MITSUBISHI SEMICONDUCTOR
〈TRIAC〉
BCR8PM
MEDIUM POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
BCR8PM
OUTLINE DRAWING
10.5 MAX
5.2
Dimensions
in mm
2.8
17
5.0
1.2
TYPE
NAME
VOLTAGE
CLASS
φ3.2±0.2
13.5 MIN
3.6
1.3 MAX
0.8
2.54
2.54
8.5
0.5
2.6
•
•
•
•
•
I
T (RMS)
........................................................................ 8A
V
DRM
..............................................................400V/600V
I
FGT
!
, I
RGT
!
, I
RGT
#
......................... 30mA (20mA)
V5
V
iso
........................................................................ 1500V
UL Recognized: File No. E80276
123
2
∗
Measurement point of
case temperature
1
1
T
1
TERMINAL
2
T
2
TERMINAL
3 3
GATE TERMINAL
TO-220F
APPLICATION
Switching mode power supply, light dimmer, electric flasher unit,
control of household equipment such as TV sets · stereo · refrigerator · washing machine · infrared
kotatsu · carpet, solenoid drivers, small motor control,
copying machine, electric tool,
other general purpose control applications
MAXIMUM RATINGS
Symbol
V
DRM
V
DSM
Parameter
Repetitive peak off-state voltage
V1
Non-repetitive peak off-state
voltage
V1
Voltage class
8
400
500
12
600
720
Unit
V
V
Symbol
I
T (RMS)
I
TSM
I
2t
P
GM
P
G (AV)
V
GM
I
GM
T
j
T
stg
—
V
iso
Parameter
RMS on-state current
Surge on-state current
I
2t
for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction temperature
Storage temperature
Weight
Isolation voltage
Typical value
Conditions
Commercial frequency, sine full wave 360° conduction, T
c
=88°C
60Hz sinewave 1 full cycle, peak value, non-repetitive
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
4.5
Ratings
8
80
26
5
0.5
10
2
–40 ~ +125
–40 ~ +125
2.0
1500
Unit
A
A
A
2
s
W
W
V
A
°C
°C
g
V
T
a
=25°C, AC 1 minute, T
1
· T
2
· G terminal to case
V1.
Gate open.
Feb.1999
MITSUBISHI SEMICONDUCTOR
〈TRIAC〉
BCR8PM
MEDIUM POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
ELECTRICAL CHARACTERISTICS
Symbol
I
DRM
V
TM
V
FGT
!
V
RGT
!
V
RGT
#
I
FGT
!
I
RGT
!
I
RGT
#
V
GD
R
th (j-c)
(dv/dt)
c
Gate non-trigger voltage
Thermal resistance
Critical-rate of rise of off-state
commutating voltage
Gate trigger
current
V2
Gate trigger voltage
V2
Parameter
Repetitive peak off-state current
On-state voltage
!
@
#
!
@
#
T
j
=125°C, V
D
=1/2V
DRM
Junction to
case
V4
T
j
=25°C, V
D
=6V, R
L
=6Ω, R
G
=330Ω
T
j
=25°C, V
D
=6V, R
L
=6Ω, R
G
=330Ω
Test conditions
T
j
=125°C, V
DRM
applied
T
c
=25°C, I
TM
=12A, Instantaneous measurement
Limits
Min.
—
—
—
—
—
—
—
—
0.2
—
V3
Typ.
—
—
—
—
—
—
—
—
—
—
—
Max.
2.0
1.6
1.5
1.5
1.5
30
V5
30
V5
30
V5
—
3.7
—
Unit
mA
V
V
V
V
mA
mA
mA
V
°C/
W
V/µs
V2.
Measurement using the gate trigger characteristics measurement circuit.
V3.
The critical-rate of rise of the off-state commutating voltage is shown in the table below.
V4.
The contact thermal resistance R
th (c-f)
in case of greasing is 0.5°C/W.
V5.
High sensitivity (I
GT
≤20mA)
is also available. (I
GT
item
1)
(dv/dt)
c
Symbol
R
8
400
L
10
V/µs
R
12
600
L
10
—
Min.
