Elektronische Bauelemente
PNP Transistors
Plastic-Encapsulate Transistors
RoHS Compliant Product
BCX51
1
2
3
4.4~4.6
1.4~1.8
SOT-89
1.BASE
2.COLLECTOR
1.4~1.6
Features
Power dissipation
P
CM:
Collector current
I
CM:
Collector-base voltage
V
(BR)CBO
:
0.5
-1
-45
3.EMITTER
3.94~4.25
W (Tamb=25 C)
A
V
o
0.36~0.56
0.9~1.1
1.5Ref.
2.9~3.1
0.32~0.52
2.3~2.6
0.35~0.44
Dimensision in Millimeter
Operating and storage junction temperature range
T
J
, T
stg
: -55
o
C to +150 C
ELECTRICAL CHARACTERISTICS (Tamb=25
o
C
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
o
unless
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
otherwise
Test
specified)
MIN
-45
-45
-5
-0.1
-0.1
MAX
UNIT
V
V
V
µA
µA
conditions
Ic=-100µA, I
E
=0
I
C
= -1mA , I
B
=0
I
E
=-10µA, I
C
=0
V
CB
=-30V, I
E
=0
V
EB
=-5V, I
C
=0
DC current gain
BCX51
BCX51-10
BCX51-16
h
FE(1)
V
CE
=-2V, I
C
=-150mA
63
63
100
63
40
250
160
250
h
FE(2)
h
FE(3)
Collector-emitter saturation voltage
Base-emitter
voltage
V
CE(sat)
V
BE(ON)
V
CE
=-2V, I
C
=- 5mA
V
CE
=-2V, I
C
=- 500mA
I
C
=-500 mA, I
B
= -50mA
I
C
= -500 mA, V
CE
=-2V
V
CE
= -5V, I
C
=-10mA
-0.5
-1
V
V
Transition frequency
f
T
f =
100MHz
50
MHz
DEVICE MARKING
BCX51=AA
BCX51-10=AC
BCX51-16=AD
http://www.SeCoSGmbH.com
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 1 of
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