SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
DESCRIPTION
·With TO-220C package
·Complement to type BD743/A/B/C
·High current capability
·High power dissipation
APPLICATIONS
·For use in power linear and
switching applications
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
BD744/A/B/C
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
BD744
V
CBO
Collector-base voltage
BD744A
BD744B
BD744C
BD744
V
CEO
Collector-emitter voltage
BD744A
BD744B
BD744C
V
EBO
I
C
I
CM
I
B
P
C
T
j
T
stg
Emitter-base voltage
Collector current
Collector current-peak
Base current
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25
T
a
=25
Open collector
Open base
Open emitter
CONDITIONS
VALUE
-50
-70
-90
-110
-45
-60
-80
-100
-5
-15
-20
-5
90
2
150
-65~150
V
A
A
A
W
V
V
UNIT
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
BD744
Collector-emitter
breakdown voltage
BD744A
I
C
=-30mA; I
B
=0
BD744B
BD744C
V
CEsat-1
V
CEsat-2
V
BE -1
V
BE -2
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Base-emitter on voltage
Base-emitter on voltage
BD744/A
I
CEO
Collector cut-off current
BD744B/C
BD744
BD744A
I
CBO
Collector cut-off current
BD744B
BD744C
I
EBO
h
FE-1
h
FE-2
h
FE-3
Emitter cut-off current
DC current gain
DC current gain
DC current gain
V
CE
=-60V; I
B
=0
V
CE
=-50V; V
BE
=0
T
C
=125
V
CE
=-70V; V
BE
=0
T
C
=125
V
CE
=-90V; V
BE
=0
T
C
=125
V
CE
=-110V; V
BE
=0
T
C
=125
V
EB
=-5V; I
C
=0
I
C
=-1A ; V
CE
=-4V
I
C
=-5A ; V
CE
=-4V
I
C
=-15A ; V
CE
=-4V
40
20
5
I
C
=-5 A;I
B
=-0.5 A
I
C
=-15 A;I
B
=-5 A
I
C
=-5A ; V
CE
=-4V
I
C
=-15A ; V
CE
=-4V
V
CE
=-30V; I
B
=0
-80
-100
CONDITIONS
MIN
-45
-60
SYMBOL
BD744/A/B/C
TYP.
MAX
UNIT
V
(BR)CEO
V
-1.0
-3.0
-1.0
-3.0
V
V
V
V
-0.1
-0.1
-5.0
-0.1
-5.0
-0.1
-5.0
-0.1
-5.0
-0.5
mA
mA
mA
150
Switching times resistive load
t
d
t
r
t
s
t
f
Delay time
Rise time
Storage time
Fall time
I
C
=-5 A;I
B1
=-I
B2
=-0.5 A
V
BE(off)
=4.2V; R
L
=6@
t
p
=20µs
0.02
0.12
0.6
0.3
µs
µs
µs
µs
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance junction to case
2
MAX
1.40
UNIT
/W
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
BD744/A/B/C
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
3
