Data Sheet
BCR6CM-12LB
600V - 6A - Triac
Medium Power Use
Features
•
I
T (RMS)
: 6 A
•
V
DRM
: 600 V
•
I
FGTI
, I
RGTI
, I
RGT III
: 30 mA (20 mA)
Note6
•
Tj: 150°C
•
Non-insulated Type
•
Planar Passivation Type
R07DS1027EJ0200
Rev.2.00
Jun. 28, 2018
Outline
RENESAS Package code: PRSS0004AG-A
(Package name: TO-220AB)
4
RENESAS Package code: PRSS0004AT-A
(Package name: TO-220ABA)
4
2, 4
1. T
1
Terminal
2. T
2
Terminal
3. Gate Terminal
4. T
2
Terminal
3
1
1
2
1
2
3
3
Application
Power supply, motor control, heater control and other general purpose AC control applications.
Maximum Ratings
Parameter
Repetitive peak off-state voltage
Note1
Non-repetitive peak off-state voltage
Note1
Parameter
RMS on-state current
Surge on-state current
I
2
t for fusion
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction Temperature
Storage temperature
Symbol
I
T (RMS)
I
TSM
I
2
t
P
GM
P
G (AV)
V
GM
I
GM
Tj
Tstg
Symbol
V
DRM
V
DSM
Ratings
6
60
15
5
0.5
10
2
–40
to +150
–40
to +150
Unit
A
A
A
2
s
W
W
V
A
C
C
Voltage class
12
600
720
Conditions
Commercial frequency, sine full wave
360conduction, Tc = 128C
Note3
60 Hz sinewave 1 full cycle, peak value,
non-repetitive
Value corresponding to 1 cycle of half wave
60 Hz, surge on-state current
Unit
V
V
R07DS1027EJ0200 Rev.2.00
Jun. 28, 2018
Page 1 of 8
BCR6CM-12LB
Data Sheet
Electrical Characteristics
Parameter
Repetitive peak off-state current
On-state voltage
Gate trigger voltage
Note2
Gate trigger curent
Note2
Gate non-trigger voltage
Thermal resistance
Critical-rate of rise of off-state
commutation voltage
Note5
Notes: 1.
2.
3.
4.
5.
6.
Symbol
I
DRM
V
TM
V
FGT
V
RGT
V
RGT
I
FGT
I
RGT
I
RGT
V
GD
R
th (j-c)
(dv/dt)c
Min.
—
—
—
—
—
—
—
—
0.2
0.1
—
10
1
Typ.
—
—
—
—
—
—
—
—
—
—
—
—
—
Max.
2.0
1.7
1.5
1.5
1.5
30
Note6
30
Note6
30
Note6
—
—
2.5
—
—
Unit
mA
V
V
V
V
mA
mA
mA
V
V
C/W
V/s
V/s
Tj = 25C, V
D
= 6 V, R
L
= 6
,
R
G
= 330
Tj = 125C, V
D
= 1/2 V
DRM
Tj = 150C, V
D
= 1/2 V
DRM
Junction to case
Note3 Note4
Tj = 125C
Tj = 150C
Test conditions
Tj = 150C, V
DRM
applied
Tc = 25C, I
TM
= 9 A,
instantaneous measurement
Tj = 25C, V
D
= 6 V, R
L
= 6
,
R
G
= 330
Gate open.
Measurement using the gate trigger characteristics measurement circuit.
Case temperature is measured at the T
2
tab 1.5 mm away from the molded case.
The contact thermal resistance R
th(c-f)
in case of greasing is 1.0C /W.
Test conditions of the critical-rate of rise of off-state commutation voltage is shown in the table below.
High sensitivity (I
GT
20 mA) is also available. (I
GT
item:1)
Test conditions
Commutating voltage and current waveforms
(inductive load)
Supply Voltage
Main Current
Main Voltage
(dv/dt)c
1. Junction temperature
Tj = 125°C/150°C
2. Rate of decay of on-state commutating current
(di/dt)c =
–3.0
A/ms
3. Peak off-state voltage
V
D
= 400 V
Time
(di/dt)c
Time
Time
V
D
R07DS1027EJ0200 Rev.2.00
Jun. 28, 2018
Page 2 of 8
BCR6CM-12LB
Data Sheet
Performance Curves
Maximum On-State Characteristics
10
2
100
Rated Surge On-State Current
Surge On-State Current (A)
On-State Current (A)
80
10
1
Tj = 150°C
60
40
20
10
0
Tj = 25°C
10
-1
0
1
2
3
4
0
10
0
10
1
10
2
On-State Voltage (V)
Conduction Time (Cycles at 60Hz)
Gate Trigger Current (Tj = t°C)
×
100 (%)
Gate Trigger Current (Tj = 25°C)
Gate Characteristics (I, II and III)
V
GM
= 10V
10
1
P
G(AV)
= 0.5W
P
GM
= 5W
I
GM
= 2A
V
GT
= 1.5V
10
0
Gate Trigger Current vs.
