DISCRETE SEMICONDUCTORS
DATA SHEET
M3D425
BC856F; BC857F; BC858F series
PNP general purpose transistors
Preliminary specification
Supersedes data of 1998 Nov 10
1999 May 21
Philips Semiconductors
Preliminary specification
PNP general purpose transistors
FEATURES
•
Power dissipation comparable to SOT23
•
Low current (max. 100 mA)
•
Low voltage (max. 65 V).
APPLICATIONS
•
General purpose switching and amplification especially
in portable equipment.
DESCRIPTION
PNP transistor encapsulated in an ultra small SC-89
(SOT490) plastic SMD package.
NPN complements: BC846F, BC847F and BC848F series.
MARKING
TYPE
NUMBER
BC856AF
BC856BF
BC857AF
BC857BF
MARKING
CODE
3A
3B
3E
3F
TYPE
NUMBER
BC857CF
BC858AF
BC858BF
BC858CF
MARKING
CODE
3G
3J
3K
3L
BC856F; BC857F; BC858F series
PINNING
PIN
1
2
3
base
emitter
collector
DESCRIPTION
handbook, halfpage
3
3
1
2
MAM411
1
Top view
2
Fig.1
Simplified outline (SC-89; SOT490) and
symbol.
1999 May 21
2
Philips Semiconductors
Preliminary specification
PNP general purpose transistors
BC856F; BC857F; BC858F series
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
CBO
PARAMETER
collector-base voltage
BC856AF; BC856BF
BC857AF; BC857BF; BC857CF
BC858AF; BC858BF; BC858CF
V
CEO
collector-emitter voltage
BC856AF; BC856BF
BC857AF; BC857BF; BC857CF
BC858AF; BC858BF; BC858CF
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
Note
1. Transistor mounted on an FR4 printed-circuit board.
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
T
amb
≤
25
°C;
note 1
open collector
open base
−
−
−
−
−
−
−
−
−65
−
−65
−65
−45
−30
−5
−100
−200
−100
250
+150
150
+150
V
mA
mA
mA
mW
°C
°C
°C
CONDITIONS
open emitter
−
−
−
−80
−50
−30
V
V
V
MIN.
MAX.
UNIT
1999 May 21
3
Philips Semiconductors
Preliminary specification
PNP general purpose transistors
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
I
EBO
h
FE
PARAMETER
collector cut-off current
emitter cut-off current
DC current gain
BC856AF; BC857AF; BC858AF
BC856BF; BC857BF; BC858BF
BC857CF; BC858CF
V
CEsat
V
BE
C
c
f
T
F
Note
1. Pulse test: t
p
≤
300
µs; δ ≤
0.02.
collector-emitter saturation voltage
base-emitter voltage
collector capacitance
transition frequency
noise figure
PARAMETER
thermal resistance from junction to ambient
BC856F; BC857F; BC858F series
CONDITIONS
in free air; note 1
VALUE
500
UNIT
K/W
CONDITIONS
I
E
= 0; V
CB
=
−30
V
I
E
= 0; V
CB
=
−30
V; T
j
= 150
°C
I
C
= 0; V
EB
=
−5
V
I
C
=
−2
mA; V
CE
=
−5
V
−
−
−
MIN.
MAX.
−15
−5
−100
250
475
800
−200
−400
−750
−820
2.5
−
10
UNIT
nA
µA
nA
125
220
420
I
C
=
−10
mA; I
B
=
−0.5
mA
I
C
=
−100
mA; I
B
=
−5
mA; note 1
I
C
=
−2
mA; V
CE
=
−5
V
I
C
=
−10
mA; V
CE
=
−5
V
I
E
= i
e
= 0; V
CB
=
−10
V; f = 1 MHz
I
C
=
−10
mA; V
CE
=
−5
V; f = 100 MHz
I
C
=
−200 µA;
V
CE
=
−5
V; R
S
= 2 kΩ;
f = 1 kHz; B = 220 Hz
−
−
−600
−
−
100
−
mV
mV
mV
mV
pF
MHz
dB
1999 May 21
4
Philips Semiconductors
Preliminary specification
PNP general purpose transistors
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
BC856F; BC857F; BC858F series
SOT490
D
B
E
A
X
HE
v
M
A
3
A
1
e1
e
bp
2
w
M
B
Lp
detail X
c
0
1
scale
2 mm
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
0.8
0.6
b
p
0.33
0.23
c
0.2
0.1
D
1.7
1.5
E
0.95
0.75
e
1.0
e
1
0.5
H
E
1.7
1.5
L
p
0.5
0.3
v
0.1
w
0.1
OUTLINE
VERSION
SOT490
REFERENCES
IEC
JEDEC
EIAJ
SC-89
EUROPEAN
PROJECTION
ISSUE DATE
98-10-23
1999 May 21
5
