Data Sheet
BCR8FM-12LB
600V - 8A - Triac
Medium Power Use
Features
•
•
•
•
I
T (RMS)
: 8 A
V
DRM
: 600 V
Tj: 150 °C
I
FGTI
, I
RGTI
, I
RGT III
: 30 mA(20mA)
Note5
•
Insulated Type
•
Planar Passivation Type
•
Viso: 2000V
R07DS1186EJ0201
Rev.2.01
Feb. 19, 2019
Outline
RENESAS Package code: PRSS0003AG-A
(Package name: TO-220FP)
RENESAS Package code: PRSS0003AP-A
(Package name: TO-220FPA)
Ordering code
#BB0
Ordering code
#BG0
#BH0
2
1. T
1
Terminal
2. T
2
Terminal
3. Gate Terminal
3
1
1
2 3
1 2
3
Application
Motor control, Heater control, Power supply, Solid state relay, and other general purpose AC control applications.
Maximum Ratings
Parameter
Repetitive peak off-state voltage
Note1
Non-repetitive peak off-state
Parameter
RMS on-state current
voltage
Note1
Symbol
I
T (RMS)
Symbol
V
DRM
V
DSM
Ratings
8
Unit
A
Voltage class
12
600
720
Conditions
Commercial frequency, sine full wave
360conduction,
Tc = 114C (#BB0, #BH0)
Note2
Tc = 107C (#BG0)
Note2
50 Hz sinewave 1 full cycle, peak value,
non-repetitive
Value corresponding to 1 cycle of half wave
50 Hz, surge on-state current
Unit
V
V
Surge on-state current
I
2
t for fusion
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction Temperature
Storage temperature
Isolation voltage
Note7
I
TSM
I
2
t
P
GM
P
G (AV)
V
GM
I
GM
Tj
Tstg
V
iso
80
26
5
0.5
10
2
–40
to +150
–40
to +150
2000
A
A
2
s
W
W
V
A
C
C
V
Ta=25C, AC 1 minute,
T
1
•
T
2
•
G terminal to case
Notes: 1. Gate open.
2. Please refer to the Ordering Information.
R07DS1186EJ0201 Rev.2.01
Feb. 19, 2019
Page 1 of 8
BCR8FM-12LB
Data Sheet
Electrical Characteristics
Parameter
Repetitive peak off-state current
On-state voltage
Gate trigger voltage
Note3
Gate trigger curent
Note3
Gate non-trigger voltage
Thermal resistance
Symbol
I
DRM
V
TM
V
FGT
V
RGT
V
RGT
I
FGT
I
RGT
I
RGT
V
GD
R
th (j-c)
Min.
—
—
—
—
—
—
—
—
0.2
0.1
—
—
Critical-rate of rise of off-state
commutation voltage
Note5
Notes: 3.
4.
5.
6.
7.
(dv/dt)c
10
1
Typ.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Max.
2.0
1.6
1.5
1.5
1.5
30
Note6
30
Note6
30
Note6
—
—
3.6
4.3
—
—
Unit
mA
V
V
V
V
mA
mA
mA
V
C/W
C/W
V/s
Tj = 25C, V
D
= 6 V, R
L
= 6
,
R
G
= 330
Tj = 125C, V
D
= 1/2 V
DRM
Tj = 150C, V
D
= 1/2 V
DRM
Junction to case
Note4
(#BB0, #BH0)
Note2
Junction to case
Note4
(#BG0)
Note2
Tj = 125C
Tj = 150C
Test conditions
Tj = 150C, V
DRM
applied
Tc = 25C, I
TM
= 12 A,
instantaneous measurement
Tj = 25C, V
D
= 6 V, R
L
= 6
,
R
G
= 330
Measurement using the gate trigger characteristics measurement circuit.
The contact thermal resistance R
th(c-f)
in case of greasing is 0.5C/W.
Test conditions of the critical-rate of rise of off-state commutation voltage is shown in the table below.
High sensitivity (I
GT
20 mA) is also available. (I
GT
item:1)
Make sure that your finished product containing this device meets your safe isolation requirements.
For safety, it's advisable that heatsink is electrically floating.
Test conditions
Commutating voltage and current waveforms
(inductive load)
Supply Voltage
Main Current
Main Voltage
(dv/dt)c
1. Junction temperature
Tj = 125°C/150°C
2. Rate of decay of on-state commutating current
(di/dt)c =
–
4 A/ms
3. Peak off-state voltage
V
D
= 400 V
Time
(di/dt)c
Time
Time
V
D
R07DS1186EJ0201 Rev.2.01
Feb. 19, 2019
Page 2 of 8
BCR8FM-12LB
Data Sheet
Performance Curves
Maximum On-State Characteristics
10
2
100
Rated Surge On-State Current
Surge On-State Current (A)
On-State Current (A)
80
60
40
20
0
10
0
Tj = 150°C
10
1
Tj = 25°C
10
0
0
1
2
3
4
10
1
10
2
On-State Voltage (V)
Conduction Time (Cycles at 60Hz)
Gate Trigger Current vs.
