
= 10
0.4
300
250
200
150
100
50
0
0
25
75 100 125 150 175
T
A
, AMBIENT TEMPERATURE (°C)
Fig. 1, Max Power Dissipation vs
Ambient Temperature
50
200
0.3
0.2
T
A
= 25°C
T
A
= 150°C
0.1
T
A
= -50°C
0
0.1
1
10
100
1000
I
C
, COLLECTOR CURRENT (mA)
Fig. 2 Collector Emitter Saturation Voltage
vs. Collector Current
1000
V
CE
= 5V
f
t
, GAIN BANDWIDTH PRODUCT (MHz)
0.5
DC CURRENT GAIN (NORMALIZED)
0.4
0.3
100
0.2
h
FE,
0.1
0
0.1
1.0
10
100
I
C
, COLLECTOR CURRENT (mA)
Fig. 3, DC Current Gain vs. Collector Current
10
1
10
100
I
C
, COLLECTOR CURRENT (mA)
Fig. 4, Gain Bandwidth Product vs Collector Current
DS11207 Rev. 19 - 2
3 of 4
www.diodes.com
BC856A-BC858C
© Diodes Incorporated
Ordering Information
(Note 6)
Device*
BC85xx-7-F
*
Notes:
xx = device type, e.g. BC856A-7-F.
6.
For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Packaging
SOT-23
Shipping
3000/Tape & Reel
Marking Information
XXX
XXX = Product Type Marking Code (See Page 1), e.g. K3A = BC856A
YM = Date Code Marking
Y = Year ex: T = 2006
M = Month ex: 9 = September
Date Code Key
Year
Code
Month
Code
YM
1998
J
Jan
1
1999
K
Feb
2
2000
L
2001
M
Mar
3
2002
N
Apr
4
2003
P
May
5
2004
R
Jun
6
2005
S
2006
T
Jul
7
2007
U
Aug
8
2008
V
Sep
9
2009
W
Oct
O
2010
X
2011
Y
Nov
N
2012
Z
Dec
D
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages.
LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
DS11207 Rev. 19 - 2
4 of 4
www.diodes.com
BC856A-BC858C
© Diodes Incorporated
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参数对比
与BC858C相近的元器件有：BC856B、BC857B、BC85xx-7-F、BC856A、BC856A_2、BC857A。描述及对比如下：
型号 BC858C BC856B BC857B BC85xx-7-F BC856A BC856A_2 BC857A
描述 100 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR 100 mA, 65 V, PNP, Si, SMALL SIGNAL TRANSISTOR 10 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR 100 mA, 65 V, PNP, Si, SMALL SIGNAL TRANSISTOR 100 mA, 65 V, PNP, Si, SMALL SIGNAL TRANSISTOR 100 mA, 65 V, PNP, Si, SMALL SIGNAL TRANSISTOR 100 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR
端子数量 3 3 3 3 3 3 3
晶体管极性 PNP PNP PNP PNP PNP PNP PNP
最大集电极电流 0.1000 A 0.1000 A 0.0100 A 0.1000 A 0.1000 A 0.1000 A 0.1000 A
最大集电极发射极电压 30 V 65 V 45 V 65 V 65 V 65 V 45 V
状态 ACTIVE TRANSFERRED ACTIVE ACTIVE ACTIVE ACTIVE ACTIVE
包装形状 RECTANGULAR 矩形的 矩形的 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
包装尺寸 SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
表面贴装 Yes Yes Yes Yes Yes Yes Yes
端子形式 GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING
端子位置 DUAL 双 双 DUAL DUAL DUAL DUAL
包装材料 PLASTIC/EPOXY 塑料/环氧树脂 塑料/环氧树脂 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
结构 SINGLE 单一的 单一的 SINGLE SINGLE SINGLE SINGLE
元件数量 1 1 1 1 1 1 1
晶体管元件材料 SILICON 硅 硅 SILICON SILICON SILICON SILICON
晶体管类型 GENERAL PURPOSE SMALL SIGNAL 通用小信号 通用小信号 GENERAL PURPOSE SMALL SIGNAL GENERAL PURPOSE SMALL SIGNAL GENERAL PURPOSE SMALL SIGNAL GENERAL PURPOSE SMALL SIGNAL
额定交叉频率 250 MHz 150 MHz 250 MHz 150 MHz 150 MHz 150 MHz 200 MHz
加工封装描述 ROHS COMPLIANT PACKAGE-3 SOT-23, 3 PIN - SOT-23, 3 PIN SOT-23, 3 PIN SOT-23, 3 PIN ROHS COMPLIANT PACKAGE-3
晶体管应用 AMPLIFIER - 放大器 SWITCHING SWITCHING SWITCHING AMPLIFIER
最小直流放大倍数 420 - 210 125 125 125 110
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器件捷径:
00 01 02 03 04 05 06 07 08 09 0A 0C 0F 0J 0L 0M 0R 0S 0T 0Z 10 11 12 13 14 15 16 17 18 19 1A 1B 1C 1D 1E 1F 1H 1K 1M 1N 1P 1S 1T 1V 1X 1Z 20 21 22 23 24 25 26 27 28 29 2A 2B 2C 2D 2E 2F 2G 2K 2M 2N 2P 2Q 2R 2S 2T 2W 2Z 30 31 32 33 34 35 36 37 38 39 3A 3B 3C 3D 3E 3F 3G 3H 3J 3K 3L 3M 3N 3P 3R 3S 3T 3V 40 41 42 43 44 45 46 47 48 49 4A 4B 4C 4D 4M 4N 4P 4S 4T 50 51 52 53 54 55 56 57 58 59 5A 5B 5C 5E 5G 5H 5K 5M 5N 5P 5S 5T 5V 60 61 62 63 64 65 66 67 68 69 6A 6C 6E 6F 6M 6N 6P 6R 6S 6T 70 71 72 73 74 75 76 77 78 79 7A 7B 7C 7M 7N 7P 7Q 7V 7W 7X 80 81 82 83 84 85 86 87 88 89 8A 8D 8E 8L 8N 8P 8S 8T 8W 8Y 8Z 90 91 92 93 94 95 96 97 98 99 9A 9B 9C 9D 9F 9G 9H 9L 9S 9T 9W
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