Junction Temperature
10
3
Typical Example
Gate Voltage (V)
I
RGT III
10
2
I
FGT I
I
RGT I
10
1
-
I
FGT I
I
RGT I
, I
RGT III
10
2
V
GD
= 0.1V
10
3
10
4
10
1
10
1
- 40
0
40
80
120
160
Gate Current (mA)
Gate Trigger Voltage vs.
Junction Temperature
Typical Example
Junction Temperature (°C)
Gate Trigger Voltage (Tj = t°C)
×
100 (%)
Gate Trigger Voltage (Tj = 25°C)
Gate Trigger Current vs.
Gate Current Pulse Width
Gate Trigger Current (tw)
×
100 (%)
Gate Trigger Current (DC)
10
3
10
3
I
RGT III
Typical Example
I
RGT I
I
FGT I
10
2
10
2
10
1
- 40
0
40
80
120
160
10
1
10
0
10
1
10
2
Junction Temperature (°C)
Gate Current Pulse Width (s)
R07DS1027EJ0200 Rev.2.00
Jun. 28, 2018
Page 3 of 8
BCR6CM-12LB
Data Sheet
Maximum Transient Thermal Impedance
Characteristics (Junction to case)
Maximum Transient Thermal Impedance
Characteristics (Junction to ambient)
Transient Thermal Impedance (°C/W)
Transient Thermal Impedance (°C/W)
10
2
4
10
3
10
4
10
3
No Fins
3
10
2
2
10
1
1
10
0
0
-1
10
10
0
10
1
10
2
10
- 1
10
1
10
2
10
3
10
4
10
5
Conduction Time (Cycles at 60Hz)
Conduction Time (Cycles at 60Hz)
Maximum On-State Power Dissipation
16
160
Allowable Case Temperature vs.
RMS On-State Current
On-State Power Dissipation (W)
14
12
10
8
6
4
2
0
0
1
2
3
4
5
6
7
8
Case Temperature (°C)
140
120
100
Curves apply regardless
80 of conduction angle
60
40
360° Conduction
20 Resistive,
inductive loads
0
0
1
2
3
4
360° Conduction
Resistive,
inductive loads
5
6
7
8
RMS On-State Current (A)
Allowable Ambient Temperature vs.
RMS On-State Current
160
120
×120 ×t2.3
100
×100 ×t2.3
60
×60 ×t2.3
160
RMS On-State Current (A)
Allowable Ambient Temperature vs.
RMS On-State Current
Natural convection
No Fins
Curves apply regardless
of conduction angle
Resistive, inductive loads
120
100
80
60
40
20
0
0
All fins are black painted
aluminum and greased
Curves apply regardless
of conduction angle
Resistive, inductive loads
Natural convection
Ambient Temperature (°C)
8
Ambient Temperature (°C)
140
140
120
100
80
60
40
20
0
0
0.5
1.0
1.5
2.0
2.5
3.0
1
2
3
4
5
6
7
RMS On-State Current (A)
RMS On-State Current (A)
R07DS1027EJ0200 Rev.2.00
Jun. 28, 2018
Page 4 of 8
BCR6CM-12LB
Data Sheet
Repetitive Peak Off-State Current (Tj = t°C)
×100
(%)
Repetitive Peak Off-State Current (Tj = 25°C)
Repetitive Peak Off-State Current vs.
Junction Temperature
10
6
Breakover Voltage vs.
Junction Temperature
Breakover Voltage (Tj = t°C)
×
100 (%)
Breakover Voltage (Tj = 25°C)
Typical Example
160
Typical Example
140
120
100
10
5
10
4
80
60
40
20
0
- 40
0
40
80
120
160
10
3
10
2
- 40
0
40
80
120
160
Junction Temperature (°C)
Holding Current vs.
Junction Temperature
10
2
Distribution
Junction Temperature (°C)
Latching Current vs.
Junction Temperature
10
2
T
2
+, G-
Typical Example
Typical Example
10
1
Latching Current (mA)
Holding Current (mA)
10
1
Distribution
T
2
+, G+
T
2
- , G- Typical Example
10
0
- 40
0
40
80
120
160
V
D
=12V
10
0
- 40
0
40
80
120
160
Junction Temperature (°C)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage (Tj=125°C)
160
140
120
100
Typical Example
Tj = 125°C
III Quadrant
Junction Temperature (°C)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage (Tj=150°C)
160
140
120
100
80
Typical Example
Tj = 150°C
III Quadrant
Breakover Voltage (dv/dt = xV/s)
×
100 (%)
Breakover Voltage (dv/dt = 1V/s)
80
60
40
20
0
1
10
10
2
10
3
10
4
I Quadrant
Breakover Voltage (dv/dt = xV/s)
×
100 (%)
Breakover Voltage (dv/dt = 1V/s)
60
40
20
0
1
10
I Quadrant
10
2
10
3
10
4
Rate of Rise of Off-State Voltage (V/s)
Rate of Rise of Off-State Voltage (V/s)
R07DS1027EJ0200 Rev.2.00
Jun. 28, 2018
Page 5 of 8
