SMD Type
PNP General Purpose Transistors
BCW67,BCW68
SOT-23
+0.1
2.9
-0.1
+0.1
0.4
-0.1
Transistors
IC
Unit: mm
Features
+0.1
2.4
-0.1
For general AF applications.
High current gain.
Low collector-emitter saturation voltage.
+0.1
1.3
-0.1
1
+0.1
0.95
-0.1
+0.1
1.9
-0.1
2
0.55
0.4
3
+0.05
0.1
-0.01
0.97
+0.1
0.38
-0.1
+0.1
-0.1
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Peak collector current
Base current
Peak base current
Total power dissipation,T
S
= 79
Junction temperature
Storage temperature
Junction - soldering point
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
P
tot
T
j
T
stg
R
thJS
BCW67
-45
-32
-5
-800
-1000
-100
-200
330
150
-65 to +150
215
K/W
BCW68
-60
-45
-5
Unit
V
V
V
mA
mA
mA
mA
mW
0-0.1
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1
SMD Type
BCW67,BCW68
Electrical Characteristics Ta = 25
Parameter
Collector-emitter breakdown voltage
BCW67
BCW68
Collector-base breakdown voltage
Emitter-base breakdown voltage
BCW67
Collector cutoff current
BCW68
BCW67
BCW68
Emitter cutoff current
A/F
DC current gain *
hFE-group B/G
C/H
A/F
DC current gain *
hFE-group B/G
C/H
A/F
DC current gain *
hFE-group B/G
C/H
Collector-emitter saturation voltage *
V
CE(sat)
I
C
= -100 mA, I
B
= -10 mA
I
C
= -500 mA, I
B
= -50 mA
Base-emitter saturation voltage
Transition frequency
Collector-base capacitance
Emitter-base capacitance
* Pulse test: t
300ìs, D = 2%.
*
V
BE(sat)
f
T
Ccb
Ceb
I
C
= -100 mA, I
B
= -10 mA
I
C
= -500 mA, I
B
= -50 mA
I
C
= -50 mA, V
CE
= -5 V, f = 20 MHz
V
CB
= -10 V, f = 1 MHz
V
EB
= -0.5 V, f = 1 MHz
h
FE
I
C
= -100 mA, V
CE
= -1 V
h
FE
I
C
= 10 mA, V
CE
= 1 V
h
FE
I
C
= 100 ìA, V
CE
= 10 V
I
EBO
I
CBO
BCW67
BCW68
V
(BR)EBO
I
E
= -10ìA, I
C
= 0
I
CBO
V
CB
= -32 V, I
E
= 0
V
CB
= -45 V, I
E
= 0
V
CB
= -32 V, I
E
= 0 , T
A
= 150
V
CB
= -45 V, I
E
= 0 , T
A
= 150
V
EB
= -4 V, I
C
= 0
35
50
80
75
120
180
100
160
250
V
(BR)CBO
I
C
= -10 ìA, I
E
= 0
Symbol
Testconditons
Min
-32
-45
-45
-60
-5
Transistors
IC
Typ
Max
Unit
V
V
(BR)CEO
I
C
= -10 mA, I
B
= 0
V
V
-20
-20
-20
-20
-20
nA
ìA
nA
160
250
350
250
400
630
-0.3
-0.7
-1.25
-2
V
200
6
60
MHz
pF
h
FE
Classification
TYPE
Rank
Marking
TYPE
Rank
Marking
F
DFs
A
DAs
BCW67
B
DBs
BCW68
G
DGs
H
DHs
C
DCs
2
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