首页 > 器件类别 > 半导体 > 分立半导体

BDX33D

10 A, 120 V, NPN, Si, POWER TRANSISTOR, TO-220

器件类别:半导体    分立半导体   

厂商名称:CDIL

厂商官网:http://www.cdilsemi.com

下载文档
BDX33D 在线购买

供应商:

器件:BDX33D

价格:-

最低购买:-

库存:点击查看

点击购买

文档预览
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN/PNP PLASTIC POWER TRANSISTORS
BDX33, 33A, 33B, 33C, 33D
BDX34, 34A, 34B, 34C, 34D
TO-220
Plastic Package
Power Darlington for Linear Switchilng Application
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
SYMBOL
Collector -Emitter Voltage
Collector -Base Voltage
Emitter -Base Voltage
Collector Current -
Continuous
Peak
Base Current
Device Dissipation
@ Tc=25ºC
Derate Above 25ºC
Operating And Storage
Junction
Temperature Range
THERMAL RESISTANCE
Junction to Case
V
CEO
V
CBO
V
EBO
I
C
I
CM
I
B
P
D
BDX33
BDX34
45
45
BDX33A BDX33B BDX33C BDX33D
BDX34A BDX34B BDX34C BDX34D
60
80
100
120
60
80
100
120
5.0
10
15
0.25
70
0.56
-65 to +150
UNIT
V
V
V
A
A
A
W
W/ºC
ºC
T
j
, T
stg
R
th(j-c)
1.78
ºC/W
ELECTRICAL CHARACTERISTICS (Tc=25ºC Unless Otherwise Specified)
DESCRIPTION
SYMBOL
TEST
BDX33 BDX33A BDX33B BDX33C BDX33D
CONDITION
BDX34 BDX34A BDX34B BDX34C BDX34D
Breakdown (sus) Voltage
V
CEO(sus)
*
V
CER(sus)
*
V
CEX(sus)
*
Collector-Cut off Current
I
CEO
I
C
=100mA, I
B
=0
I
C
=100mA,
R
BE
=100 W
I
C
=100mA,
V
BE
=1.5V
V
CE
=1/2rated
V
CEO
, I
B
=0
Tc=100ºC
V
CE
=1/2rated
V
CEO
, I
B
=0
I
CBO
I
E
=0,V
CB
=Rated
V
CBO
,
Tc=100ºC
I
E
=0,V
CB
=Rated
V
CBO
,
>45
>60
>80
>100
>120
UNIT
V
>45
>45
<0.5
>60
>60
<0.5
>80
>80
<0.5
>100
>100
<0.5
>120
>120
<0.5
V
V
mA
<10
<10
<10
<10
<10
mA
<1
<1
<1
<1
<1
mA
<5
<5
<5
<5
<5
mA
Continental Device India Limited
Data Sheet
Page 1 of 4
NPN/PNP PLASTIC POWER TRANSISTORS
BDX33, 33A, 33B, 33C, 33D
BDX34, 34A, 34B, 34C, 34D
TO-220
Plastic Package
ELECTRICAL CHARACTERISTICS (Tc=25ºC Unless Otherwise Specified)
DESCRIPTION
SYMBOL
TEST
BDX33 BDX33A BDX33B BDX33C BDX33D
CONDITION
BDX34 BDX34A BDX34B BDX34C BDX34D
V
EB
=5V, I
C
=O
I
EBO
<10
<10
<10
<10
<10
Emitter-Cut off Current
V
CE(Sat)
* I
C
=4A, I
B
=8mA
<2.5
<2.5
Collector Emitter
I
C
=3A, I
B
=6mA
<2.5
<2.5
<2.5
Saturation Voltage
I
C
=4A, V
CE
=3V,
V
BE(on)
*
<2.5V
<2.5
Base Emitter on Voltage
I
C
=3A, V
CE
=3V
<2.5
<2.5
<2.5
h
FE
*
I
C
=4A, V
CE
=3V
DC Current Gain
>750
>750
-
-
-
I
C
=3A, V
CE
=3V
>750
>750
>750
I
C
=8A
ALL
V
F
<4
Diode Forward Voltage
SECOND BREAKDOWN
Secondbreakdown
Collector Current
V
CE
=25V,
I
S/b
**
With Base Forward
Biased (non-repetitive)
BDX33 Series
>2.8
V
CE
=20V,
BDX34 Series
>3.5
V
CE
=36V,
BDX33 Series
>1.0
V
