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BCP69L-25-AA3-E-R

500 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR
500 mA, 45 V, NPN, 硅, 小信号晶体管

器件类别:半导体    分立半导体   

厂商名称:UNISONIC TECHNOLOGIES CO.,LTD

厂商官网:http://www.unisonic.com.tw/

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器件参数
参数名称
属性值
端子数量
3
晶体管极性
NPN
最大集电极电流
0.5000 A
最大集电极发射极电压
45 V
加工封装描述
SOT-23, 3 PIN
状态
CONSULT MFR
包装形状
矩形的
包装尺寸
SMALL OUTLINE
表面贴装
Yes
端子形式
GULL WING
端子涂层
锡 铅
端子位置
包装材料
塑料/环氧树脂
结构
单一的
元件数量
1
晶体管元件材料
最大环境功耗
0.2500 W
晶体管类型
通用小信号
最小直流放大倍数
100
额定交叉频率
100 MHz
文档预览
UNISONIC TECHNOLOGIES CO., LTD
BC817
NPN GENERAL PURPOSE
AMPLIFIER
Description
The UTC
BC817
is designed for general purpose medium power
amplifiers and switches requiring collector currents to 1.2A.
2
3
NPN EPITAXIAL SILICON TRANSISTOR
1
SOT-23
*Pb-free plating product number:BC817L
PIN CONFIGURATION
PIN NO.
PIN NAME
1
EMITTER
2
BASE
3
COLLECTOR
ORDERING INFORMATION
Order Number
Normal
Lead Free Plating
BC817-16-AE3-R
BC817L-16-AE3-R
BC817-25-AE3-R
BC817L-25-AE3-R
BC817-40-AE3-R
BC817L-40-AE3-R
Package
SOT-23
SOT-23
SOT-23
Packing
Tape & Reel
Tape & Reel
Tape & Reel
MARKING
BC817-16
BC817-25
BC817-40
6A
6B
6C
www.unisonic.com.tw
Copyright © 2005 Unisonic Technologies Co., LTD
1
QW-R206-025.B
BC817
PARAMETER
NPN EPITAXIAL SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING
(Ta=25°C, unless otherwise specified)
RATINGS
UNIT
Collector-Emitter Voltage
45
V
Collector-Base Voltage
50
V
Emitter-Base Voltage
5.0
V
Collector Current -Continuous
1.5
A
350
mW
Power Dissipation
P
D
2.8
mW/°C
Derate above 25°C
Junction Temperature
T
J
150
Storage Temperature
T
STG
-40 ~ +150
Note 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. The device is guaranteed to meet performance specification within 0℃~+70
operating temperature range
and assured by design from –20℃~+85℃.
SYMBOL
V
CEO
V
CES
V
EBO
I
C
THERMAL CHARACTERISTICS
(Ta=25°C, unless otherwise specified)
CHARACTERISTIC
Thermal Resistance, Junction to Ambient
Note: Device mounted on FR-4 PCB 40mm×40mm×1.5mm.
SYMBOL
θ
JA
RATING (Note)
350
UNIT
°C/W
ELECTRICAL CHARACTERISTICS
(Ta=25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Cutoff Current
ON CHARACTERISTICS
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
h
FE1
*
h
FE2
V
CE(SAT)
V
BE(ON)
Ic=100mA,V
CE
=1.0V
Ic=500mA, V
CE
=1.0V
Ic=500mA,I
B
=50Ma
Ic=500mA, V
CE
=1.0V
See Classification
40
0.7
1.2
SYMBOL
V
(BR)CEO
V
(BR)CES
V
(BR)EBO
I
CBO
TEST CONDITIONS
I
C
=10mA, I
B
=0
I
C
=100µA,I
E
=0
I
E
=10µA, Ic=0
V
CB
=20V
V
CB
=20V,T
a
=150°C
MIN TYP MAX UNIT
45
50
5
100
5
V
V
V
nA
µA
V
V
CLASSIFICATION OF hFE1*
RANK
RANGE
BC817-16
100-250
BC817-25
160-400
BC817-40
250-600
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2
QW-R206-025.B
BC817
TYPICAL CHARACTERISTICS
Typical Pulsed Current Gain vs Collector Current
Typical Pulsed Current Gain, h
FE
NPN EPITAXIAL SILICON TRANSISTOR
Collector-Emitter Saturation Voltage vs Collector Current
Collector-Emitter Voltage, V
CESAT
(V)
500
V
CE
= 5V
400
300
200
100
0
0.001
0.01
0.1
1 2
Collector Current, I
C
(A)
-40℃
125℃
25℃
0.6
0.5
0.4
0.3
0.2
0.1
0
ß
= 10
125℃
25℃
-40℃
0.01
0.1
Collector Current, I
C
(A)
1
3
Base-Emitter Saturation Voltage vs Collector Current
Base-Emitter On Voltage, V
BE(ON)
(V)
Base-Emitter Voltage, V
BE(SAT)
(V)
Base-Emitter On Voltage vs Collector Current
1
0.8
0.6
0.4
0.2
0.001
-40℃
25℃
150℃
V
CC
= 5V
0.01
0.1
1
1.2
ß
= 10
1
-40℃
0.8
0.6
0.4
0.2
1
10
100
1000
Collector Current, I
C
(mA)
25℃
125℃
Collector Current, I
C
(A)
Collector-Cutoff Current vs Ambient Temperature
Collector Current , I
CBO
(nA)
Collector-Base Capacitance vs Collector-Base Voltage
Collector-BasE Capacitance, Cc (pF)
100
V
CB
= 40V
10
1
0.1
40
30
20
10
0
0
4
8
12 16
20
24
28
25
50
75
100
125
150
Ambient Temperature, T
A
(℃)
Collector-Base Voltage, V
CB
(V)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3
QW-R206-025.B
BC817
TYPICAL CHARACTERISTICS(cont.)
Gain Bandwidth Pro Duct, h
FE
(MHz)
NPN EPITAXIAL SILICON TRANSISTOR
V
CE
= 10V
400
300
200
100
0
1
10
100
1000
Collector Current, I
C
(mA)
Gain Bandwidth Product vs Collector Current
Power Dissipation, P
D
(mW)
500
350
300
250
200
150
100
50
0
0
25
50
75
100 125 150
Temperature (℃)
Power Dissipation vs Ambient Temperature
SOT-23
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
4
QW-R206-025.B
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