UNISONIC TECHNOLOGIES CO., LTD
BCP68
NPN MEDIUM POWER
TRANSISTOR
FEATURES
NPN SILICON TRANSISTOR
* High current (max. 1 A)
* Low voltage (max. 20 V).
* Complementary to UTC BCP69
1
APPLICATIONS
SOT-223
* General purpose switching and amplification under high current
conditions.
ORDERING INFORMATION
Ordering Number
BCP68G-xx-AA3-R
Package
SOT-223
E: Emitter
Pin Assignment
1
2
3
B
C
E
Packing
Tape Reel
Note:
Pin Assignment: B: Base
C: Collector
MARKING
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BCP68
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS
(T
A
=25C , unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage (Open Emitter)
V
CBO
32
V
Collector-Emitter Voltage (Open Base)
V
CEO
20
V
Emitter-Base Voltage (Open Collector)
V
EBO
5
V
1
A
DC
I
C
Collector Current
Peak
I
CM
2
A
Peak Base Current
I
BM
200
mA
Total Power Dissipation (T
A
≤
25℃)
P
D
1.35
W
Junction Temperature
T
J
150
℃
Operating Temperature
T
OPR
-45 ~ +150
℃
Storage Temperature
T
STG
-65 ~ +150
℃
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
SYMBOL
θ
JA
RATINGS
91
UNIT
℃/W
PARAMETER
Junction To Ambient
ELECTRICAL CHARACTERISTICS
(T
J
= 25℃, unless otherwise specified.)
SYMBOL
TEST CONDITIONS
V
CE(SAT)
I
C
= 1A, I
B
=100mA
I
C
= 5mA, V
CE
= 10V
V
BE
I
C
= 1A, V
CE
= 1V
I
E
= 0, V
CB
= 25V
I
CBO
I
E
= 0, V
CB
= 25V, T
J
= 150℃
I
EBO
I
C
= 0, V
EB
= 5V
I
C
= 5mA, V
CE
= 10V
h
FE
I
C
= 500mA, V
CE
= 1V
I
C
= 1A, V
CE
= 1V
C
C
I
E
= i
e
= 0, V
CB
= 5V, f = 1MHz
f
T
I
C
= -10mA, V
CE
= -5V, f = 100MHz
h
FE1
|I
C
| = 0.5A, |V
CE
| = 1V
h
FE2
MIN
TYP MAX UNIT
500 mV
620
mV
1
V
100
nA
10
µA
100
nA
375
48
40
1.6
pF
MHz
PARAMETER
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector Capacitance
Transition Frequency
DC Current Gain Ratio of the
Complementary Pairs
50
85
60
CLASSIFICATION OF h
FE
RANK
RANGE
16
100~250
25
160~375
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BCP68
TYPICAL CHARACTERISTIC
DC Current Gain (Typical Values)
300
250
V
CE
= 1V
NPN SILICON TRANSISTOR
200
h
FE
150
100
50
0
-10
-1
1
10
I
C
(mA)
10
2
10
3
10
4
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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www.unisonic.com.tw
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