CE
=33V,
BDX34 Series
>1.0
ELECTRICAL CHARACTERISTICS (Tc=25ºC Unless Otherwise Specified)
DESCRIPTION
SYMBOL
TEST
CONDITION
DYNAMIC CHARACTERISTICS
I
c
=1A,V
CE
=5V,
| h
fe
|
Small- Signal
Current Gain
f=1MHz
Output Capacitance
C
ob
V
CB
=10V,I
E
=0,
f=1MHz
BDX33 series
BDX34 series
UNIT
mA
V
V
V
V
V
A
A
A
A
VALUE
min
max
UNIT
1000
200
300
pF
V
CE
=5V, I
C
=1A,
f=1MHz
ALL
*Pulse Test:- Pulse Width<300µs, Duty Cycle=<2%
**Pulse Test non- repetitive : Pulse Width=0.25s
Transition Frequency
f
T
3.0
MHZ
Continental Device India Limited
Data Sheet
Page 2 of 4
BDX33, 33A, 33B, 33C, 33D
BDX34, 34A, 34B, 34C, 34D
TO-220
Plastic Package
TO-220 Plastic Package
B
F
C
E
1
2
3
D
G
J
M
4
DIM
MIN
MAX
A
14.42
16.51
9.63 10.67
B
3.56
4.83
C
0.90
D
1.15
1.40
E
3.75
3.88
F
2.29
2.79
G
2.54
3.43
H
0.56
J
12.70 14.73
K
2.80
4.07
L
2.03
2.92
M
31.24
N
7 DEG
O
All diminsions in mm.
H
A
N
L
K
O
O
1
2
3
TO-220 Tube Packing
Label
536.00
±1.5
Pin Configuration
1. Base
2. Collector
3. Emitter
4. Collector
End Pin
13.74
DEVICE NAME
Sr.
QTY.
32.85
6.87
Tube Thickness
E
AM
EN
VIC
DE Sr.
.
Qty
All Dimensions in mm
50 Pcs./Tube
AMMO PACK SIZE
Label
92.0
Packing Detail
PACKAGE
TO-220 / FP
75.
0
STANDARD PACK
Details
Net Weight/Qty
200 pcs/polybag 396 gm/200 pcs
50 pcs/tube
120 gm/50 pcs
INNER CARTON BOX
Size
Qty
3" x 7.5" x 7.5"
1.0K
3.5" x 3.7" x 21.5"
1.0K
Data Sheet
Continental Device India Limited
AM
EN
VIC
DE Sr.
.
Qt y
E
0
8. 0
53
20 Tubes/Ammo Pack
1000 Pcs./Ammo Pack
OUTER CARTON BOX
Size
Qty
Gr Wt
17" x 15" x 13.5"
16.0K
36 kgs
19" x 19" x 19"
10.0K
29 kgs
Page 3 of 4
Notes
BDX33, 33A, 33B, 33C, 33D
BDX34, 34A, 34B, 34C, 34D
TO-220
Plastic Package
Disclaimer
The product information and the selection guides facilitate selection of the CDIL's Discrete Semiconductor Device(s) best suited
for application in your product(s) as per your requirement. It is recommended that you completely review our Data Sheet(s) so as
to confirm that the Device(s) meet functionality parameters for your application. The information furnished in the Data Sheet and
on the CDIL Web Site/CD is believed to be accurate and reliable. CDIL however, does not assume responsibility for inaccuracies
or incomplete information. Furthermore, CDIL does not assume liability whatsoever, arising out of the application or use of any
CDIL product; neither does it convey any license under its patent rights nor rights of others. These products are not designed for
use in life saving/support appliances or systems. CDIL customers selling these products (either as individual Discrete