—
1. Junction temperature
T
j
=125°C
2. Rate of decay of on-state commutat-
ing current
(di/dt)
c
=–4.0A/ms
3. Peak off-state voltage
V
D
=400V
Unit
Test conditions
Voltage
class
V
DRM
(V)
Commutating voltage and current waveforms
(inductive load)
SUPPLY
VOLTAGE
MAIN CURRENT
MAIN
VOLTAGE
(dv/dt)c
(di/dt)c
TIME
TIME
TIME
V
D
PERFORMANCE CURVES
MAXIMUM ON-STATE CHARACTERISTICS
SURGE ON-STATE CURRENT (A)
RATED SURGE ON-STATE CURRENT
100
90
80
70
60
50
40
30
20
10
0
10
0
2 3 4 5 7 10
1
2 3 4 5 7 10
2
ON-STATE CURRENT (A)
10
2
7
5
3
2
10
1
7
5
3
2
10
0
7
5
3
2
T
j
= 125°C
T
j
= 25°C
10
–1
0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8
ON-STATE VOLTAGE (V)
CONDUCTION TIME
(CYCLES AT 60Hz)
Feb.1999
MITSUBISHI SEMICONDUCTOR
〈TRIAC〉
BCR8PM
MEDIUM POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
GATE CHARACTERISTICS
100 (%)
GATE TRIGGER CURRENT VS.
JUNCTION TEMPERATURE
10
3
7
5
4
3
2
TYPICAL EXAMPLE
3
2 V
GM
= 10V
GATE VOLTAGE (V)
P
G(AV)
= 0.5W
P
GM
= 5W
GATE TRIGGER CURRENT (T
j
= t°C)
GATE TRIGGER CURRENT (T
j
= 25°C)
10
1
7
5
3
2
10
0
7
5
3
2
I
GM
= 2A
V
GT
= 1.5V
I
RGT III
I
FGT I
I
RGT I,
I
RGT III
V
GD
= 0.2V
10
–1
7
5
10
1
2 3 5 7 10
2
2 3 5 7 10
3
2 3 5 7 10
4
GATE CURRENT (mA)
10
2
I
RGT I
I
FGT I
7
5
4
3
2
10
1
–60 –40 –20 0 20 40 60 80 100 120 140
JUNCTION TEMPERATURE (°C)
MAXIMUM TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(JUNCTION TO CASE)
GATE TRIGGER VOLTAGE VS.
JUNCTION TEMPERATURE
100 (%)
GATE TRIGGER VOLTAGE (T
j
= t°C)
GATE TRIGGER VOLTAGE (T
j
= 25°C)
10
3
7
5
4
3
2
10
2
7
5
4
3
2
TYPICAL EXAMPLE
TRANSIENT THERMAL IMPEDANCE (°C/W)
10
2
2 3 5 7 10
3
2 3 5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
10
–1
2 3 5 7 10
0
2 3 5 7 10
1
2 3 5 7 10
2
CONDUCTION TIME
(CYCLES AT 60Hz)
10
1
–60 –40 –20 0 20 40 60 80 100 120 140
JUNCTION TEMPERATURE (°C)
MAXIMUM TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(JUNCTION TO AMBIENT)
TRANSIENT THERMAL IMPEDANCE (°C/W)
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
MAXIMUM ON-STATE POWER
DISSIPATION
ON-STATE POWER DISSIPATION (W)
10
3
NO FINS
16
14
12 360°
CONDUCTION
10 RESISTIVE,
INDUCTIVE
8 LOADS
6
4
2
0
0
2
4
6
8
10
12
14
16
10
2
10
1
10
0
10
–1
10
1
2 3 5 7
10
2
2 3 5 7
10
3
2 3 5 7
10
4
2 3 5 7
10
5
CONDUCTION TIME
(CYCLES AT 60Hz)
RMS ON-STATE CURRENT (A)
Feb.1999
MITSUBISHI SEMICONDUCTOR
〈TRIAC〉
BCR8PM
MEDIUM POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
ALLOWABLE CASE TEMPERATURE
VS. RMS ON-STATE CURRENT
160
CASE TEMPERATURE (°C)
140
120
100
80
60
360°
40 CONDUCTION
RESISTIVE,
20 INDUCTIVE
LOADS
0
0
2
4
6
AMBIENT TEMPERATURE (°C)
CURVES APPLY REGARDLESS
OF CONDUCTION ANGLE
ALLOWABLE AMBIENT TEMPERATURE
VS. RMS ON-STATE CURRENT
160
ALL FINS ARE BLACK PAINTED
ALUMINUM AND GREASED
140
120
100
80
60
40
RESISTIVE,
20 INDUCTIVE
LOADS
0
0
2
4
6
120 120 t2.3
100 100 t2.3
60 60 t2.3
NATURAL
CONVECTION
CURVES APPLY
REGARDLESS
OF CONDUCTION
ANGLE
8 10 12 14 16
8
10
12
14
16
RMS ON-STATE CURRENT (A)
RMS ON-STATE CURRENT (A)
REPETITIVE PEAK OFF-STATE CURRENT (T
j
= t°C)
REPETITIVE PEAK OFF-STATE CURRENT (T
j
= 25°C)
AMBIENT TEMPERATURE (°C)
ALLOWABLE AMBIENT TEMPERATURE
VS. RMS ON-STATE CURRENT
160
NATURAL CONVECTION
NO FINS
140
CURVES APPLY REGARDLESS
OF CONDUCTION ANGLE
120
RESISTIVE, INDUCTIVE LOADS
100
80
60
40
20
0
0
0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2
RMS ON-STATE CURRENT (A)
100 (%)
REPETITIVE PEAK OFF-STATE
CURRENT VS. JUNCTION
TEMPERATURE
10
5
7 TYPICAL EXAMPLE
5
3
2
10
4
7
5
3
2
10
3
7
5
3
2
10
2
–60 –40 –20 0 20 40 60 80 100 120 140
JUNCTION TEMPERATURE (°C)
HOLDING CURRENT VS.
