SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
BD534/536/538
DESCRIPTION
·With TO-220C package
·Complement to type BD533/535/537
·Low saturation voltage
APPLICATIONS
·For medium power linear and
switching applications
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
BD534
V
CBO
Collector-base voltage
BD536
BD538
BD534
V
CEO
Collector-emitter voltage
BD536
BD538
V
EBO
I
C
I
E
I
B
P
C
T
j
T
stg
Emitter-base voltage
Collector current
Emitter current
Base current
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25
Open collector
Open base
Open emitter-
CONDITIONS
VALUE
-45
-60
-80
-45
-60
-80
-5
-8
-8
-1
50
150
-65~150
V
A
A
A
W
V
V
UNIT
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
BD534/536/538
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Base-emitter on voltage
BD534
I
CBO
Collector cut-off current
BD536
BD538
BD534
I
CES
Collector cut-off current
BD536
BD538
I
EBO
Emitter cut-off current
BD534/536
h
FE-1
DC current gain
BD538
h
FE-2
DC current gain
DC current gain
(All device)
Group: J
I
C
=-2A ; V
CE
=-2V
Group: K
Group: J
I
C
=-3A ; V
CE
=-2V
Group: K
I
C
=-0.5A ; V
CE
=-1V
20
3
12
MHz
40
15
100
I
C
=-0.5A ; V
CE
=-2V
I
C
=-10mA ; V
CE
=-5V
15
40
30
75
CONDITIONS
I
C
=-2 A;I
B
=-0.2 A
I
C
=-6 A;I
B
=-0.6 A
I
C
=-2A ; V
CE
=-2V
V
CB
=-45V; I
E
=0
V
CB
=-60V; I
E
=0
V
CB
=-80V; I
E
=0
V
CE
=-45V; V
BE
=0
V
CE
=-60V; V
BE
=0
V
CE
=-80V; V
BE
=0
V
EB
=5V; I
C
=0
20
-1
mA
-0.1
mA
-0.1
mA
-0.8
-1.5
MIN
TYP.
MAX
-0.8
UNIT
V
V
V
SYMBOL
V
CEsat-1
V
CEsat-2
V
BE
h
FE-3
h
FE-4
DC current gain
(All device)
Transition frequency
f
T
2
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
BD534/536/538
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
3