Junction Temperature
10
3
Typical Example
V
GM
= 10V
10
1
P
G(AV)
= 0.5W
P
GM
= 5W
I
GM
= 2A
Gate Trigger Current (Tj = t°C)
×
100 (%)
Gate Trigger Current (Tj = 25°C)
Gate Characteristics (I, II and III)
Gate Voltage (V)
I
RGT I
V
GT
= 1.5V
10
0
10
2
I
FGT I
10
- 1
I
RGT III
10
1
- 40
I
FGT I
I
RGT I
, I
RGT III
10
2
V
GD
= 0.1V
10
3
10
4
10
1
0
40
80
120
160
Gate Current (mA)
Gate Trigger Voltage vs.
Junction Temperature
Junction Temperature (°C)
Gate Trigger Voltage (Tj = t°C)
×
100 (%)
Gate Trigger Voltage (Tj = 25°C)
Gate Trigger Current vs.
Gate Current Pulse Width
Gate Trigger Current (tw)
×
100 (%)
Gate Trigger Current (DC)
10
3
Typical Example
10
3
Typical Example
I
FGT I
I
RGT I
I
RGT III
10
2
10
2
10
1
- 40
0
40
80
120
160
10
1
10
0
10
1
10
2
Junction Temperature (°C)
Gate Current Pulse Width (s)
R07DS1186EJ0201 Rev.2.01
Feb. 19, 2019
Page 3 of 8
BCR8FM-12LB
Data Sheet
Maximum Transient Thermal Impedance
Characteristics (Junction to case)
Maximum Transient Thermal Impedance
Characteristics (Junction to ambient)
Transient Thermal Impedance (°C/W)
5
4
3
2
1
0
-1
10
#BB0,#BH0
#BG0
Transient Thermal Impedance (°C/W)
10
2
6
10
3
10
4
10
3
No Fins
10
2
10
1
10
0
10
0
10
1
10
2
10
- 1
10
1
10
2
10
3
10
4
10
5
Conduction Time (Cycles at 60Hz)
Conduction Time (Cycles at 60Hz)
Allowable Case Temperature vs.
RMS On-State Current
160
140
Maximum On-State Power Dissipation
16
On-State Power Dissipation (W)
14
12
360° Conduction
Resistive,
10
inductive loads
8
6
4
2
0
0
2
4
6
8
10
12
14
16
Curves apply regardless
of conduction angle
Case Temperature (°C)
120
100
80
#BB0,#BH0
#BG0
60
40
360° Conduction
20 Resistive,
inductive loads
0
0
2
4
6
8
10
12
14
16
RMS On-State Current (A)
Allowable Ambient Temperature vs.
RMS On-State Current
160
All fins are black painted
aluminum and greased
#BB0,#BH0
#BG0
100
×100 ×t2.3
60
×60 ×t2.3
160
RMS On-State Current (A)
Allowable Ambient Temperature vs.
RMS On-State Current
Natural convection
No Fins
Curves apply regardless
of conduction angle
Resistive, inductive loads
Ambient Temperature (°C)
120
100
80
Ambient Temperature (°C)
140
140
120
100
80
60
40
20
0
0
60 Curves apply
regardless of
40 conduction angle
Resistive,
20 inductive loads
Natural convection
0
0
2
4
6
8
10
12
14
16
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
RMS On-State Current (A)
RMS On-State Current (A)
R07DS1186EJ0201 Rev.2.01
Feb. 19, 2019
Page 4 of 8
BCR8FM-12LB
Data Sheet
Holding Current vs.
Junction Temperature
10
2
Typical Distribution
10
3
Latching Current vs.
Junction Temperature
Typical Distribution
Latching Current (mA)
Holding Current (mA)
III Quadrant
Typical Example
T
2
+,G -
Typical Example
10
2
10
1
10
1
T
2
+,G+
T
2
- ,G-
Typical Example
10
0
- 40
0
40
80
120
160
I Quadrant
Typical Example
V
D
=12V
10
0
- 40
0
40
80
120
160
Junction Temperature (°C)
Breakover Voltage vs.
Junction Temperature
Junction Temperature (°C)
Repetitive Peak Off-State Current vs.
Junction Temperature
10
6
Typical Example
160
140
120
100
80
60
40
20
0
- 40
0
40
Typical Example
Repetitive Peak Off-State Current (Tj = t°C)
×100
(%)
Repetitive Peak Off-State Current (Tj = 25°C)
Breakover Voltage (Tj = t°C)
×
100 (%)
Breakover Voltage (Tj = 25°C)
10
5
10
4
10
3
80
120
160
10
2
- 40
0
40
80
120
160
Junction Temperature (°C)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage (Tj=125°C)
160
140
120
100
Typical Example
Tj = 125°C
III Quadrant
Junction Temperature (°C)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage (Tj=150°C)
160
140
120
100
80
Typical Example
Tj = 150°C
III Quadrant
Breakover Voltage (dv/dt = xV/s)
×
100 (%)
Breakover Voltage (dv/dt = 1V/s)
80
60
40
20
0
1
10
I Quadrant
Breakover Voltage (dv/dt = xV/s)
×
100 (%)
Breakover Voltage (dv/dt = 1V/s)
60
40
20
0
1
10
I Quadrant
10
2
10
3
10
4
10
2
10
3
10
4
Rate of Rise of Off-State Voltage (V/s)
Rate of Rise of Off-State Voltage (V/s)
R07DS1186EJ0201 Rev.2.01
Feb. 19, 2019
Page 5 of 8
FPGA/CPLD