JUNCTION TEMPERATURE
10
3
7
5
4
3
2
10
2
7
5
4
3
2
10
1
–60 –40 –20 0 20 40 60 80 100 120 140
JUNCTION TEMPERATURE (°C)
TYPICAL EXAMPLE
LACHING CURRENT (mA)
10
3
7
5
3
2
10
2
7
5
3
2
10
1
7
5
3
2
100 (%)
LACHING CURRENT VS.
JUNCTION TEMPERATURE
HOLDING CURRENT (T
j
= t°C)
HOLDING CURRENT (T
j
= 25°C)
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
DISTRIBUTION
+
T
2
, G
+
TYPICAL
½
–
T
2
, G
–
EXAMPLE
+
T
2
, G
–
TYPICAL
EXAMPLE
10
0
–40
0
40
80
120
160
JUNCTION TEMPERATURE (°C)
Feb.1999
MITSUBISHI SEMICONDUCTOR
〈TRIAC〉
BCR8PM
MEDIUM POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
100 (%)
BREAKOVER VOLTAGE VS.
JUNCTION TEMPERATURE
100 (%)
160
TYPICAL EXAMPLE
140
BREAKOVER VOLTAGE VS.
RATE OF RISE OF
OFF-STATE VOLTAGE
160
140
TYPICAL EXAMPLE
T
j
= 125°C
BREAKOVER VOLTAGE (dv/dt = xV/µs )
BREAKOVER VOLTAGE (dv/dt = 1V/µs )
BREAKOVER VOLTAGE (T
j
= t°C)
BREAKOVER VOLTAGE (T
j
= 25°C)
120
100
80
60
40
20
0
–60 –40 –20 0 20 40 60 80 100120 140
JUNCTION TEMPERATURE (°C)
120
100
80
60
40
20
I QUADRANT
III QUADRANT
0
10
1
2 3 5 7 10
2
2 3 5 7 10
3
2 3 5 7 10
4
RATE OF RISE OF OFF-STATE VOLTAGE (V/µs)
CRITICAL RATE OF RISE OF OFF-STATE
COMMUTATING VOLTAGE (V/µs)
COMMUTATION CHARACTERISTICS
3 TYPICAL
2 EXAMPLE
10
2
T
j
= 125°C
7 I
T
= 4A
5
τ
= 500µs
3 V
D
= 200V
2 f = 3Hz
VOLTAGE WAVEFORM
GATE TRIGGER CURRENT VS.
GATE CURRENT PULSE WIDTH
10
3
7
5
4
3
2
10
2
7
5
4
3
2
10
1 0
10
2 3 4 5 7 10
1
2 3 4 5 7 10
2
100 (%)
TYPICAL EXAMPLE
I
FGT I
I
RGT I
I
RGT III
t
(dv/dt)
C
V
D
CURRENT WAVEFORM
(di/dt)
C
I
T
τ
t
10
1
7
I QUADRANT
5
3 MINIMUM
2 CHARAC-
10
0
TERISTICS III QUADRANT
7 VALUE
5
10
0
2 3 5 7 10
1
2 3 5 7 10
2
2 3 5 7 10
3
RATE OF DECAY OF ON-STATE
COMMUTATING CURRENT (A /ms)
GATE TRIGGER CURRENT (tw)
GATE TRIGGER CURRENT (DC)
GATE CURRENT PULSE WIDTH (µs)
GATE TRIGGER CHARACTERISTICS TEST CIRCUITS
6Ω
6Ω
6V
V
A
R
G
6V
V
A
R
G
TEST PROCEDURE
1
6Ω
TEST PROCEDURE
2
6V
V
A
R
G
TEST PROCEDURE
3
Feb.1999
