SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
BD533/535/537
DESCRIPTION
·With TO-220C package
·Complement to type BD534/536/538
·Low saturation voltage
APPLICATIONS
·For medium power linear and
switching applications
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
DESCRIPTION
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
BD533
V
CBO
Collector-base voltage
BD535
BD537
BD533
V
CEO
Collector-emitter voltage
BD535
BD537
V
EBO
I
C
I
E
I
B
P
C
T
j
T
stg
Emitter-base voltage
Collector current
Emitter current
Base current
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25
Open collector
Open base
Open emitter
CONDITIONS
VALUE
45
60
80
45
60
80
5
8
8
1
50
150
-65~150
V
A
A
A
W
V
V
UNIT
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
BD533/535/537
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Base-emitter on voltage
BD533
I
CBO
Collector cut-off current
BD535
BD537
BD533
I
CES
Collector cut-off current
BD535
BD537
I
EBO
Emitter cut-off current
BD533/535
h
FE-1
DC current gain
BD537
h
FE-2
DC current gain
DC current gain
(All device)
Group: J
I
C
=2A ; V
CE
=2V
Group: K
Group: J
I
C
=3A ; V
CE
=2V
Group: K
I
C
=0.5A ; V
CE
=1V
20
3
12
MHz
40
15
100
I
C
=0.5A ; V
CE
=2V
I
C
=10mA ; V
CE
=5V
15
40
30
75
CONDITIONS
I
C
=2 A;I
B
=0.2 A
I
C
=6 A;I
B
=0.6 A
I
C
=2A ; V
CE
=2V
V
CB
=45V; I
E
=0
V
CB
=60V; I
E
=0
V
CB
=80V; I
E
=0
V
CE
=45V; V
BE
=0
V
CE
=60V; V
BE
=0
V
CE
=80V; V
BE
=0
V
EB
=5V; I
C
=0
20
1
mA
0.1
mA
0.1
mA
0.8
1.5
MIN
TYP.
MAX
0.8
UNIT
V
V
V
SYMBOL
V
CEsat-1
V
CEsat-2
V
BE
h
FE-3
h
FE-4
DC current gain
(All device)
Transition frequency
f
T
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
BD533/535/537
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
3
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