SMD Type
PNP Silicon AF Transistors
BCX69
SOT-89
+0.1
4.50
-0.1
Transistors
Unit: mm
+0.1
1.50
-0.1
1.80
+0.1
-0.1
Features
+0.1
2.50
-0.1
+0.1
0.48
-0.1
+0.1
0.53
-0.1
For general AF applications.
High collector current.
+0.1
4.00
-0.1
+0.1
2.60
-0.1
Low collector-emitter saturation voltage.
+0.1
0.80
-0.1
High current gain.
+0.1
0.44
-0.1
+0.1
3.00
-0.1
+0.1
0.40
-0.1
1. Base
2. Collector
3. Emiitter
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Peak collector current
Base current
Peak base current
Total power dissipation
Junction temperature
Storage temperature
Junction - soldering point
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
P
tot
T
j
T
stg
R
thJS
Rating
20
25
5
1
2
100
200
1
150
-65 to +150
20
K/W
Unit
V
V
V
A
A
mA
mA
W
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1
SMD Type
BCX69
Electrical Characteristics Ta = 25
Parameter
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
DC current gain *
BCX69
DC current gain *
BCX69-10
BCX69-16
BCX69-25
DC current gain *
Collector-emitter saturation voltage *
Base-emitter voltage
*
h
FE
V
CE(sat)
V
BE(ON)
I
C
= 1A, V
CE
= 1V
I
C
= 1 A, I
B
= 100 mA
I
C
= 5 mA, V
CE
= 10 V
I
C
= 1 A, V
CE
= 1 V
Transition frequency
* Pulse test: t
300ìs, D = 2%.
f
T
I
C
= 100 mA, V
CE
= 5 V, f = 20 MHz
h
FE
I
C
= 500 mA, V
CE
= 1 V
Symbol
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
h
FE
Testconditons
I
C
= 30 mA, I
B
= 0
I
C
= 10 ìA, I
B
= 0
I
E
= 1 ìA, I
C
= 0
V
CB
= 25 V, I
E
= 0
V
CB
= 25 V, I
E
= 0 , T
A
= 150
I
C
= 5 mA, V
CE
= 10 V
50
85
85
Transistors
Min
20
25
5
Typ
Max
Unit
V
V
V
100
100
nA
ìA
375
100
160
250
160
250
375
100
160
60
0.5
0.6
1
100
MHz
V
h
FE
Classification
TYPE
Marking
BCX69
CE
BCX69-10
CF
BCX69-16
CG
BCX69-25
CH
2
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