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BCX38B

Darlington Transistors

器件类别:半导体    分立半导体   

厂商名称:Diodes

厂商官网:http://www.diodes.com/

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器件:BCX38B

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器件参数
参数名称
属性值
产品种类
Product Category
Darlington Transistors
制造商
Manufacturer
Diodes
RoHS
No
Configuration
Single
Transistor Polarity
NPN
Collector- Emitter Voltage VCEO Max
60 V
Emitter- Base Voltage VEBO
10 V
Collector- Base Voltage VCBO
80 V
Maximum DC Collector Current
0.8 A
Maximum Collector Cut-off Current
0.1 uA
安装风格
Mounting Style
Through Hole
封装 / 箱体
Package / Case
TO-92
最大工作温度
Maximum Operating Temperature
+ 150 C
DC Current Gain hFE Max
2000
高度
Height
4.83 mm
长度
Length
4.78 mm
最小工作温度
Minimum Operating Temperature
- 55 C
宽度
Width
3.66 mm
单位重量
Unit Weight
0.016000 oz
文档预览
NPN SILICON PLANAR MEDIUM
POWER DARLINGTON TRANSISTORS
ISSUE 1 – MARCH 94
FEATURES
* 60 Volt V
CEO
* Gain of 10K at I
C
=0.5 Amp
* P
tot
=1 Watt
BCX38A/B/C
C
B
E
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
tot
T
j
:T
stg
80
60
10
2
E-Line
TO92 Compatible
VALUE
UNIT
V
V
V
A
mA
W
°C
800
1
-55 to +200
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C).
PARAMETER
Collector-Base
Breakdown Voltage
Collector-Emitter
Sustaining Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
Emitter Cut-Off
Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Turn-on Voltage
Static
Forward
Current
Transfer
Ratio
BCX38A
BCX38B
BCX38C
SYMBOL
V
(BR)CBO
V
CEO(sus)
V
(BR)EBO
I
CBO
I
EBO
V
CE(sat)
V
BE(on)
h
FE
500
1000
2000
4000
5000
10000
3-20
MIN.
80
60
10
100
100
1.25
1.8
TYP.
MAX.
V
V
V
nA
nA
V
V
UNIT CONDITIONS.
I
C
=10
µ
A, I
E
=0
I
C
=10mA, I
B
=0
I
E
=10
µ
A, I
C
=0
V
CB
=60V, I
E
=0
V
EB
=8V, I
C
=0
I
C
=800mA, I
B
=8mA*
I
C
=800mA, V
CE
=5V*
I
C
=100mA, V
CE
=5V*
I
C
=500mA, V
CE
=5V*
I
C
=100mA, V
CE
=5V*
I
C
=500mA, V
CE
=5V*
I
C
=100mA, V
CE
=5V*
I
C
=500mA, V
CE
=5V*
BCX38A/B/C
TYPICAL CHARACTERISTICS
I
C
/I
B
=100
1.0
1.6
-55°C
+25°C
0.6
+100°C
0.4
+175°C
+100°C
V
CE
=5V
0.8
h
FE
- Normalised Gain
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0.001
0.01
0.1
1
10
-55°C
+25°C
V
CE(sat)
- (Volts)
0.2
0.001
0.01
0.1
1
10
I
C
-
Collector Current (Amps)
I
C
-
Collector Current (Amps)
V
CE(sat)
v I
C
h
FE
v I
C
I
C
/I
B
=100
2.0
2.0
V
CE
=5V
V
BE(sat)
- (Volts)
V
BE
- (Volts)
-55°C
1.5
+25°C
1.0
+100°C
+175°C
0.5
0.001
0.01
0.1
1
10
-55°C
1.5
+25°C
1.0
+100°C
+175°C
0.01
0.1
1
10
0.5
0.001
I
C
-
Collector Current (Amps)
I
C
-
Collector Current (Amps)
V
BE(sat)
v I
C
10
V
BE(on)
v I
C
Single Pulse Test at T
amb
=25°C
D=1 (D.C.)
Thermal Resistance (°C/W)
I
C
- Collector Current (Amps)
150
100
D=0.5
1
50
D=0.2
D=0.1
D=0.05
Single Pulse
0.1
0
0.0001
D.C.
1s
100ms
10ms
1.0ms
0.1ms
0.001
0.01
0.1
1
10
100
0.01
1
10
100
1000
Pulse Width (seconds)
Maximum transient thermal impedance
V
CE
-
Collector Voltage (Volts)
Safe Operating Area
3-21
BCX38A/B/C
The maximum permissable operational
temperature can be obtained using the
equation:
1.0
0.8
R
S
≤10kΩ
R
S
=47kΩ
R
S
=1MΩ
0.6
R
S
=
Maximum Power Dissipation - (W)
T
amb
(
max
)
=
Power
(max ) −Power (actual )
+
25°
C
0.0057
T
amb(max)
= Maximum operating ambient
temperature
Power (max) = Maximum power
dissipation figure, for a given V
CE
and
source resistance (R
S
)
0.4
0.2
1
10
100
Power (actual) = Actual power dissipation
in users circuit
V
CE
- Collector-Emitter Voltage - (V)
3-22
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