SOT89 NPN SILICON PLANAR
MEDIUM POWER TRANSISTORS
ISSUE 3 – FEBRUARY 1996
PARTMARKING DETAILS:-
BCX54 – BA
BCX54-10 – BC
BCX55 – BE
BCX55-10 – BG
BCX56 – BH
BCX56-10 – BK
C
BCX54-16 – BD
BCX55-16 – BM
BCX56-16 – BL
E
C
BCX56 – BCX53
B
COMPLEMENTARY TYPES:-
BCX54 – BCX51
BCX55 – BCX52
7
BCX54
BCX55
BCX56
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at T
amb
=25°C
I
CM
I
C
P
tot
V
EBO
V
CEO
V
CBO
SYMBOL
BCX54
45
45
BCX55
60
60
5
2
1
1
-65 to +150
BCX56
100
80
UNIT
V
V
V
A
A
W
°C
Operating and Storage Temperature Range T
j
:T
stg
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
Collector-Base Breakdown
Voltage
Collector-Emitter
Breakdown Voltage
SYMBOL
V
(BR)CBO
MIN. TYP. MAX. UNIT CONDITIONS.
BCX54
BCX55
BCX56
BCX54
BCX55
BCX56
45
60
100
V
(BR)CEO
45
60
80
V
(BR)EBO
I
CBO
5
0.1
20
V
I
C
=100µA
V
V
µA
µA
I
C
=10mA*
I
E
=10µA
V
CB
=30V
V
CB
=30V, T
amb
=150°C
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
I
EBO
Collector-Emitter Saturation Voltage V
CE(sat)
Base-Emitter Turn-On Voltage
Static Forward Current Transfer
Ratio
V
BE(on)
h
FE
–10
–16
Transition Frequency
Output Capacitance
f
T
C
obo
25
40
25
63
100
150
20
0.5
1.0
250
160
250
nA
V
V
V
EB
=4V
I
C
=500mA, I
B
=50mA*
I
C
=500mA, V
CE
=2V*
I
C
=5mA, V
CE
=2V*
I
C
=150mA, V
CE
=2V*
I
C
=500mA, V
CE
=2V*
I
C
=150mA, V
CE
=2V*
I
C
=150mA, V
CE
=2V*
MHz I
C
=50mA, V
CE
=10V,
f=100MHz
15
pF
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle
≤2%
V
CB
=10V, f=1MHz
3 - 35