Semiconductor Devices or incorporated in their end products), in any life saving/support appliances or systems or applications do
so at their own risk and CDIL will not be responsible for any damages resulting from such sale(s).
CDIL strives for continuous improvement and reserves the right to change the specifications of its products without prior notice.
CDIL is a registered Trademark of
Continental Device India Limited
C-120 Naraina Industrial Area, New Delhi 110 028, India.
Telephone + 91-11-579 6150 Fax + 91-11-579 9569, 579 5290
www.cdil.com
e-mail sales@cdil.com
BDX33_34Rev
Continental Device India Limited
Data Sheet
Page 4 of 4
查看更多>
参数对比
与BDX33D相近的元器件有:BDX33、BDX33B、BDX34A、BDX34D、BDX33A、BDX34、BDX34B、BDX34C。描述及对比如下:
型号 BDX33D BDX33 BDX33B BDX34A BDX34D BDX33A BDX34 BDX34B BDX34C
描述 10 A, 120 V, NPN, Si, POWER TRANSISTOR, TO-220 10 A, 45 V, NPN, Si, POWER TRANSISTOR, TO-220AB 10 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-220 10 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220 10 A, 120 V, PNP, Si, POWER TRANSISTOR, TO-220AB 10 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-220AB 10 A, 45 V, PNP, Si, POWER TRANSISTOR, TO-220 10 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-220AB 10 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-220
emc试验和诊断技术简化版
很有用 emc试验和诊断技术简化版 ...
yxp1016 PCB设计
VS.Net2005 开发的程序-WINCE4.0平台远程部署的奇怪现象--应用反思
本人开发了一个程序在WINCE上运行,无线扫描数据输入系统,WINCE 上 都有 无线网络。 开发部...
atao9527 WindowsCE
全志V853开发板硬件开发用户入门指南
本章节将介绍V853开发板上各模块的基础使用方法。 V853开发板集成了LED、WiFi、蓝牙、...
aleksib 国产芯片交流
实话实说电源设计
  最近,我遇见了一个老朋友,他是一位很有经验的模拟电路工程师,从事高可靠服务器用电源子系统的设计...
pushu009azx 电源技术
专利,在创新中诞生
本帖最后由 jameswangsynnex 于 2015-3-3 19:59 编辑 人们养殖的鱼...
lorant 移动便携
winCE 毕业设计 高手帮忙
用EVC4.0 编写的俄罗斯方块游戏程序,编译通过,如果用模拟器运行的话,会提示the intel...
goocoic WindowsCE
热门器件
热门资源推荐
器件捷径:
00 01 02 03 04 05 06 07 08 09 0A 0C 0F 0J 0L 0M 0R 0S 0T 0Z 10 11 12 13 14 15 16 17 18 19 1A 1B 1C 1D 1E 1F 1H 1K 1M 1N 1P 1S 1T 1V 1X 1Z 20 21 22 23 24 25 26 27 28 29 2A 2B 2C 2D 2E 2F 2G 2K 2M 2N 2P 2Q 2R 2S 2T 2W 2Z 30 31 32 33 34 35 36 37 38 39 3A 3B 3C 3D 3E 3F 3G 3H 3J 3K 3L 3M 3N 3P 3R 3S 3T 3V 40 41 42 43 44 45 46 47 48 49 4A 4B 4C 4D 4M 4N 4P 4S 4T 50 51 52 53 54 55 56 57 58 59 5A 5B 5C 5E 5G 5H 5K 5M 5N 5P 5S 5T 5V 60 61 62 63 64 65 66 67 68 69 6A 6C 6E 6F 6M 6N 6P 6R 6S 6T 70 71 72 73 74 75 76 77 78 79 7A 7B 7C 7M 7N 7P 7Q 7V 7W 7X 80 81 82 83 84 85 86 87 88 89 8A 8D 8E 8L 8N 8P 8S 8T 8W 8Y 8Z 90 91 92 93 94 95 96 97 98 99 9A 9B 9C 9D 9F 9G 9H 9L 9S 9T 9W
需要登录后才可以下载。
登录取消