INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
BDY26
DESCRIPTION
·Collector-Emitter
Breakdown Voltage-
: V
(BR)CEO
= 180V(Min.)
·Collector-Emitter
Saturation Voltage-
: V
CE(sat
)= 0.6V(Max)@ I
C
= 2A
·High
Switching Speed
APPLICATIONS
·Designed
for LF signal powe amplifier applications.
ABSOLUTE MAXIMUM RATINGS(T
a
=25℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
B
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Base Current
w
.cn
i
em
cs
.is
w
w
VALUE
300
UNIT
V
180
10
6
V
V
A
3
87.5
200
-65~200
A
W
℃
℃
P
C
T
J
T
stg
Collector Power Dissipation@T
C
=25℃
Junction Temperature
Storage Temperature
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal Resistance,Junction to Case
MAX
2.0
UNIT
℃/W
isc Website：www.iscsemi.cn
1
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistors
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
V
(BR)CEO
V
(BR)CBO
V
CE
(sat)
V
BE
(sat)
I
CES
I
CEO
I
EBO
h
FE
f
T
PARAMETER
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
CONDITIONS
I
C
= 50mA; I
B
= 0
I
C
= 3mA; I
E
= 0
I
C
= 2A; I
B
= 0.25A
B
BDY26
MIN
180
300
TYP.
MAX
UNIT
V
V
0.6
1.2
1.0
1.0
1.0
100
V
V
mA
mA
mA
I
C
= 2A; I
B
= 0.25A
B
V
CE
= 250V; V
BE
= 0
V
CE
= 180V; I
B
= 0
V
EB
= 10V; I
C
= 0
Current Gain-Bandwidth Product
Switching Times
t
on
t
off
Turn-On Time
Turn-Off Time
w
C
.cn
i
em
cs
.is
w
w
I
C
= 2A; V
CE
= 4V
15
I
C
= 0.5A; V
CE
= 15V; f=10MHz
10
I
C
= 5A; I
B
= 1A
B
MHz
0.5
2.0
μs
μs
I
C
= 5A; I
B1
= 1A; I
B2
= -0.5A
h
FE
Classifications
A
15-45
B
30-90
75-100
isc Website：www.iscsemi.cn
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